The a-Ge:H/a-SiNx:H multiquantiim-well structures were prepared by a computercon trolied plasma,enhanced clieinicaJ vapor deposition method and tAeii crystallized by At+laser annealing technique.When the Ge well-layer...The a-Ge:H/a-SiNx:H multiquantiim-well structures were prepared by a computercon trolied plasma,enhanced clieinicaJ vapor deposition method and tAeii crystallized by At+laser annealing technique.When the Ge well-layer thickness was reduced to 30 A,the crystallized sample showed a roojn temperature pLotoluininescence with a peak at about 2.26 eV.Mennwhile some significant characteristics of such a novel Ge na.nostructiire were also revealed by x-ray difEraction.Possible mechanisms of this visible PL phenomenon have been discussed.展开更多
Hydrogenated amorphous silicon carbide(a-Sic_(x):H)films were prepared by glow discharge technique with gas mixture of silane(SiH_(4))and methan(CH_(4)).The room-temperature optical bistability was demonstrated in unc...Hydrogenated amorphous silicon carbide(a-Sic_(x):H)films were prepared by glow discharge technique with gas mixture of silane(SiH_(4))and methan(CH_(4)).The room-temperature optical bistability was demonstrated in uncoated a-SiC_(x):H films at the excitation wavelength about 532nm.The switch-on intensity of device is about 0.8 MW/cm^(2) and the switching time is in the nanosecond scale.The physical origin of the optical nonlin5arity in these materials is also discussed.展开更多
文摘The a-Ge:H/a-SiNx:H multiquantiim-well structures were prepared by a computercon trolied plasma,enhanced clieinicaJ vapor deposition method and tAeii crystallized by At+laser annealing technique.When the Ge well-layer thickness was reduced to 30 A,the crystallized sample showed a roojn temperature pLotoluininescence with a peak at about 2.26 eV.Mennwhile some significant characteristics of such a novel Ge na.nostructiire were also revealed by x-ray difEraction.Possible mechanisms of this visible PL phenomenon have been discussed.
基金Supported by the National Natural Science Foundation of China.
文摘Hydrogenated amorphous silicon carbide(a-Sic_(x):H)films were prepared by glow discharge technique with gas mixture of silane(SiH_(4))and methan(CH_(4)).The room-temperature optical bistability was demonstrated in uncoated a-SiC_(x):H films at the excitation wavelength about 532nm.The switch-on intensity of device is about 0.8 MW/cm^(2) and the switching time is in the nanosecond scale.The physical origin of the optical nonlin5arity in these materials is also discussed.
