肺淋巴上皮瘤样癌是一种罕见的原发性肺癌,与Epstein-Barr病毒(Epstein-Barr virus,EBV)感染密切相关,好发于亚裔、年轻、不吸烟人群。肺癌常见的驱动基因在肺淋巴上皮瘤样癌中发生率低,程序性死亡受体配体1(programmed death ligand 1,...肺淋巴上皮瘤样癌是一种罕见的原发性肺癌,与Epstein-Barr病毒(Epstein-Barr virus,EBV)感染密切相关,好发于亚裔、年轻、不吸烟人群。肺癌常见的驱动基因在肺淋巴上皮瘤样癌中发生率低,程序性死亡受体配体1(programmed death ligand 1,PD-L1)表达多为阳性。肺淋巴上皮瘤样癌多采取以手术为主的综合治疗模式,含铂类的双药化疗是目前晚期肺淋巴上皮瘤样癌最常见的一线化疗方案,随着肿瘤的诊断与治疗进入精准时代,靶向治疗、免疫治疗可能成为肺淋巴上皮瘤样癌治疗新的突破口。文章综述了肺淋巴上皮瘤样癌最新的诊断与治疗进展,以期为临床医师及研究学者提供参考。展开更多
Zinc blende structure GaAs/AlGaAs core-multishell nanowires(NWs)are grown on a GaAs(111)B substrate by a two-temperature process using an Au-catalyzed vapor-liquid-solid mechanism and metal organic chemical vapor depo...Zinc blende structure GaAs/AlGaAs core-multishell nanowires(NWs)are grown on a GaAs(111)B substrate by a two-temperature process using an Au-catalyzed vapor-liquid-solid mechanism and metal organic chemical vapor deposition,respectively.Defect-free radial heterostructure NWs are formed.It can be concluded that the NWs are grown with the main contributions from the direct impingement of the precursors onto the alloy droplets and little from adatom diffusion.The results indicate that the droplet acts as a catalyst rather than an adatom collector.The photoluminescence spectra reveal that the grown NWs have much higher optical efficiency than bare GaAs NWs.展开更多
Designed is dispersion-flattened photonic crystal fiber（PCF） with small normal dispersion for generating flat wideband supercontinuum （SC）, and demonstrated is spectrally sliced pulse source which utilizes supereo...Designed is dispersion-flattened photonic crystal fiber（PCF） with small normal dispersion for generating flat wideband supercontinuum （SC）, and demonstrated is spectrally sliced pulse source which utilizes supereontinuum generated in dispersion-flattened photonic crystal fiber. The results show that the fiber characterized by flattened dispersion with small normal dispersion is suitable for flat wideband supercontinuum generation. In the process of spectral broadening, self-phase modulation plays a dominant role. By filtering the supercontinuum, multi-wavelength pulses can be obtained over a wide spectral range.展开更多
To explain different doping effects in a buffer layer,thermally annealed interface,and upper epilayers of GaAs/Si films grown by Metalorganic Chemical Vapor Deposition(MOCVD),the behaviors of unintentional doping in G...To explain different doping effects in a buffer layer,thermally annealed interface,and upper epilayers of GaAs/Si films grown by Metalorganic Chemical Vapor Deposition(MOCVD),the behaviors of unintentional doping in GaAs/Si films are investigated in detail.A third doping mechanism of arsine impurity incorporation during the growth process of GaAs/Si films,apart from conventional mechanisms of gas phase reaction and diffusion from the silicon substrate,is proposed.The experimental results reveal that the doping behavior in the buffer layer studied is determined by the three types of doping mechanisms together.However in the thermally annealed interface and upper epilayers,the third doping mechanism is dominant.According to the third mechanism,the background carrier concentration in GaAs/Si films grown by MOCVD could be properly controlled through the arsine flow rate.展开更多
The fabrication of self-catalyzed InP nanowires(NWs)is investigated under different growth conditions.Indium droplets induced by surface reconstruction act as nucleation sites for NW growth.Vertical standing NWs with ...The fabrication of self-catalyzed InP nanowires(NWs)is investigated under different growth conditions.Indium droplets induced by surface reconstruction act as nucleation sites for NW growth.Vertical standing NWs with uniform cross sections are obtained under optimized conditions.It is confirmed that the growth rate of NWs is strongly affected by the surface diffusion adatoms while contributions from the direct impingement of vapor species onto the In droplets can be negligible.The results indicate that the droplet acts as an adatom collector rather than a catalyst.Moreover,the diffusion flow rate of adatoms increases with time at the beginning of growth and stabilizes as the growth proceeds.展开更多
Novel construction of a resonant-cavity-enhanced photodetector(RCE-PD) with monolithic high-contrast grating(HCG)is proposed to overcome the difficulty of fabricating a high reflective mirror of RCE-PD at 1 550 nm. In...Novel construction of a resonant-cavity-enhanced photodetector(RCE-PD) with monolithic high-contrast grating(HCG)is proposed to overcome the difficulty of fabricating a high reflective mirror of RCE-PD at 1 550 nm. In this structure,HCG serves as the top mirror of the RCE-PD, whereas InGaAs serves as a sacrificial layer to achieve monolithic integration.During the bandwidth optimization, the ratio of the thickness of the total intrinsic region and the absorption layer is introduced to realize the simultaneous optimization of the thickness of spacing layers and absorption layer. After structural optimization, the quantum efficiency of the device with diameter of 20 μm is 82% at 1 550 nm, and the 3-dB bandwidth is 34 GHz at a bias of 3 V.展开更多
文摘肺淋巴上皮瘤样癌是一种罕见的原发性肺癌,与Epstein-Barr病毒(Epstein-Barr virus,EBV)感染密切相关,好发于亚裔、年轻、不吸烟人群。肺癌常见的驱动基因在肺淋巴上皮瘤样癌中发生率低,程序性死亡受体配体1(programmed death ligand 1,PD-L1)表达多为阳性。肺淋巴上皮瘤样癌多采取以手术为主的综合治疗模式,含铂类的双药化疗是目前晚期肺淋巴上皮瘤样癌最常见的一线化疗方案,随着肿瘤的诊断与治疗进入精准时代,靶向治疗、免疫治疗可能成为肺淋巴上皮瘤样癌治疗新的突破口。文章综述了肺淋巴上皮瘤样癌最新的诊断与治疗进展,以期为临床医师及研究学者提供参考。
基金The Joint Laboratory of Quantum Optoelectronics and the Theory of Bivergentum and Beijing International Scientific and Technological Cooperation Base of Information Optoelectronics and Nanoheterogeneous Structure,the National Natural and Science Foundation of China(Nos.61574019,61674018,61674020)the Fund of the State Key Laboratory of Information Photonics and Optical Communications,the Specialized Research Fund for the Doctoral Program of Higher Education of China(No.20130005130001)
基金Supported by the National Basic Research Program of China under Grant No 2010CB327600the National High Technology R&D Program of China(2009AA03Z417)+2 种基金the National Natural Science Foundation of China(61020106007)New Century Excellent Talents in University(NCET-08-0736)the 111 Program of China(B07005).
文摘Zinc blende structure GaAs/AlGaAs core-multishell nanowires(NWs)are grown on a GaAs(111)B substrate by a two-temperature process using an Au-catalyzed vapor-liquid-solid mechanism and metal organic chemical vapor deposition,respectively.Defect-free radial heterostructure NWs are formed.It can be concluded that the NWs are grown with the main contributions from the direct impingement of the precursors onto the alloy droplets and little from adatom diffusion.The results indicate that the droplet acts as a catalyst rather than an adatom collector.The photoluminescence spectra reveal that the grown NWs have much higher optical efficiency than bare GaAs NWs.
基金National Basic Research Program of China(2003CB314906)Foundation for Key Program of Ministry of Education, China(104046)
文摘Designed is dispersion-flattened photonic crystal fiber（PCF） with small normal dispersion for generating flat wideband supercontinuum （SC）, and demonstrated is spectrally sliced pulse source which utilizes supereontinuum generated in dispersion-flattened photonic crystal fiber. The results show that the fiber characterized by flattened dispersion with small normal dispersion is suitable for flat wideband supercontinuum generation. In the process of spectral broadening, self-phase modulation plays a dominant role. By filtering the supercontinuum, multi-wavelength pulses can be obtained over a wide spectral range.
基金Supported by the Fundamental Research Funds for the Central University under Grant No 2013RC1205the National Basic Research Program of China under Grant No 2010CB327602。
文摘To explain different doping effects in a buffer layer,thermally annealed interface,and upper epilayers of GaAs/Si films grown by Metalorganic Chemical Vapor Deposition(MOCVD),the behaviors of unintentional doping in GaAs/Si films are investigated in detail.A third doping mechanism of arsine impurity incorporation during the growth process of GaAs/Si films,apart from conventional mechanisms of gas phase reaction and diffusion from the silicon substrate,is proposed.The experimental results reveal that the doping behavior in the buffer layer studied is determined by the three types of doping mechanisms together.However in the thermally annealed interface and upper epilayers,the third doping mechanism is dominant.According to the third mechanism,the background carrier concentration in GaAs/Si films grown by MOCVD could be properly controlled through the arsine flow rate.
基金Supported by the National Basic Research Program of China(2010CB327600)the National Natural Science Foundation of China(61020106007,61077049)+1 种基金New Century Excellent Talents in University(NCET-08-0736)the 111 Program of China(B07005).
文摘The fabrication of self-catalyzed InP nanowires(NWs)is investigated under different growth conditions.Indium droplets induced by surface reconstruction act as nucleation sites for NW growth.Vertical standing NWs with uniform cross sections are obtained under optimized conditions.It is confirmed that the growth rate of NWs is strongly affected by the surface diffusion adatoms while contributions from the direct impingement of vapor species onto the In droplets can be negligible.The results indicate that the droplet acts as an adatom collector rather than a catalyst.Moreover,the diffusion flow rate of adatoms increases with time at the beginning of growth and stabilizes as the growth proceeds.
基金supported by the National Natural Science Foundation of China(Nos.61674018,61574019 and 61674020)the Specialized Research Fund for the Doctoral Program of Higher Education of China(No.20130005130001)the Beijing Municipality Natural Science Foundation(No.4132069)
文摘Novel construction of a resonant-cavity-enhanced photodetector(RCE-PD) with monolithic high-contrast grating(HCG)is proposed to overcome the difficulty of fabricating a high reflective mirror of RCE-PD at 1 550 nm. In this structure,HCG serves as the top mirror of the RCE-PD, whereas InGaAs serves as a sacrificial layer to achieve monolithic integration.During the bandwidth optimization, the ratio of the thickness of the total intrinsic region and the absorption layer is introduced to realize the simultaneous optimization of the thickness of spacing layers and absorption layer. After structural optimization, the quantum efficiency of the device with diameter of 20 μm is 82% at 1 550 nm, and the 3-dB bandwidth is 34 GHz at a bias of 3 V.
