Compressive Behaviour and Failure Mechanisms of GFRP Composite at High Strain Rates

Experimental investigations into the compressive behavior of glass fiber reinforced polymer(GFRP)composite at high strain rates were carried out using a split Hopkinson pressure bar(SHPB)setup.The GFRP laminates were made from E-glass fibers and epoxy resins by vacuum assisted compression molding machine.The results of the compressive tests indicated that the mechanical behavior of the GFRP composite depends highly on the strain rate.The compressive peak stress,toughness and Young's modulus of the GFRP composite increased with the increase of strain rate,while the strain level at the initial stages of damage was shortened with the increase of strain rate.In addition,the dynamic deformation behavior and failure process of the specimens were observed directly by using a high-speed camera.Following the experiments,the fracture morphologies and damage modes were examined by scanning electron microscopy(SEM)to explore the possible failure mechanisms of the specimens.The results showed that multiple failure mechanisms appeared,such as matrix crack,fiber-matrix debonding,fiber failure and shear fracture.

Ultrabroadband and multiband infrared/terahertz photodetectors with high sensitivity

Broadband response is pursued in both infrared(IR)and terahertz(THz)detection technologies,which find their applications in both terrestrial and astronomical realms.Herein,we report an ultrabroadband and multiband IR/THz detector based on blocked-impurity-band detecting principle.The detectors are prepared by implanting phosphorus into germanium(Ge:P),where photoresponses with a P impurity band,a self-interstitial defect band,and a vacancy-P(V-P)pair defect band are realized simultaneously.The response spectra of the detectors show ultrabroad and dual response bands in a range of 3-28μm(IR band)and 40-165μm(THz band),respectively.Additionally,a tiny mid-IR(MIR)band within 3-4.2μm is embedded in the IR band.The THz band arises from the P impurity band,whereas the IR and the MIR bands are ascribed to the two defect bands.At150 m V and 4.5 K,the peak detectivities of the three bands are obtained as 2.9×10^(12) Jones(at 3.9μm),6.8×10^(12) Jones(at 16.3μm),and 9.9×10^(12) Jones(at 116.5μm),respectively.The impressive coverage andsensitivity of the detectors are promising for applications in IR and THz detection technologies.