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Mechanical Characteristics of Superaustenitic Stainless Steel Type 30Cr25Ni32Mo3 at Elevated Temperatures
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作者 Gholam Reza Ebrahimi Hamid Keshmiri hadi arabshahi 《Materials Sciences and Applications》 2010年第6期323-328,共6页
In making tubes of corrosion resistant and hardly deformed steels and alloys, the pilger rolling method is used for hot rolling of final thick-walled tubes or mother tubes of large diameters (above 300 mm) and small q... In making tubes of corrosion resistant and hardly deformed steels and alloys, the pilger rolling method is used for hot rolling of final thick-walled tubes or mother tubes of large diameters (above 300 mm) and small quantities of other size tubes when no other, more efficient tube rolling or extrusion equipment is available. To clarify individual parameters of the production process and make choice of the deformation-and-temperature parameters, mechanical properties of the alloy type 30Cr25Ni32Mo3 Superaustenitic Stainless Steel at various temperatures were studied. The tests have been performed using samples taken from the forged 400 mm diameter billet to determine strength and plastic properties of the billet metal at various temperatures and its macro- and microstructure. The test results will be used in the choice of optimum conditions of preheating of the billets and hot rolling of tubes. On the whole, it should be stated that as-forged alloy 30Cr25Ni32Mo3 features a favorable combination of strength and plastic properties in the hot-working temperature range of 1075-1200?C. 展开更多
关键词 Superaustenitic STAINLESS STEEL HOT DEFORMATION Mechanical Properties MICROSTRUCTURE Evaluation
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Light Effect in Photoionization of Traps in GaN MESFETs
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作者 hadi arabshahi A.Binesh 《Journal of Electronic Science and Technology of China》 2010年第1期51-54,共4页
Trapping of hot electron behavior by trap centres located in buffer layer of a wurtzite phase GaN MESFET has been simulated using an ensemble Monte Carlo simulation. The simulated results show the trap centres are res... Trapping of hot electron behavior by trap centres located in buffer layer of a wurtzite phase GaN MESFET has been simulated using an ensemble Monte Carlo simulation. The simulated results show the trap centres are responsible for current collapse in GaN MESFET at low temperatures. These electrical traps degrade the performance of the device at low temperature. On the opposite, a light-induced increase in the trap-limited drain current results from the photoionization of trapped carriers and their return to the channel under the influence of the built in electric field associated with the trapped charge distribution. The simulated device geometries and doping are matched to the nominal parameters described for the experimental structures as closely as possible, and the predicted drain current and other electrical characteristics for the simulated device including trapping centre effects show close agreement with the available experimantal data. 展开更多
关键词 Buffer layer current collapse drain current photoionization.
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