INIRODUCIIONA newly discovered DNA virus,transfusiontransmitted virus (TTV),was reported as a cause ofpost-transfusion hepatitis of unknown etiology inJapan.In order to investigate TTV prevalence insouthern China,a st...INIRODUCIIONA newly discovered DNA virus,transfusiontransmitted virus (TTV),was reported as a cause ofpost-transfusion hepatitis of unknown etiology inJapan.In order to investigate TTV prevalence insouthern China,a study was carried out amongblood donors,patients with liver diseases andhemodialysis to determine the epidemiologicalcharateristics.展开更多
A visible rectification effect on the current-voltage curves of metal/porous silicon/p-silicon has been observed by current-sensing atomic force microscopy. The current-voltage curves of porous silicon membranes with ...A visible rectification effect on the current-voltage curves of metal/porous silicon/p-silicon has been observed by current-sensing atomic force microscopy. The current-voltage curves of porous silicon membranes with different porosities, prepared through variation of etching current density for a constant time, indicate that a higher porosity results in a higher resistance and thus a lower rectification, until the current reaches a threshold at a porosity 〉55%. We propose that the conductance mode in the porous silicon membrane with porosities 〉55% is mainly a hopping mechanism between nano-crystallites and an inverse static electric field between the porous silicon and p-Si interface blocks the electron injection from porous silicon to p-Si, but with porosities ≤55%, electron flows through a direct continuous channel between nano-crystallites.展开更多
文摘INIRODUCIIONA newly discovered DNA virus,transfusiontransmitted virus (TTV),was reported as a cause ofpost-transfusion hepatitis of unknown etiology inJapan.In order to investigate TTV prevalence insouthern China,a study was carried out amongblood donors,patients with liver diseases andhemodialysis to determine the epidemiologicalcharateristics.
文摘A visible rectification effect on the current-voltage curves of metal/porous silicon/p-silicon has been observed by current-sensing atomic force microscopy. The current-voltage curves of porous silicon membranes with different porosities, prepared through variation of etching current density for a constant time, indicate that a higher porosity results in a higher resistance and thus a lower rectification, until the current reaches a threshold at a porosity 〉55%. We propose that the conductance mode in the porous silicon membrane with porosities 〉55% is mainly a hopping mechanism between nano-crystallites and an inverse static electric field between the porous silicon and p-Si interface blocks the electron injection from porous silicon to p-Si, but with porosities ≤55%, electron flows through a direct continuous channel between nano-crystallites.
