This paper reports the sensitive effect of photoluminescence peak intensity and transmittance affected by B, Al, and N dopants in fluorescent 4H-SiC single crystals. The crystalline type, doping concentration, photolu...This paper reports the sensitive effect of photoluminescence peak intensity and transmittance affected by B, Al, and N dopants in fluorescent 4H-SiC single crystals. The crystalline type, doping concentration, photoluminescence spectra,and transmission spectra were characterized at room temperature. It is found that the doped 4H-SiC single crystal emits a warm white light covering a wide range from 460 nm to 720 nm, and the transmittance increases from ~10% to ~60%with the fluctuation of B, Al, and N ternary dopants. With a parameter of C_(D-A), defined by B, Al, and N concentration, the photoluminescence and transmittance properties can be adjusted by optimal doping regulation.展开更多
基金Project supported by the National Key Research and Development Program of China(Grant Nos.2017YFB0405700 and 2016YFB0400400)the Young Scientists Fund of the National Natural Science Foundation of China(Grant Nos.51602331 and 61404146)the Shanghai Science and Technology Innovation Action Plan Program,China(Grant No.17511106200)
文摘This paper reports the sensitive effect of photoluminescence peak intensity and transmittance affected by B, Al, and N dopants in fluorescent 4H-SiC single crystals. The crystalline type, doping concentration, photoluminescence spectra,and transmission spectra were characterized at room temperature. It is found that the doped 4H-SiC single crystal emits a warm white light covering a wide range from 460 nm to 720 nm, and the transmittance increases from ~10% to ~60%with the fluctuation of B, Al, and N ternary dopants. With a parameter of C_(D-A), defined by B, Al, and N concentration, the photoluminescence and transmittance properties can be adjusted by optimal doping regulation.
