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Ligustrazine monomer against cerebral ischemia/reperfusion injury 被引量:49
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作者 hai-jun gao Peng-fei Liu +7 位作者 Pei-wen Li Zhuo-yan Huang Feng-bo Yu Ting Lei Yong Chen Ye Cheng Qing-chun Mu Hai-yan Huang 《Neural Regeneration Research》 SCIE CAS CSCD 2015年第5期832-840,共9页
Ligustrazine (2,3,5,6-tetramethylpyrazine) is a major active ingredient of the Szechwan lovage rhizome and is extensively used in treatment of ischemic cerebrovascular disease. The mecha- nism of action of ligustraz... Ligustrazine (2,3,5,6-tetramethylpyrazine) is a major active ingredient of the Szechwan lovage rhizome and is extensively used in treatment of ischemic cerebrovascular disease. The mecha- nism of action of ligustrazine use against ischemic cerebrovascular diseases remains unclear at present. This study summarizes its protective effect, the optimum time window of administra- tion, and the most effective mode of administration for clinical treatment of cerebral ischemia/ reperfusion injury. We examine the effects of ligustrazine on suppressing excitatory amino acid release, promoting migration, differentiation and proliferation of endogenous neural stem cells. We also looked at its effects on angiogenesis and how it inhibits thrombosis, the inflammatory response, and apoptosis after cerebral ischemia. We consider that ligustrazine gives noticeable protection from cerebral ischemia/reperfusion injury. The time window of ligustrazine admin- istration is limited. The protective effect and time window of a series of derivative monomers of ligustrazine such as 2-[(1,1-dimethylethyl)oxidoimino]methyl]-3,5,6-trimethylpyrazine, CXC137 and CXC 195 after cerebral ischemia were better than ligustrazine. 展开更多
关键词 nerve regeneration LIGUSTRAZINE ISCHEMIA cerebral ischemia/reperfusion injury neuralregeneration
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An efficient PSP-based model for optimized cross-coupled MOSFETs in voltage controlled oscillator
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作者 Li-heng LOU Ling-ling SUN +1 位作者 Jun LIU hai-jun gao 《Journal of Zhejiang University-Science C(Computers and Electronics)》 SCIE EI 2013年第3期205-213,共9页
This paper proposes an efficient PSP-based model for cross-coupled metal-oxide-semiconductor field-effect transistors(MOSFETs) with optimized layout in the voltage controlled oscillator(VCO).The model employs a PSP ch... This paper proposes an efficient PSP-based model for cross-coupled metal-oxide-semiconductor field-effect transistors(MOSFETs) with optimized layout in the voltage controlled oscillator(VCO).The model employs a PSP charge model to characterize the bias-dependent extrinsic capacitance instead of numerical functions with strong non-linearity.The simulation convergence is greatly improved by this method.An original scheme is developed to extract the parameters of the PSP charge model based on S-parameters measurement.The interconnection parasitics of the cross-coupled MOSFETs are modeled based on vector fitting.The model is verified with an LC VCO design,and exhibits excellent convergence during simulation.The results show improvements as high as 60.5% and 61.8% in simulation efficiency and accuracy,respectively,indicating that the proposed model better characterizes optimized cross-coupled MOSFETs in advanced radio frequency(RF) circuit design. 展开更多
关键词 Layout optimizing Modeling PSP Charge model Cross-coupled Metal-oxide-semiconductor(MOS) Voltage controlled oscillator(VCO)
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