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Improvement of TE-polarized emission in type-Ⅱ InAlN–AlGaN/AlGaN quantum well
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作者 Yi Li Youhua Zhu +2 位作者 Meiyu Wang Honghai Deng haihong yin 《Chinese Physics B》 SCIE EI CAS CSCD 2019年第9期343-347,共5页
The optical properties of the type-Ⅱ lineup InxAl1-xN-Al0.59Ga0.41N/Al0.74Ga0.26N quantum well(QW) structures with different In contents are investigated by using the six-by-six K-P method.The type-Ⅱ lineup structur... The optical properties of the type-Ⅱ lineup InxAl1-xN-Al0.59Ga0.41N/Al0.74Ga0.26N quantum well(QW) structures with different In contents are investigated by using the six-by-six K-P method.The type-Ⅱ lineup structures exhibit the larger product of Fermi-Dirac distribution functions of electron fc^n and hole(1-fv^Um) and the approximately equal transverse electric(TE) polarization optical matrix elements(|Mx|^2) for the c1-v1 transition.As a result, the peak intensity in the TE polarization spontaneous emission spectrum is improved by 47.45%-53.84% as compared to that of the conventional AlGaN QW structure.In addition, the type-Ⅱ QW structure with x^0.17 has the largest TE mode peak intensity in the investigated In-content range of 0.13-0.23.It can be attributed to the combined effect of |Mx|^2 and fc^n(1-fv^Um) for the c1-v1, c1-v2, and c1-v3 transitions. 展开更多
关键词 type-Ⅱ LINEUP quantum well K-P method TRANSVERSE electric(TE) polarized emission
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