In this work,β-Ga_(2)O_(3)thin films were grown on SiO_(2)substrate by atomic layer deposition(ALD)and annealed in N_(2)atmosphere to enhance the crystallization quality of the thin films,which were verified from X-r...In this work,β-Ga_(2)O_(3)thin films were grown on SiO_(2)substrate by atomic layer deposition(ALD)and annealed in N_(2)atmosphere to enhance the crystallization quality of the thin films,which were verified from X-rays diffraction(XRD).Based on the grownβ-Ga_(2)O_(3)thin films,vertical metal-semiconductor-metal(MSM)interdigital photodetectors(PDs)were fabricated and investigated.The PDs have an ultralow dark current of 1.92 pA,ultra-high photo-to-dark current ratio(PDCR)of 1.7×10^(6),and ultra-high detectivity of 4.25×10^(14)Jones at a bias voltage of 10 V under 254 nm deep ultraviolet(DUV).Compared with the horizontal MSM PDs under the same process,the PDCR and detectivity of the fabricated vertical PDs are increased by 1000 times and 100 times,respectively.In addition,the vertical PDs possess a high responsivity of 34.24 A/W and an external quantum efficiency of 1.67×10^(4)%,and also exhibit robustness and repeatability,which indicate excellent performance.Then the effects of electrode size and external irradiation conditions on the performance of the vertical PDs continued to be investigated.展开更多
This study uses atomic layer deposition(ALD)to grow Ga_(2)O_(3)films on SiO_(2)substrates and investigates the influence of film thickness and annealing temperature on film quality.Schottky diode devices are fabricate...This study uses atomic layer deposition(ALD)to grow Ga_(2)O_(3)films on SiO_(2)substrates and investigates the influence of film thickness and annealing temperature on film quality.Schottky diode devices are fabricated based on the grown Ga_(2)O_(3)films,and the effects of annealing temperature,electrode size,and electrode spacing on the electrical characteristics of the devices are studied.The results show that as the film thickness increases,the breakdown voltage of the fabricated devices also increases.A Schottky diode with a thickness of 240 nm can achieve a reverse breakdown voltage of 300 V.The film quality significantly improves as the annealing temperature of the film increases.At a voltage of 5 V,the current of the film annealed at 900℃is 64 times that of the film annealed at 700℃.The optimum annealing temperature for Ohmic contact electrodes is 450℃.At 550℃,the Ohmic contact metal tends to burn,and the performance of the device is reduced.Reducing the electrode spacing increases the forward current of the device but decreases the reverse breakdown voltage.Increasing the Schottky contact electrode size increases the forward current,but the change is not significant,and there is no significant change in the reverse breakdown voltage.The device also performs well at high temperatures,with a reverse breakdown voltage of 220 V at 125℃.展开更多
基金the Natural Science Basic Research Program in Shaanxi Province of China(2023-JC-YB-574)the National Natural Science Foundation of China(62304178)。
文摘In this work,β-Ga_(2)O_(3)thin films were grown on SiO_(2)substrate by atomic layer deposition(ALD)and annealed in N_(2)atmosphere to enhance the crystallization quality of the thin films,which were verified from X-rays diffraction(XRD).Based on the grownβ-Ga_(2)O_(3)thin films,vertical metal-semiconductor-metal(MSM)interdigital photodetectors(PDs)were fabricated and investigated.The PDs have an ultralow dark current of 1.92 pA,ultra-high photo-to-dark current ratio(PDCR)of 1.7×10^(6),and ultra-high detectivity of 4.25×10^(14)Jones at a bias voltage of 10 V under 254 nm deep ultraviolet(DUV).Compared with the horizontal MSM PDs under the same process,the PDCR and detectivity of the fabricated vertical PDs are increased by 1000 times and 100 times,respectively.In addition,the vertical PDs possess a high responsivity of 34.24 A/W and an external quantum efficiency of 1.67×10^(4)%,and also exhibit robustness and repeatability,which indicate excellent performance.Then the effects of electrode size and external irradiation conditions on the performance of the vertical PDs continued to be investigated.
基金the Natural Science Basic Research Program in Shaanxi Province of China(2023-JC-YB-574)the National Natural Science Foundation of China(62204203)。
文摘This study uses atomic layer deposition(ALD)to grow Ga_(2)O_(3)films on SiO_(2)substrates and investigates the influence of film thickness and annealing temperature on film quality.Schottky diode devices are fabricated based on the grown Ga_(2)O_(3)films,and the effects of annealing temperature,electrode size,and electrode spacing on the electrical characteristics of the devices are studied.The results show that as the film thickness increases,the breakdown voltage of the fabricated devices also increases.A Schottky diode with a thickness of 240 nm can achieve a reverse breakdown voltage of 300 V.The film quality significantly improves as the annealing temperature of the film increases.At a voltage of 5 V,the current of the film annealed at 900℃is 64 times that of the film annealed at 700℃.The optimum annealing temperature for Ohmic contact electrodes is 450℃.At 550℃,the Ohmic contact metal tends to burn,and the performance of the device is reduced.Reducing the electrode spacing increases the forward current of the device but decreases the reverse breakdown voltage.Increasing the Schottky contact electrode size increases the forward current,but the change is not significant,and there is no significant change in the reverse breakdown voltage.The device also performs well at high temperatures,with a reverse breakdown voltage of 220 V at 125℃.
