关于后摩尔时代我国集成电路制造领域的一些思考

1.Background,As one of the fundamental and core industries of modern information technology,the integrated circuit(IC)is a basic and leading industry that is closely related to overall global economic and social development.The global semiconductor industry is poised for a decade of growth and is projected to become a trillion-dollar industry by 2030(Fig.1[1]).Technological level and industrial scale are important indicators for evaluating the degree of modernization and comprehensive national strength of a country or region.Hailed as the“industrial food”for a country,IC is the foundation for cultivating and developing strategic emerging industries and promoting the deep integration of informatization and industrialization.Demand for both cutting-edge chips and high-reliability chips continues to be strong in applications deployed throughout the field,from Industry 4.0 to automotive electronics,artificial intelligence,and so forth.As the focus of current international competition,IC also plays a broad and key role in promoting national economic development and social progress,improving people’s living standards,and ensuring national security.The current competition is not related to a certain technology node or single specific technology.Rather,this core competitiveness is the overall strength of the IC industry chain and relies on the ability to track the dynamic targets of industrial development,which fully depends on the support of the global high-end basic industry.

Modulate the superficial structure of La_(2)Ce_(2)O_(7) catalyst with anchoring CuO_(x) species for the selective catalytic oxidation of NH_(3)

Air contamination caused by the ammonia slip phenomenon has gradually captured the researcher’s extensive attention.An effective strategy for controlling fugitive NH_(2)is critical to improving the air quality and living environment.In the present work,CuO_(x)/La_(2)Ce_(2)O_(7)composite as a potential candidate catalyst is synthesized through the electrostatic adsorption method for the selective catalytic oxidation(SCO_(2))of NH_(2)to N.The 5%Cu Ox/La_(2)Ce_(2)O_(7)exhibits the best catalytic activity(T=243℃)and ammonia conversion efficiency.The improvement of performance is mainly attributed to the superficial connection of[Ce-O-Cu],which enhances the capturing ability of ammonia molecule and accelerates the dissociating efficiency of N–H bonding for Nevolution,simultaneously.This work provides a facile method to synthesis pyrochlore-like composite catalyst of NH_(2)-SCO_(2) for solving the problem of ammonia slip pollution in the future.

A 65-nm 1-Gb NOR floating-gate flash memory with less than 50-ns access time

This paper presents a 65-nm 1-Gb NOR-type floating-gate flash memory,in which the cell device and chip circuit are developed and optimized.In order to solve the speed problem of giga-level NOR flash in the deep submicron process,the models of long bit-line and word-line are first given,by which the capacitive and resistive loads could be estimated.Based on that,the read path and key modules are optimized to enhance the chip access property and reliability.With the measurement results,the flash memory cell presents good endurance and retention properties,and the macro is operated with 1-ls/byte program speed and less than 50-ns read time under 3.3 V supply.