A new method to measure trap characteristics in crystalline silicon solar cells is presented.Important parameters of traps including energy level,total concentration of trapping centers and capture cross-section ratio...A new method to measure trap characteristics in crystalline silicon solar cells is presented.Important parameters of traps including energy level,total concentration of trapping centers and capture cross-section ratio of hole to electron are deduced using the Shockley-Read-Hall theory of crystalline silicon solar cells in base region.Based on the as-deduced model,these important parameters of traps are determined by measuring open-circuit voltages of silicon solar cells under monochromatic illumination in the wavelength range 500-1050 nm with and without bias light.The effects of wavelength and intensity of bias light on the measurement results are also discussed.The measurement system used in our experiments is very similar to a quantum efficiency test system which is commercially available.Therefore,our method is very convenient and valuable for detecting deep level traps in crystalline silicon solar cells.展开更多
Single-crystal samples of type-VIII BasGa16-xCuxSn30 （x = 0, 0.03, 0.06, 0.15） clathrates were prepared using the Sn-flux method. At room temperature the carrier density, n, is 3.5-5 × 10^19 cm^-3 for all the s...Single-crystal samples of type-VIII BasGa16-xCuxSn30 （x = 0, 0.03, 0.06, 0.15） clathrates were prepared using the Sn-flux method. At room temperature the carrier density, n, is 3.5-5 × 10^19 cm^-3 for all the samples, the carrier mobility, μH, increases to more than twice that of BasGa16Sn30 for all the Cu doping samples, and consequently the electrical conductivity is enhanced distinctly from 1.90×10^4 S/m to 4.40 ×10^4 S/m, with the Cu composition increasing from x = 0 to x = 0.15. The Seebeck coefficient,α, decreases slightly with the increases in Cu composition. The values are about 0.72 W/mK at 300 K and are almost invariant with temperature up to 500 K for the samples with x = 0 and x = 0.03. The lattice thermal conductivity, μL, decreases from 0.59 W/InK for x = 0 to 0.50 W/mK for x = 0.03 at 300 K. The figure of merit for x = 0.03 reaches 1.35 at 540 K.展开更多
基金Supported by the National Natural Science Foundation of China(61774130,11474248,61790581,51973070)the Ph.D.Pro⁃grams Foundation of Ministry of Education of China(20105303120002)National Key Technology Research and Development Program of the Ministry of Sci⁃ence and Technology of China(2018YFA0209101).
基金Supported by the Yunnan Natural Science Foundation(2005F0007Z).
文摘A new method to measure trap characteristics in crystalline silicon solar cells is presented.Important parameters of traps including energy level,total concentration of trapping centers and capture cross-section ratio of hole to electron are deduced using the Shockley-Read-Hall theory of crystalline silicon solar cells in base region.Based on the as-deduced model,these important parameters of traps are determined by measuring open-circuit voltages of silicon solar cells under monochromatic illumination in the wavelength range 500-1050 nm with and without bias light.The effects of wavelength and intensity of bias light on the measurement results are also discussed.The measurement system used in our experiments is very similar to a quantum efficiency test system which is commercially available.Therefore,our method is very convenient and valuable for detecting deep level traps in crystalline silicon solar cells.
基金Project supported by the National Natural Science Foundation of China(Grant No.50902119)
文摘Single-crystal samples of type-VIII BasGa16-xCuxSn30 （x = 0, 0.03, 0.06, 0.15） clathrates were prepared using the Sn-flux method. At room temperature the carrier density, n, is 3.5-5 × 10^19 cm^-3 for all the samples, the carrier mobility, μH, increases to more than twice that of BasGa16Sn30 for all the Cu doping samples, and consequently the electrical conductivity is enhanced distinctly from 1.90×10^4 S/m to 4.40 ×10^4 S/m, with the Cu composition increasing from x = 0 to x = 0.15. The Seebeck coefficient,α, decreases slightly with the increases in Cu composition. The values are about 0.72 W/mK at 300 K and are almost invariant with temperature up to 500 K for the samples with x = 0 and x = 0.03. The lattice thermal conductivity, μL, decreases from 0.59 W/InK for x = 0 to 0.50 W/mK for x = 0.03 at 300 K. The figure of merit for x = 0.03 reaches 1.35 at 540 K.
