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High gain,broadband p-WSe_(2)/n-Ge van der Waals heterojunction phototransistor with a Schottky barrier collector
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作者 Shuo Li Qiang Wu +8 位作者 haokun ding Songsong Wu Xinwei Cai Rui Wang Jun Xiong Guangyang Lin Wei Huang Songyan Chen Cheng Li 《Nano Research》 SCIE EI CSCD 2023年第4期5796-5802,共7页
Mixed-dimensional van der Waals(vdW)heterostructures based on two-dimensional transition metal dichalcogenides and threedimensional semiconductors have led to a new era in next-generation optoelectronics due to the hi... Mixed-dimensional van der Waals(vdW)heterostructures based on two-dimensional transition metal dichalcogenides and threedimensional semiconductors have led to a new era in next-generation optoelectronics due to the high-quality interfaces and energy band complementation,especially in broadband photodetectors which can be used for all-weather navigation,object identification,etc.However,the reported photodetectors conventionally operated in photodiode mode with low responsivity and a narrow response spectrum.In this study,we report a p-WSe_(2)/n-Ge vdW heterojunction phototransistor with a Schottky barrier collector on n-Ge for broadband photodetection.Large hole/electron injection ratio from p-WSe_(2)/n-Ge heterojunction under forward bias due to their large bandgap offset renders the high photocurrent gain,while the Ge Schottky barrier limits the dark current.The responsivities of the phototransistor at 1.0 V emitter-collector bias are 55,95,and 120 A·W−1 at 405,1,310,and 1,550 nm,respectively,which is superior to that of the corresponding p-WSe_(2)/n-Ge photodiodes.The phototransistor shows a high photocurrent gain of 80,a specific detectivity of 1011 Jones,as well as a fast response time of 290μs at 1,550 nm.The results suggest that the novel phototransistor being implemented with complementary metal-oxide-semiconductor processing is an ideal strategy for high-performance broadband photodetection. 展开更多
关键词 BROADBAND van der Waals(vdW)heterojunction Schottky junction PHOTOTRANSISTOR
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