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The effects of Zn vacancies on ferromagnetism in Cu-doped ZnO films controlled by oxygen pressure and Li doping 被引量:1
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作者 冉从军 杨海龄 +4 位作者 王延恺 Hassan Farooq M 周丽宫 徐晓光 姜勇 《Chinese Physics B》 SCIE EI CAS CSCD 2013年第6期553-556,共4页
Zn0.99Cu0.01O films were studied experimentally and theoretically. The films were prepared by pulsed-laser deposition on Pt(111)/Ti/SiO2/Si substrates under various oxygen pressures to investigate the growth-depende... Zn0.99Cu0.01O films were studied experimentally and theoretically. The films were prepared by pulsed-laser deposition on Pt(111)/Ti/SiO2/Si substrates under various oxygen pressures to investigate the growth-dependence of the ferromagnetic properties. The structural, magnetic, and optical properties were studied, and it was found that all the samples possess a typical wurtzite structure, and that the films exhibit room-temperature ferromagnetism. The sample deposited at 600 ℃ and an oxygen pressure of 10 Pa showed a large saturation magnetization of 0.83 μB/Cu. The enhanced ferromagnetism in the (Cu, Li)-codoped ZnO is attributable to the existence of Zn vacancies (Vzn), as shown by first-principles calcu- lations. The photoluminescence analysis demonstrated the existence of Vzn in both Zn0.99Cu0.01 O and (Cu, Li)-codoped ZnO thin films, and this plays an important role in the increase of ferromagnetism, according to the results of first-principles calculations. 展开更多
关键词 dilute magnetic semiconductor Cu-doped ZnO pulsed laser deposition FIRST-PRINCIPLES
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