A film dosimeter based on optically stimulated luminescence (OSL) material of CaS:Ce,Sm was developed for online irradiation dosimetry measurement.The stimulation is provided by a laser with a wavelength of 980 nm,and...A film dosimeter based on optically stimulated luminescence (OSL) material of CaS:Ce,Sm was developed for online irradiation dosimetry measurement.The stimulation is provided by a laser with a wavelength of 980 nm,and the OSL luminescenceis collected by a photodiode.Using 60Co γ-rays,we investigated the dosimetry characteristic of the dosimeter at different dose rates and total doses.The real-time detection results showed that the OSL signals versus total ionizing dose exhibited a good linearity in a dose range of 0.1-185 Gy.展开更多
Different channel lengths and layouts on 0.18μm NMOS transistors are designed for investigating the dependence of short channel effects(SCEs)on the width of shallow trench isolation(STI)devices and designing in radia...Different channel lengths and layouts on 0.18μm NMOS transistors are designed for investigating the dependence of short channel effects(SCEs)on the width of shallow trench isolation(STI)devices and designing in radiation hardness.Results show that,prior to irradiation,the devices exhibited near–ideal I–V characteristics,with no significant SCEs.Following irradiation,no noticeable shift of threshold voltage is observed,radiation–induced edge–leakage current,however,exhibits significant sensitivity on TID.Moreover,radiation–enhanced drain induced barrier lowering(DIBL)and channel length modulation(CLM)effects are observed on short–channel NMOS transistors.Comparing to stripe–gate layout,enclosed–gate layout has excellent radiation tolerance.展开更多
基金Supported by National Natural Science Foundation of China (11805270,12005293)West Light Foundation of Chinese Academy of Sciences(2019-XBQNXZ-B-013,2018-XBQNXZ-B-003)。
基金Supported by National Natural Science Foundation of China(No.10875168and No.10475112)
文摘A film dosimeter based on optically stimulated luminescence (OSL) material of CaS:Ce,Sm was developed for online irradiation dosimetry measurement.The stimulation is provided by a laser with a wavelength of 980 nm,and the OSL luminescenceis collected by a photodiode.Using 60Co γ-rays,we investigated the dosimetry characteristic of the dosimeter at different dose rates and total doses.The real-time detection results showed that the OSL signals versus total ionizing dose exhibited a good linearity in a dose range of 0.1-185 Gy.
基金Supported by National Laboratory Analog Integrated Circuit Foundation(No.9140C090402110C0906)
文摘Different channel lengths and layouts on 0.18μm NMOS transistors are designed for investigating the dependence of short channel effects(SCEs)on the width of shallow trench isolation(STI)devices and designing in radiation hardness.Results show that,prior to irradiation,the devices exhibited near–ideal I–V characteristics,with no significant SCEs.Following irradiation,no noticeable shift of threshold voltage is observed,radiation–induced edge–leakage current,however,exhibits significant sensitivity on TID.Moreover,radiation–enhanced drain induced barrier lowering(DIBL)and channel length modulation(CLM)effects are observed on short–channel NMOS transistors.Comparing to stripe–gate layout,enclosed–gate layout has excellent radiation tolerance.
