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N1s Electron Binding Energies of CN_x Thin Films Grown by Magnetron Sputtering at Different Temperature 被引量:1
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作者 Zheng, WT Xing, KZ +3 位作者 hellgren, n Ivanov, I Salaneck, WS Sundgren, JE 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 1998年第1期25-28,共4页
Carbon nitride thin films deposited using dc unbalanced magnetron sputtering system have been analyzed by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR) and Raman spectroscopy. ... Carbon nitride thin films deposited using dc unbalanced magnetron sputtering system have been analyzed by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR) and Raman spectroscopy. The XPS data show that N1s binding states depend on substrate temperature T-s, in which the peak at 400.0 eV increases with T-s, whereas the peak at 398.3 eV decreases with T-s slightly. On the basis of XPS, FTIR and Raman spectra, the assignment of N1s electron binding energies was made. The peak at 400.0 eV is attributed to N atoms bonded to sp(2) coordinated C atoms. The peak at 398.3 eV is attributed to N atoms bonded to sp(3) coordinated C atoms as well as N-C bonds. 展开更多
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