Since copper has excellent properties such as malleability and conductivity,it is widely used in the electronics field.Copper sulfate plating is expanding further in fields requiring thick deposits such as for heat di...Since copper has excellent properties such as malleability and conductivity,it is widely used in the electronics field.Copper sulfate plating is expanding further in fields requiring thick deposits such as for heat dissipation boards and bumps for stress relaxation during semiconductor packaging.In this study,high-speed copper plating at 50 A/dm2 or more was achieved using a jet flow device.In addition,as a result of comparison with the low current density film,the current density had little effect on electrical conductivity and film surface structure.On the other hand,it was confirmed that the etching rate of the high current density film was greatly increased as the crystallites on the film surface became smaller than low current density film.Increase in productivity is expected due to shorter plating time enabled by film deposition at high current density.Furthermore,the increase of etching rate is expected to contribute to the suppression of undercuts that occur when removing the seed layer during wiring and bump fabrication.展开更多
Today’s electronic devices have required higher performance properties for 5G and artificial intelligence(AI).High-performance system on chip(SOC),graphic processing unit(GPU),and central processing unit(CPU)requires...Today’s electronic devices have required higher performance properties for 5G and artificial intelligence(AI).High-performance system on chip(SOC),graphic processing unit(GPU),and central processing unit(CPU)requires advanced packages to meet demands for performance,size,and high-speed transmission.To respond to these demands,integration approaches such as 3D IC chip stacking,package on package(PoP),2.5D interposer integration,system-in-package(SiP),and fan-out packaging technologies have emerged[6,8,11,12].Therefore,the package substrate for high-performance device will require low transmission loss and the small package warpage.Low loss materials have limitation of seed layer formation with electroless Cu plating.Also,heat treatment has major impact on substrate warpage in order for growth of plated Cu metal and curing for epoxy mold compound(EMC)process.In this paper,we believe it is possible to create a seed layer on the low-loss material by combining electroless Cu plating and flash lamp annealing(FLA)method instead of sputtering process.In terms of warpage control and metal growth,the flash lamp treatment,not the conventional convection or hot plate type heat treatment,could improve electro-migration between metal line and line through improving large number of(111)slip directions.In addition,flash lamp not only provides alternative to conventional heat treatment process but also significantly reduces substrate warpage.Through result of this study,by using FLA method for advanced package,it is possible to provide solutions in improving adhesion strength between dielectric materials and deposited metal film,and to reduce the warpage of the substrate.展开更多
文摘Since copper has excellent properties such as malleability and conductivity,it is widely used in the electronics field.Copper sulfate plating is expanding further in fields requiring thick deposits such as for heat dissipation boards and bumps for stress relaxation during semiconductor packaging.In this study,high-speed copper plating at 50 A/dm2 or more was achieved using a jet flow device.In addition,as a result of comparison with the low current density film,the current density had little effect on electrical conductivity and film surface structure.On the other hand,it was confirmed that the etching rate of the high current density film was greatly increased as the crystallites on the film surface became smaller than low current density film.Increase in productivity is expected due to shorter plating time enabled by film deposition at high current density.Furthermore,the increase of etching rate is expected to contribute to the suppression of undercuts that occur when removing the seed layer during wiring and bump fabrication.
文摘Today’s electronic devices have required higher performance properties for 5G and artificial intelligence(AI).High-performance system on chip(SOC),graphic processing unit(GPU),and central processing unit(CPU)requires advanced packages to meet demands for performance,size,and high-speed transmission.To respond to these demands,integration approaches such as 3D IC chip stacking,package on package(PoP),2.5D interposer integration,system-in-package(SiP),and fan-out packaging technologies have emerged[6,8,11,12].Therefore,the package substrate for high-performance device will require low transmission loss and the small package warpage.Low loss materials have limitation of seed layer formation with electroless Cu plating.Also,heat treatment has major impact on substrate warpage in order for growth of plated Cu metal and curing for epoxy mold compound(EMC)process.In this paper,we believe it is possible to create a seed layer on the low-loss material by combining electroless Cu plating and flash lamp annealing(FLA)method instead of sputtering process.In terms of warpage control and metal growth,the flash lamp treatment,not the conventional convection or hot plate type heat treatment,could improve electro-migration between metal line and line through improving large number of(111)slip directions.In addition,flash lamp not only provides alternative to conventional heat treatment process but also significantly reduces substrate warpage.Through result of this study,by using FLA method for advanced package,it is possible to provide solutions in improving adhesion strength between dielectric materials and deposited metal film,and to reduce the warpage of the substrate.
