We improved the photovoltaic properties of Cu_2O-based heterojunction solar cells using n-type oxide semiconductor thin films prepared by a sputtering apparatus with our newly developed multi-chamber system. We also o...We improved the photovoltaic properties of Cu_2O-based heterojunction solar cells using n-type oxide semiconductor thin films prepared by a sputtering apparatus with our newly developed multi-chamber system. We also obtained the highest efficiency(3.21%) in an AZO/p-Cu_2O heterojunction solar cell prepared with optimized pre-sputtering conditions using our newly developed multi-chamber sputtering system. This value achieves the same or higher characteristics than AZO/Cu_2O solar cells with a similar structure prepared by the pulse laser deposition method.展开更多
Growth rate has a direct impact on the productivity of nitride LED production. Atmospheric pressure growth of GaN with a growth rate as high as 10/zm/h and also Alo.lGao.gN growth of 1μm/h by using 4 inch by 11 produ...Growth rate has a direct impact on the productivity of nitride LED production. Atmospheric pressure growth of GaN with a growth rate as high as 10/zm/h and also Alo.lGao.gN growth of 1μm/h by using 4 inch by 11 production scale MOVPE are described. XRD of （002） and （102） direction was 200 arcsec and 250 arcsec, respectively. Impact of the growth rate on productivity is discussed.展开更多
基金partly supported by Grant-in-Aid for Scientific Research on Innovative Areas from the Ministry of Education, Culture, Sports, Science and Technology of Japan (No.15K04723)
文摘We improved the photovoltaic properties of Cu_2O-based heterojunction solar cells using n-type oxide semiconductor thin films prepared by a sputtering apparatus with our newly developed multi-chamber system. We also obtained the highest efficiency(3.21%) in an AZO/p-Cu_2O heterojunction solar cell prepared with optimized pre-sputtering conditions using our newly developed multi-chamber sputtering system. This value achieves the same or higher characteristics than AZO/Cu_2O solar cells with a similar structure prepared by the pulse laser deposition method.
文摘Growth rate has a direct impact on the productivity of nitride LED production. Atmospheric pressure growth of GaN with a growth rate as high as 10/zm/h and also Alo.lGao.gN growth of 1μm/h by using 4 inch by 11 production scale MOVPE are described. XRD of （002） and （102） direction was 200 arcsec and 250 arcsec, respectively. Impact of the growth rate on productivity is discussed.
