Cu(copper)-doped ZnO(zinc oxide)was synthesized using Cu(NO3)2·3H2O(copper(II)nitrate)and Zn(NO3)2·6H2O(zinc nitrate)by chemical co-precipitation method.The weight percentages of dopant in solution were Cu(2...Cu(copper)-doped ZnO(zinc oxide)was synthesized using Cu(NO3)2·3H2O(copper(II)nitrate)and Zn(NO3)2·6H2O(zinc nitrate)by chemical co-precipitation method.The weight percentages of dopant in solution were Cu(2,3,and 5 wt%).Cu-doped ZnO thin films were prepared on p-Si(100)substrate by screen printing method.Cu-doped ZnO/Si films were annealed at different temperatures from 300 to 700°C.In this study,Cu-doped ZnO structures were prepared by a simple precipitation technique,and characterized by various techniques such as XRD(X-ray diffraction)and SEM(scanning electron microscope).The electrical properties of Cu-doped ZnO/Si were measured.It has found that Cu-doped ZnO/Si films can be used as optoelectronic devices.展开更多
文摘Cu(copper)-doped ZnO(zinc oxide)was synthesized using Cu(NO3)2·3H2O(copper(II)nitrate)and Zn(NO3)2·6H2O(zinc nitrate)by chemical co-precipitation method.The weight percentages of dopant in solution were Cu(2,3,and 5 wt%).Cu-doped ZnO thin films were prepared on p-Si(100)substrate by screen printing method.Cu-doped ZnO/Si films were annealed at different temperatures from 300 to 700°C.In this study,Cu-doped ZnO structures were prepared by a simple precipitation technique,and characterized by various techniques such as XRD(X-ray diffraction)and SEM(scanning electron microscope).The electrical properties of Cu-doped ZnO/Si were measured.It has found that Cu-doped ZnO/Si films can be used as optoelectronic devices.
