基于领域知识辅助的机器学习方法对软磁金属玻璃性能的预测

提出一种领域知识辅助的机器学习方法,实现对软磁金属玻璃饱和磁化强度(B_(s))和临界尺寸(D_(max))的预测。基于公开的实验数据,建立软磁合金数据库。提出一个通用的特征空间,适用于面向不同预测任务的机器学习模型训练。结果表明,机器学习模型的预测能力比基于物理知识的估计方法精度更高。此外,领域知识辅助的特征选择可在有效减少特征数量的同时,不显著降低模型的预测精度。最后,对软磁金属玻璃临界尺寸的二分类预测进行讨论。

Comparison of the conventional tube and erythrocyte-magnetized technology in titration of red blood cell alloantibodies

BACKGROUND Erythrocyte alloantibodies are mainly produced after immune stimulation,such as blood transfusion,pregnancy,and transplantation,and are the leading causes of severe hemolytic transfusion reactions and difficulty in blood grouping and matching.Therefore,antibody screening is critical to prevent and improve red cell alloantibodies.Routine tube assay is the primary detection method of antibody screening.Recently,erythrocyte-magnetized technology(EMT)has been increasingly used in clinical practice.This study intends to probe the application and efficacy of the conventional tube and EMT in red blood cell alloantibody titration to provide a reference for clinical blood transfusion.AIM To investigate the application value of conventional tube and EMT in red blood cell alloantibody titration and enhance the safety of blood transfusion practice.METHODS A total of 1298 blood samples were harvested from blood donors at the Department of Blood Transfusion of our hospital from March 2021 to December 2022.A 5 mL blood sample was collected in tubing,which was then cut,and the whole blood was put into a test tube for centrifugation to separate the serum.Different red blood cell blood group antibody titers were simultaneously detected using the tube polybrene test,tube antiglobulin test(AGT),and EMT screening irregular antibody methods to determine the best test method.RESULTS Simultaneous detection was performed through the tube polybrene test,tube AGT and EMT screening irregular antibodies.It was discovered that the EMT screening irregular antibody method could detect all immunoglobulin G(IgG)and immunoglobulin M(IgM)irregular antibodies,and the results of manual tube AGT were satisfactory,but the operation time was lengthy,and the equipment had a large footprint.The EMT screening irregular antibody assay was also conducted to determine its activity against type O Rh(D)red blood cells,and the outcomes were satisfactory.Furthermore,compared to the conventional tube method,the EMT screening irregular antibody method was more cost-effective and had significantly higher detection efficiency.CONCLUSION With a higher detection rate,the EMT screening irregular antibody method can detect both IgG and IgM irregular antibodies faster and more effectively than the conventional tube method.

Endothelial progenitor cells in peripheral blood may serve as a biological marker to predict severe acute pancreatitis

AIM To investigate the significance of endothelial progenitor cells(EPCs) in predicting severe acute pancreatitis(SAP).METHODS We recruited 71 patients with acute pancreatitis(AP) and excluded 11 of them; finally, cases of mild acute pancreatitis(MAP)(n = 30) and SAP(n = 30), and healthy volunteers(n = 20) were internalized to investigate levels of EPCs, C-reactive protein(CRP), tumor necrosis factor-alpha(TNF-α), fibrinogen(FIB)and white blood cells(WBC) in peripheral blood. RESULTS The levels of TNF-α, WBC, FIB and CRP were higher both in SAP and MAP cases than in healthy volunteers(P < 0.05, all). Interestingly, the level of EPCs was higher in SAP than MAP(1.63% ± 1.47% vs 6.61% ± 4.28%, P < 0.01), but there was no significant difference between the MAP cases and healthy volunteers(1.63% ± 1.47% vs 0.55% ± 0.54%, P > 0.05). Receiver operating characteristics curve(ROC) showed that EPCs, TNF-α, CRP and FIB were significantly associated with SAP, especially EPCs and CRP were optimal predictive markers of SAP. When the cut-off point for EPCs and CRP were 2.26% and 5.94 mg/d L, the sensitivities were 90.0% and 73.3%, and the specificities were 83.3% and 96.7%. Although, CRP had the highest specificity, and EPCs had the highest sensitivity and highest area under the curve value(0.93). CONCLUSION Data suggest that EPCs may be a new biological marker in predicting SAP.

Dielectric and energy storage properties of PbO–SrO–Nb_(2)O_(5)–Na_(2)O–Si thin films by annealing

Dielectric and energy storage properties of PbOSrO-Na_(2)O-Nb_(2)O_(5)-SiO_(2)(PSNNS) thin films with annealing temperature from 700 to 850 ℃ were investigated by measuring their capacitance-electric filed curve and hysteresis loops.The results show that the highest dielectric constant and energy density are 81.2 and 17.0 J·cm^(-3),respectively,which is obtained in the sample with annealing temperature of 800 ℃.Annealed from 700 to800 ℃,the dielectric constant and energy storage performance of PSNNS films are continuously improved.However,with annealing temperature up to 850 ℃,their dielectric constant decreases,which might be related with the removal of interfacial defects as a function of annealing temperature.Defect is one of the causes of space charge phenomenon,resulting in the increase in dielectric constant.Moreover,the micro structure analysis by X-ray diffraction(XRD) and transmission electron microscope(TEM) indicates that the change of crystallization phase and interfacial polarization takes responsibility to the results.

Improving interfacial and electrical properties of HfO_(2)/SiO_(2)/p-Si stacks with N_(2)-plasma-treated SiO_(2) interfacial layer

The effect of N_(2)-plasma-treated SiO_(2) interfacial layer on the interfacial and electrical characteristics of HfO_(2)/SiO_(2)/p-Si stacks grown by atomic layer deposition(ALD) was investigated.The microstructure and interfacial chemical bonding configuration of the HfO_(2)/SiO_(2)/Si stacks were also examined by high-resolution transmission electron microscopy(HRTEM) and X-ray photoelectron spectroscopy(XPS).Compared with the samples without N2-plasma treatment,it is found that the samples with N2-plasma treatment have less oxygen vacancy density for SiO_(2) interfacial layer and better HfO_(2)/SiO_(2) interface.In agreement with XPS analyses,electrical measurements of the samples with N2-plasma treatment show better interfacial quality,including lower interface-state density(Dit,9.3 × 1011 cm^(-2)·eV^(-1) near midgap) and lower oxidecharge density(Q_(ox),2.5 × 1012 cm^(-2)),than those of the samples without N_(2)-plasma treatment.Additionally,the samples with N_(2)-plasma treatment have better electrical performances,including higher saturation capacitance density(1.49 μF·cm^(-2)) and lower leakage current density(3.2 × 10^(-6) A·cm^(-2) at V_(g)=V_(fb)-1 V).Furthermore,constant voltage stress was applied on the gate electrode to investigate the reliability of these samples.It shows that the samples with N_(2)-plasma treatment have better electrical stability than the samples without N_(2)-plasma treatment.

Au-decorated porous structure graphene with enhanced sensing performance for low-concentration NO2 detection

A recent progress in new emerging two-dimensional(2 D)materials has provided promising opportunity for gas sensing in ultra-low detectable concentration.In this work,we have demonstrated a flexible NO2 gas sensor with porous structure graphene on polyethylene terephthalate substrates operating at room temperature.The gas sensor exhibited good performance with response of 1.2%and a fast response time within 30 s after exposure to50×10^-9 NO2 gas.As porous structure of graphene increased the surface area,the sensor showed high sensitivity of ppb level for NO2 detection.Au nanoparticles were decorated on the surface of the porous structure graphene skeleton,resulting in an incensement of response compared with pristine graphene.Au nanoparticles-decorated graphene exhibits not only better sensitivity(1.5-1.6 times larger than pristine graphene)for NO2 gas detection,but also fast response.The sensor was found to be robust and sensitive under the cycling bending test,which could also be ascribed to the merits of graphene.This porous structure graphene-based gas sensor is expected to enable a simple and inexpensive flexible gas sensing platform.

Recent developments in nonferrous metals and related materials for biomedical applications in China:a review

Biomedical materials have received increasing attention in recent decades and have been used in medical applications to advance patient care,such as prosthetic implants,tissue repair and regeneration,drug delivery systems,pharmaceutical or biological therapy products,and sensitive diagnostic technologies.Among different types of biomedical materials,nonferrous metals and related materials(NMRMs)are important and attractive candidates.The updating of biomedical NMRMs and devices heavily relies on original research and applicationoriented innovation.Here,we provide recent research findings and succinct insights into the developments in NMRMs for biomedical applications in China,including the use of titanium,magnesium,copper,zinc,cobalt,zirconium,hafnium,niobium,rhenium,tantalum,tungsten,silver,gold,platinum,palladium,their alloys and compounds,rare earths,high-entropy alloys,and liquid metals.Finally,the literature review concludes with several possible directions of NMRMs for new and future developments in biomedical engineering.

Resistive switching characteristics of Dy_2O_3 film with a Pt nanocrystal embedding layer formed by pulsed laser deposition

Resistive switching(RS) behaviors of Dy2 O3-based memory devices with and without Pt nanocrystals(Pt-nc) layer were investigated for nonvolatile memory applications. The Cu/Pt-nc/Dy2 O3 /Pt memory exhibits excellent unipolar RS characteristics, including highly uniform switching parameters, lower switching voltage(\1.2 V), high resistance ratio([1 9 104), a large number of switching cycles, as well as long retention time([1 9 105s), owing to the local electric field confined and strengthened near the nanocrystals' location.

Chemical vapor deposition growth and transport properties of MoS_(2)-2H thin layers using molybdenum and sulfur as precursors

This paper introduces a feasible process to achieve the molybdenum disulfide atomic layers using chemical vapor deposition(CVD) method,with molybdenum thin film and solid sulfur as precursors.And some improvements were made to reduce the amount of metastable MoS_(2)-3 R.The morphology of the acquired MoS_(2) layers,existing as triangular flakes or large-area continuous films,can be controlled by adjusting the synthesis time and reacting temperature.The characterization results show that the monolayer MoS_(2) flakes reveal a(002)-oriented growth on SiO_(2)/Si substrates,and its crystalline domain size is approximately 30 μm,and the thickness is 0.65 nm.Since the synthesis of MoS_(2)-3 R is restrained,the electronic transport properties of MoS_(2) with different layers were investigated,revealing that those properties equal with those of MoS_(2) samples prepared by exfoliation methods.

InAs/InAsSb type-Ⅱ superlattice with near room-temperature long-wave emission through interface engineering

Ga-free InAs/InAsSb type-Ⅱ superlattices(T2SL) have extensive application prospective in infrared photodetectors. Achieving higher operation temperature is critical to its commercial applications. Here, a fractional monolayer alloy method was used to grow InAsSb alloy with better controlled alloy composition. The as-grown T2SL gave eleven satellite peaks and a first satellite peak with a narrow full-width-half-maximum (FWHM) of 20.5arcsec (1 arcsec=0.01592°). Strain mapping results indicated limited Sb diffusion through the As-Sb exchange process at the interface. Moreover, unlike interface states caused by the As-Sb exchange effect, this relatively clear interface was distinctive with localized states with higher activation energies of the non-radiative recombination process ((18±1) meV and (84±12) meV at different temperature ranges), which means that this interface state introduced by fractional monolayer alloy growth method can effectively suppress Auger recombination process in T2SL. Through this interface engineering of InAs/InAsSb Type-Ⅱ superlattice, it achieved detective photoluminescence (PL) signal with the center wavelength of 9μm at 250K.

Natural nitrogen-doped multiporous carbon from biological cells as sulfur stabilizers for lithium-sulfur batteries

In this context,we firstly synthesized a novel nitrogen-doped multiporous carbon material from renewable biological cells through a facile chemical activation with K_2CO_3.After sulfur impregnation,the carbon/sulfur composite achieved a sulfur content of about 67 wt%.The C/S composite as the cathode of lithium-sulfur batteries exhibited a discharge capacity of 1410 mAh/g and good capacity retention of912 mAh/g at 0.1C.These outstanding results were attributed to the synergy effect of microporous carbon and natural doping nitrogen atoms.We believe that the facile approach for the synthesis of nitrogen-doped multiporous carbon from the low-cost and sustainable biological resources will not only be applied in lithium-sulfur batteries,but also in other electrode materials.

Energy band alignment of HfO2 on p-type(100)InP

The band alignment of HfO_2 film on p-type(100) InP substrate grown by magnetron sputtering was investigated.The chemical states and bonding characteristics of the system were characterized by X-ray photoelectron spectroscopy(XPS).The results show that there is no existence of Hf-P or Hf-In and there are interfacial In_2O_3and InPO_4 at the interface.Ultraviolet spectrophotometer(UVS) was employed to obtain the band gap value of HfO_2.In 3d and Hf 4f core-level spectra and valence spectra were employed to obtain the valence band offset of HfO_2/InP.Experimental results show that the(5.88 ± 0.05) eV band gap of HfO_2 is aligned to the band gap of InP with a conduction band offset(ΔE_c) of(2.74 ± 0.05) eV and a valence band offset(ΔE_v) of(1.80 ± 0.05) eV.Compared with HfO_2 on Si,HfO_2 on InP exhibits a much larger conduction band offset(1.35 eV larger),which is beneficial to suppress the tunneling leakage current.

X-ray irradiation-induced degradation in Hf_(0.5)Zr_(0.5)O_(2) fully depleted silicon-on-insulator n-type metal oxide semiconductor field-effect transistors

The n-type ultrathin fully depleted silicon-on-insulator(FDSOI) metal-oxide-semiconductor field-effect transistors(MOSFETs),with a Hf_(0.5)Zr_(0.5)O_(2) high dielectric permittivity(high-k) dielectric as gate insulator,were fabricated.The total ionizing dose effects were investigated,and an X-ray radiation dose up to 1500 krad(Si) was applied for both long-and short-channel devices.The short-channel devices(0.025-0.100 μm) exhibited less irradiation sensitivity compared with the long-channel devices(0.35-16 μm),leading to a 71% reduction in the irradiation-induced drain current growth and a 26% decrease in the shift of the threshold voltage.It was experimentally demonstrated that the OFF mode is the worst case among the three working conditions(OFF,ON and A110) for short-channel devices.Also,the determined effective electron mobility was enhanced by 38% after X-ray irradiation,attributed to the different compensations for charges triggered by radiation between the highk dielectric and buried oxide.By extracting the carrier mobility,gate length modulation,and source/drain(S/D)parasitic resistance,the degradation mechanism on X-ray irradiation was revealed.Finally,the split capacitance-voltage measurements were used to validate the analysis.

Facile synthesis of CuO-Co_(3)O_(4)prickly-sphere-like composite for non-enzymatic glucose sensors

In the field of glucose sensors,the development of inexpensive and high-efficiency electrochemical glucose sensors is the current research hotspot.In this paper,CuO-Co_(3)O_(4)composite with a prickly-sphere-like morphology is prepared by the facile hydrothermal method for the non-enzymatic electrochemical glucose detection.X-ray diffraction,scanning electron microscopy,transmission electron microscopy,energy-dispersive X-ray spec-troscopy,and X-ray photoelectron spectroscopy are used to analyze the structure,composition,and morphology of the material.In addition,the electrochemical catalytic perfor-mance of CuO-Co_(3)O_(4)to glucose is obtained by cyclic voltammetry and chronoamperometry.The excellent elec-trochemical sensing performance may be attributed to the large number of catalytic sites in the prickly-sphere-like composite and the synergistic effect of Cu and Co.Under an applied voltage of 0.55 V,CuO-Co_(3)O_(4)composite shows sensitivity to glucose(1503.45μA·(mmol·L^(-1))^(-1)-cm^(-2)),a low detection limit(21.95μmol·L^(-1)),excellent selectivity,a high level of reproducibility,and good sta-bility.This indicates that the CuO-Co_(3)O_(4)composite has a broad prospect of non-enzymatic glucose sensing application.