Passivation of PEA^(+) to MAPbI_(3) (110) surface states by first-principles calculations

The MAPbI_(3)(110) surface with low indices of crystal face is a stable and highly compatible photosensitive surface.Since the electronic states on the surface can be detrimental to the photovoltaic efficiency of the device,they should be passivated.Phenylethylamine(PEA^(+)),as a molecular ligand,has been widely used in continuous degradation and interfacial charge recombination experiments,and has satisfactory performance in improving surface defects.Therefore,we construct an adsorption model of MAPbI_(3) with small molecules,calculating the lattice structure and electronic properties of PEA^(+)-adsorbed MAPbI_(3)(110) surface.It is found that PEA^(+) as apassivator can effectively weaken the electronic states and regulate the band gap of the MAPbI_(3)(110) surface.Before and after adding the passivator,the peak value of electronic state densities at MAPbI_(3)(110) surface is reduced by about 50%,and the band gap is apparently reduced.Moreover,by comparing the Bader atomic charge and spatial charge distributions before and after PEA^(+)’s adsorption on the surface of MAPbI_(3),we observe a substantial change of PEA^(+) charges,which suggests the surface states have been passivated by PEA^(+).

Structure stability, electronic property and voltage profile of LiFe_(1-n)NnP_(1-m)M_(m)O_(4) olivine cathode material

First-principles computational studies under density functional theory(DFT) framework were used to investigate the structural stability, conductivity and voltage profile of LiFe_(1-n)NnP_(1-m)M_(m)O_(4)(N, M = Si or S) electrode materials. It is found that the Li FeP_(7/8)Si_(1/8)O_(4) system has the most stable structure. After doping, the band gap values of the systems decrease gradually, and LiFe_(7/8)S_(1/8)PO_(4) system has a minimum band gap of 1.553 e V, attributed to the hybridization of the Fe-d and S-p orbital electrons. The Li Fe P7/8 S1/8 O4 system demonstrates the characteristic of n-type semiconductor, and other doping systems have the feature of p-type semiconductor. Charge density difference maps show that the covalent property of Si-O bond is enhanced in the Li FeP_(7/8)Si_(1/8)O_(4) system. The average distance of Li and O atoms in the S doping systems increases from 0.21026 to 0.21486 and 0.21129 nm, respectively,indicating that doping broadens significantly the channel of Li ion de-intercalation in LiFe_(7/8)S_(1/8)PO_(4) and LiFeP_(7/8)S_(1/8)O_(4). Additionally, the results of lithium intercalation potential imply that the voltages of the doping systems fallinto the range of 2.23-2.86 V.