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超声引导泡沫硬化治疗静脉曲张术后复发溃疡的疗效分析 被引量:8
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作者 刘鹏 徐文安 +5 位作者 韩雅茹 于红彦 尹楠 张磊 赵增仁 彭军路 《中国现代医学杂志》 CAS 2018年第26期74-78,共5页
目的探讨超声引导泡沫硬化(UGFS)治疗下肢静脉曲张术后复发溃疡的临床疗效。方法选取2014年6月-2015年12月河北医科大学第一医院收治的行UGFS治疗下肢静脉曲张术后复发溃疡的患者45例,对患者临床资料进行回顾性分析,观察不同组别患者泡... 目的探讨超声引导泡沫硬化(UGFS)治疗下肢静脉曲张术后复发溃疡的临床疗效。方法选取2014年6月-2015年12月河北医科大学第一医院收治的行UGFS治疗下肢静脉曲张术后复发溃疡的患者45例,对患者临床资料进行回顾性分析,观察不同组别患者泡沫硬化剂的用量及溃疡愈合时间的差别。结果 3种术式患者术后复发年限比较无差异(P>0.05)。浅静脉+交通静脉治疗组泡沫硬化剂平均用量高于浅静脉组与交通静脉组(P<0.05),C5组与C6组患肢溃疡愈合时间比较有差异(P<0.05)。3组不同性别和肢体溃疡愈合时间比较无差异(P>0.05)。体重指数、年龄与溃疡愈合时间呈正相关(P<0.05)。患者术后并发症血栓性浅静脉炎最常见,发生率为11.1%。有血栓性浅静脉炎患者泡沫硬化剂平均用量高于无血栓性浅静脉炎患者(P<0.05)。术后12个月病变血管完全或部分再通率为20.0%(9/45)。结论 UGFS治疗下肢静脉曲张术后复发溃疡具有治愈率高、并发症少等特点,是一种简便、精准、有效的诊疗方法。 展开更多
关键词 超声引导泡沫硬化 术后复发溃疡 泡沫用量 溃疡愈合时间
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Improved carrier injection and confinement in InGaN light-emitting diodes containing GaN/AlGaN/GaN triangular barriers 被引量:2
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作者 Li-Wen Cheng Jian Ma +9 位作者 Chang-Rui Cao Zuo-Zheng Xu Tian Lan Jin-Peng Yang Hai-Tao Chen hong-yan yu Shu-Dong Wul Shun Yao Xiang-Hua Zeng Zai-Quan Xu 《Chinese Physics B》 SCIE EI CAS CSCD 2018年第8期48-52,共5页
In this study, an InGaN lighting-emitting diode (LED) containing GaN/A1GaN/GaN triangular barriers is proposed and investigated numerically. The simulation results of output performance, carrier concentration, and r... In this study, an InGaN lighting-emitting diode (LED) containing GaN/A1GaN/GaN triangular barriers is proposed and investigated numerically. The simulation results of output performance, carrier concentration, and radiative recombination rate indicate that the proposed LED has a higher output power and an internal quantum efficiency, and a lower efficiency droop than the LED containing conventional GaN or A1GaN barriers. These improvements mainly arise from the modified energy bands, which is evidenced by analyzing the LED energy band diagram and electrostatic field near the active region. The modified energy bands effectively improve carrier injection and confinement, which significantly reduces electron leakage and increases the rate of radiative recombination in the quantum wells. 展开更多
关键词 lighting-emitting diode gallium nitride efficiency droop triangular barrier
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Electrically and Optically Bistable Operation in an Integration of a 1310 nm DFB Laser and a Tunneling Diode
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作者 Ya-Jie Li Jia-Qi Wang +7 位作者 Lu Guo Guang-Can Chen Zhao-Song Li hong-yan yu Xu-Liang Zhou Huo-Lei Wang Wei-Xi Chen Jiao-Qing Pan 《Chinese Physics Letters》 SCIE CAS CSCD 2018年第4期38-41,共4页
We experimentally demonstrate an In P-based hybrid integration of a single-mode DFB laser emitting at around 1310 nm and a tunneling diode. The evident negative differential resistance regions are obtained in both ele... We experimentally demonstrate an In P-based hybrid integration of a single-mode DFB laser emitting at around 1310 nm and a tunneling diode. The evident negative differential resistance regions are obtained in both electrical and optical output characteristics. The electrical and optical bistabilities controlled by the voltage through the tunneling diode are also measured. When the voltage changes between 1.46 V and 1.66 V, a 200-mV-wide hysteresis loop and an optical power ON/OFF ratio of 17 dB are obtained. A side-mode suppression ratio of the integrated device in the ON state is up to 43 dB. The tunneling diode can switch on/off the laser within a very small voltage range compared with that directly controlled by a voltage source. 展开更多
关键词 DFB In Electrically and Optically Bistable Operation in an Integration of a 1310 nm DFB Laser and a Tunneling Diode
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