In this study, an InGaN lighting-emitting diode （LED） containing GaN/A1GaN/GaN triangular barriers is proposed and investigated numerically. The simulation results of output performance, carrier concentration, and r...In this study, an InGaN lighting-emitting diode （LED） containing GaN/A1GaN/GaN triangular barriers is proposed and investigated numerically. The simulation results of output performance, carrier concentration, and radiative recombination rate indicate that the proposed LED has a higher output power and an internal quantum efficiency, and a lower efficiency droop than the LED containing conventional GaN or A1GaN barriers. These improvements mainly arise from the modified energy bands, which is evidenced by analyzing the LED energy band diagram and electrostatic field near the active region. The modified energy bands effectively improve carrier injection and confinement, which significantly reduces electron leakage and increases the rate of radiative recombination in the quantum wells.展开更多
We experimentally demonstrate an In P-based hybrid integration of a single-mode DFB laser emitting at around 1310 nm and a tunneling diode. The evident negative differential resistance regions are obtained in both ele...We experimentally demonstrate an In P-based hybrid integration of a single-mode DFB laser emitting at around 1310 nm and a tunneling diode. The evident negative differential resistance regions are obtained in both electrical and optical output characteristics. The electrical and optical bistabilities controlled by the voltage through the tunneling diode are also measured. When the voltage changes between 1.46 V and 1.66 V, a 200-mV-wide hysteresis loop and an optical power ON/OFF ratio of 17 dB are obtained. A side-mode suppression ratio of the integrated device in the ON state is up to 43 dB. The tunneling diode can switch on/off the laser within a very small voltage range compared with that directly controlled by a voltage source.展开更多
基金Project supported by the National Key Research and Development Program of China(Grant Nos.2017YFB0403100 and 2017YFB0403101)the National Natural Science Foundation of China(Grant Nos.61404114,61504119,and 11004170)+1 种基金the China Postdoctoral Science Foundation(Grant No.2017M611923)the Jiangsu Planned Projects for Postdoctoral Research Funds,China(Grant No.1701067B)
文摘In this study, an InGaN lighting-emitting diode （LED） containing GaN/A1GaN/GaN triangular barriers is proposed and investigated numerically. The simulation results of output performance, carrier concentration, and radiative recombination rate indicate that the proposed LED has a higher output power and an internal quantum efficiency, and a lower efficiency droop than the LED containing conventional GaN or A1GaN barriers. These improvements mainly arise from the modified energy bands, which is evidenced by analyzing the LED energy band diagram and electrostatic field near the active region. The modified energy bands effectively improve carrier injection and confinement, which significantly reduces electron leakage and increases the rate of radiative recombination in the quantum wells.
基金Supported by the National Key Research and Development Program of China under Grant No 2017YFB0405301the National Natural Science Foundation of China under Grant Nos 61604144 and 61504137
文摘We experimentally demonstrate an In P-based hybrid integration of a single-mode DFB laser emitting at around 1310 nm and a tunneling diode. The evident negative differential resistance regions are obtained in both electrical and optical output characteristics. The electrical and optical bistabilities controlled by the voltage through the tunneling diode are also measured. When the voltage changes between 1.46 V and 1.66 V, a 200-mV-wide hysteresis loop and an optical power ON/OFF ratio of 17 dB are obtained. A side-mode suppression ratio of the integrated device in the ON state is up to 43 dB. The tunneling diode can switch on/off the laser within a very small voltage range compared with that directly controlled by a voltage source.
