Effect of Dy addition on microstructure and mechanical properties of Mg-4Y-3Nd-0.4Zr alloy

Minor Dy element was added into a Mg?4Y?3Nd?0.4Zr alloy,and its effects on the microstructure and the mechanicalproperties at elevated temperatures were investigated.Scanning electron microscope(SEM)and transmission electron microscope(TEM)were used to observe the microstructures.The results indicated that the as-cast eutectic and isolated cuboid-shaped Mg?REphases were Mg5RE and Mg3RE17,respectively,and distributed mainly along grain boundaries.After a solution treatment,theeutectic Mg5RE phases were dissolved into the matrix,whereas the Mg3RE17compound still remained.After peak aging,fineMg?RE phases were precipitated homogeneously within the matrix of the alloys containing Dy.Dy addition can result in asignificant improvement in the tensile strength at both room and elevated temperatures,and a slight decrease in the elongation.

Microstructure and elevated-temperature tensile properties of differential pressure sand cast Mg-4Y-3Nd-0.5Zr alloy

The microstructures of an Mg-4Y-3Nd-0.5Zr alloy by differential pressure casting were investigated using scanning electron microscopy （SEM） and transmission electron microscopy （TEM）, and its tensile deformation behavior was measured using a Gleeble1500D themo-simulation machine in the temperature range of 200 to 400 ℃ at initial strain rates of 5×10^-4 to 10^-1 s^-1. Results show that the as-cast microstructure consists of primary α-Mg phase and bone-shaped Mg5RE eutectic phase distributed along the grain boundary. The eutectic phase is dissolved into the matrix after solution treatment and subsequently precipitates during peak aging. Tensile deformation tests show that the strain rate has little effect on stress under 300 ℃. Tensile stress decreases with an increase in temperature and the higher strain rate leads to an increase in stress above 300 ℃. The fracture mechanism exhibits a mixed quasi-cleavage fracture at 200 ℃, while the fracture above 300 ℃ is a ductile fracture. The dimples are melted at 400 ℃ with the lowest strain rate of 10^-4 s^-1.

Abnormal phenomenon of source-drain current of AlGaN/GaN heterostructure device under UV/visible light irradiation

We report an abnormal phenomenon that the source-drain current(I_(D))of AlGaN/GaN heterostructure devices decreases under visible light irradiation.When the incident light wavelength is 390 nm,the photon energy is less than the band gaps of GaN and AlGaN whereas it can causes an increase of ID.Based on the UV light irradiation,a decrease of I_(D) can still be observed when turning on the visible light.We speculate that this abnormal phenomenon is related to the surface barrier height,the unionized donor-like surface states below the surface Fermi level and the ionized donor-like surface states above the surface Fermi level.For visible light,its photon energy is less than the surface barrier height of the AlGaN layer.The electrons bound in the donor-like surface states below the Fermi level are excited and trapped by the ionized donor-like surface states between the Fermi level and the conduction band of AlGaN.The electrons trapped in ionized donor-like surface states show a long relaxation time,and the newly ionized donor-like surface states below the surface Fermi level are filled with electrons from the two-dimensional electron gas(2DEG)channel at AlGaN/GaN interface,which causes the decrease of ID.For the UV light,when its photon energy is larger than the surface barrier height of the AlGaN layer,electrons in the donor-like surface states below the Fermi level are excited to the conduction band and then drift into the 2DEG channel quickly,which cause the increase of ID.

Distribution of donor states on the surface of AlGaN/GaN heterostructures

The uniform distribution model of the surface donor states in AlGaN/GaN heterostructures has been widely used in the theoretical calculation.A common and a triple-channel AlGaN/GaN heterostructure Schottky barrier diodes have been fabricated to verify the models,but the calculation results show the uniform distribution model can not provide enough electrons to form three separate 2DEGs in the triple-channel Al GaN/GaN heterostructure.Our experiments indicate the uniform distribution model is not quite right,especially for the multiple-channel AlGaN/GaN heterostructures.Besides,it is found the exponential distribution model possibly matches the actual distribution of the surface donor states better,which allows the 2DEG to form in each channel structure during the calculation.The exponential distribution model would be helpful in the research field.