The Ni_81Fe_19 / Ta films with different NiFe thickness were prepared atdifferent base vacuums and sputtering pressures. The results of magnetic measurement and atomicforce microscope (AFM) showed that the films prepa...The Ni_81Fe_19 / Ta films with different NiFe thickness were prepared atdifferent base vacuums and sputtering pressures. The results of magnetic measurement and atomicforce microscope (AFM) showed that the films prepared at higher base vacuum and lower sputteringpressure had larger DELTAR/R. The reason should be that higher base vacuum and lower sputteringpressure introduce larger grainsize and lower surface roughness, which will weaken the scattering ofelectrons, reduce the resistance R, and increase DELTAR/R.展开更多
The structures of Ta/Ni81Fe19 and Ni81Fe19/Ta are commonly used in magnetoresistance multilayers. It is found that the thickness of dead layer in Ta/Ni81Fe19/Ta was about 1.6±0.2nm. X-ray photoelectron spectrosco...The structures of Ta/Ni81Fe19 and Ni81Fe19/Ta are commonly used in magnetoresistance multilayers. It is found that the thickness of dead layer in Ta/Ni81Fe19/Ta was about 1.6±0.2nm. X-ray photoelectron spectroscopy (XPS) was used to study the interfaces of Ta/Ni81Fe19 and Ni81Fe19/Ta. The results show that there is a reaction at the two interfaces: 2Ta+Ni=NiTa2, which caused the thinning of the effective NiFe layer. Furthermore, this reaction could also explain the phenomenon that the dead layer thickness of spin valves multilayers prepared by MBE is thinner than those prepared by magnetron sputtering.展开更多
基金This work was financially supported by the Nationl Science Foundation of China under the contract No. 19890310.
文摘The Ni_81Fe_19 / Ta films with different NiFe thickness were prepared atdifferent base vacuums and sputtering pressures. The results of magnetic measurement and atomicforce microscope (AFM) showed that the films prepared at higher base vacuum and lower sputteringpressure had larger DELTAR/R. The reason should be that higher base vacuum and lower sputteringpressure introduce larger grainsize and lower surface roughness, which will weaken the scattering ofelectrons, reduce the resistance R, and increase DELTAR/R.
基金This work was supported by the National Natural Science Foundation of China(under Grant No.19890310).
文摘The structures of Ta/Ni81Fe19 and Ni81Fe19/Ta are commonly used in magnetoresistance multilayers. It is found that the thickness of dead layer in Ta/Ni81Fe19/Ta was about 1.6±0.2nm. X-ray photoelectron spectroscopy (XPS) was used to study the interfaces of Ta/Ni81Fe19 and Ni81Fe19/Ta. The results show that there is a reaction at the two interfaces: 2Ta+Ni=NiTa2, which caused the thinning of the effective NiFe layer. Furthermore, this reaction could also explain the phenomenon that the dead layer thickness of spin valves multilayers prepared by MBE is thinner than those prepared by magnetron sputtering.
