A gated Hall-bar device is made from an epitaxially grown,free-standing InSb nanosheet on a hexagonal boron nitride(hBN)dielectric/graphite gate structure and the electron transport properties in the InSb nanosheet ar...A gated Hall-bar device is made from an epitaxially grown,free-standing InSb nanosheet on a hexagonal boron nitride(hBN)dielectric/graphite gate structure and the electron transport properties in the InSb nanosheet are studied by gate-transfer characteristic and magnetotransport measurements at low temperatures.The measurements show that the carriers in the InSb nanosheet are of electrons and the carrier density in the nanosheet can be highly efficiently tuned by the graphite gate.The mobility of the electrons in the InSb nanosheet is extracted from low-field magneotransport measurements and a value of the mobility exceeding~1.8×10^(4) cm^(2)·V^(-1)·s^(-1) is found.High-field magentotransport measurements show well-defined Shubnikov-de Haas(SdH)oscillations in the longitudinal resistance of the InSb nanosheet.Temperature-dependent measurements of the SdH oscillations are carried out and key transport parameters,including the electron effective mass m*~0.028m0 and the quantum lifetimeτ~0.046 ps,in the InSb nanosheet are extracted.It is for the first time that such experimental measurements have been reported for a free-standing InSb nanosheet and the results obtained indicate that InSb nanosheet/hBN/graphite gate structures can be used to develop advanced quantum devices for novel physics studies and for quantum technology applications.展开更多
The interplay between superconductivity and the Kondo effect has stimulated significant interest in condensed matter physics.They compete when their critical temperatures are close and can give rise to a quantum phase...The interplay between superconductivity and the Kondo effect has stimulated significant interest in condensed matter physics.They compete when their critical temperatures are close and can give rise to a quantum phase transition that can mimic Majorana zero modes.Here,we have fabricated and measured Al-InSb nanowire quantum dot-Al devices.In the Kondo regime,a supercurrent-induced zero-bias conductance peak emerges.This zero-bias peak shows an anomalous negative magnetoresistance(NMR)at weak magnetic fields.We attribute this anomalous NMR to quasiparticle trapping at vortices in the superconductor leads as a weak magnetic field is applied.The trapping effect lowers the quasiparticle-caused dissipation and thus enhances the Josephson current.This work connects the vortex physics and the supercurrent tunneling in Kondo regimes and can help further understand the physics of Josephson quantum dot system.展开更多
基金Project supported by National Key Research and Development Program of China(Grant Nos.2017YFA0303304 and 2016YFA0300601)the National Natural Science Foundation of China(Grant Nos.92165208,92065106,61974138,11874071,91221202,and 91421303)+1 种基金the Beijing Academy of Quantum Information Sciences(Grant No.Y18G22)Dong Pan also acknowledges the support from the Youth Innovation Promotion Association,Chinese Academy of Sciences(Grant Nos.2017156 and Y2021043).
文摘A gated Hall-bar device is made from an epitaxially grown,free-standing InSb nanosheet on a hexagonal boron nitride(hBN)dielectric/graphite gate structure and the electron transport properties in the InSb nanosheet are studied by gate-transfer characteristic and magnetotransport measurements at low temperatures.The measurements show that the carriers in the InSb nanosheet are of electrons and the carrier density in the nanosheet can be highly efficiently tuned by the graphite gate.The mobility of the electrons in the InSb nanosheet is extracted from low-field magneotransport measurements and a value of the mobility exceeding~1.8×10^(4) cm^(2)·V^(-1)·s^(-1) is found.High-field magentotransport measurements show well-defined Shubnikov-de Haas(SdH)oscillations in the longitudinal resistance of the InSb nanosheet.Temperature-dependent measurements of the SdH oscillations are carried out and key transport parameters,including the electron effective mass m*~0.028m0 and the quantum lifetimeτ~0.046 ps,in the InSb nanosheet are extracted.It is for the first time that such experimental measurements have been reported for a free-standing InSb nanosheet and the results obtained indicate that InSb nanosheet/hBN/graphite gate structures can be used to develop advanced quantum devices for novel physics studies and for quantum technology applications.
基金supported by the Swedish Research Council(VR)the National Natural Science Foundation of China(Grant Nos.92165208,11874071,91221202,91421303,and 11904399)+7 种基金the National Key Research and Development Program of China(Grant Nos.2016YFA0300601,and 2017YFA0303304)Beijing Academy of Quantum Information Sciences(Grant No.Y18G22)the financial supports by Hunan Provincial Science Foundation for Distinguished Young Scholars(Grant No.2021JJ10043)the Innovation Program for Quantum Science and Technology(Grant No.2021ZD0302401)the financial support by the Spanish Ministry of Economy and Competitiveness(Grant No.PID2020-117347GBI00)the financial supports by the Spanish Ministry of Economy and Competitiveness(Grant No.PID2020-11778GB-I00)the Mara de Maeztu project CEX2021-001164-M funded by the MCIN/AEI/10.13039/501100011033the supports from CSIC Research Platform PTI-001 and through the grant LINKB20072(CSIC)。
文摘The interplay between superconductivity and the Kondo effect has stimulated significant interest in condensed matter physics.They compete when their critical temperatures are close and can give rise to a quantum phase transition that can mimic Majorana zero modes.Here,we have fabricated and measured Al-InSb nanowire quantum dot-Al devices.In the Kondo regime,a supercurrent-induced zero-bias conductance peak emerges.This zero-bias peak shows an anomalous negative magnetoresistance(NMR)at weak magnetic fields.We attribute this anomalous NMR to quasiparticle trapping at vortices in the superconductor leads as a weak magnetic field is applied.The trapping effect lowers the quasiparticle-caused dissipation and thus enhances the Josephson current.This work connects the vortex physics and the supercurrent tunneling in Kondo regimes and can help further understand the physics of Josephson quantum dot system.