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On the ion distributions at the separatrices during symmetric magnetic reconnection 被引量:2
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作者 hongtao huang YiQun Yu +2 位作者 JinBin Cao Lei Dai RongSheng Wang 《Earth and Planetary Physics》 CSCD 2021年第2期205-217,共13页
A particle-in-cell simulation of symmetric reconnection with zero guide field is carried out to understand the dynamics of ions along the separatrices.Through the investigation of ion velocity distributions at differe... A particle-in-cell simulation of symmetric reconnection with zero guide field is carried out to understand the dynamics of ions along the separatrices.Through the investigation of ion velocity distributions at different moments and locations along the separatrices,a typical distribution is found:two counter-streaming populations in the perpendicular direction,with another two populations accelerated into distinct energy levels in the parallel direction.Backward tracing of ions reveals that the counter-streaming cores are mostly composed of ions initially located at the same side of the separatrix,while the other two accelerated populations in the parallel direction are composed of ions crossing through the neutral sheet.Through analysis of energy conversion of these populations,it is found that the ion energization along the separatrix is attributable primarily to the Hall electric field,while that in the region between the two separatrices is caused primarily by the induced reconnection electric field.For the counter-streaming population,the low-energy ions that cross the separatrix twice are affected by both Hall and reconnection electric fields,while the high-energy ions that directly enter the separatrix from the unperturbed plasma are energized mainly by the Hall electric field.For the two energized populations in the parallel direction,the ions with lower-energy are accelerated mainly by the in-plane electric field and the Hall electric field on the opposite side of the separatrix,whereas the ions with higher-energy not only experience the same energization process but also are constantly accelerated by the reconnection electric field. 展开更多
关键词 magnetic reconnection particle-in-cell simulation energetic particles
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低压气井排水采气用喷射器的性能 被引量:5
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作者 熊至宜 刘洋 +2 位作者 李元 黄宏韬 李涛 《过程工程学报》 CAS CSCD 北大核心 2020年第7期770-778,共9页
目前传统排水采气工艺对于低压气井的适应性较差,为解决此问题,本工作提出了一种新型的喷射器复合排水采气工艺。通过采用高压气体作为驱动流体,防止二次污染,并通过与泡排组成复合工艺的方式解决效率低下的问题,其中喷射器技术是核心... 目前传统排水采气工艺对于低压气井的适应性较差,为解决此问题,本工作提出了一种新型的喷射器复合排水采气工艺。通过采用高压气体作为驱动流体,防止二次污染,并通过与泡排组成复合工艺的方式解决效率低下的问题,其中喷射器技术是核心。采用数值模拟的方法,以引射比为性能指标,通过对喷射器气相内部流场流动特征进行分析,得到了喷射器的结构尺寸、运行工况对喷射器引射比的影响规律。结果表明,喷射器在引射过程中存在抽吸作用和剪切加速作用;剪切加速作用只能使引射流体最多被加速至音速;在壅塞工况下,喷射器运行表现主要由抽吸作用决定,增加喷嘴渐扩段锥度和面积比,能减缓壅塞工况。运行工况主要通过影响激波强度与喷射器运行状态影响喷射器运行表现,工作压力的增大和出口压力的下降均会提高引射比,但会导致壅塞状态的发生。壅塞工况下,引射比受工作压力影响且与出口压力无关。 展开更多
关键词 喷射器 激波 射流核心 有效引射区域 壅塞现象
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Fabrication of Ti/Al/Mg laminated composites by hot roll bonding and their microstructures and mechanical properties 被引量:6
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作者 Pengju WANG Zejun CHEN +3 位作者 hongtao huang Jianshu LIN Boxin LI Qing LIU 《Chinese Journal of Aeronautics》 SCIE EI CAS CSCD 2021年第8期192-201,共10页
Ti/Al/Mg laminated composites were successfully fabricated by hot roll bonding.The effects of the rolling reduction on the microstructural evolution and mechanical properties of the composites were explored.The result... Ti/Al/Mg laminated composites were successfully fabricated by hot roll bonding.The effects of the rolling reduction on the microstructural evolution and mechanical properties of the composites were explored.The results show that Ti/Al/Mg laminated sheets exhibit good interfacial bonding.The rolling reduction has a significant effect on the deformation inhomogeneity through the thickness of the Al layer.The initial grains of the Al layer near the Ti/Al interface are fragmented into fine equiaxed grains,and the grains at the center and near the Al/Mg interface are elongated.The R-cube shear texture of the Al layer forms near the Ti/Al interface and permeates into the center layer in the samples with greater rolling reductions.The b-fiber rolling texture of the Al layer is observed near the Al/Mg interface and increases with the increase of rolling reduction.The stress–strain curves indicate that the fracture appears first in the Mg layer.With the increasing rolling reduction,the ultimate tensile and yield strength values increase,and the elongation up to the Mg layer fracture decreases. 展开更多
关键词 Al texture Hot roll bonding Interfacial microstructure Mechanical property Ti/Al/Mg laminated sheet
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Ladder-like metal oxide nanowires: Synthesis, electrical transport, and enhanced light absorption properties 被引量:4
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作者 Bo Liang hongtao huang +6 位作者 Zhe Liu Gui Chen Gang Yu Tao Luo Lei Liao Di Chen Guozhen Shen 《Nano Research》 SCIE EI CAS CSCD 2014年第2期272-283,共12页
Transparent metal oxide nanowires (NWs) have attracted intense research interest in recent years. We report here the synthesis of interesting ladder-like metal oxide NWs, including In2O3, SnO2, ZnO, and Ga2O3, via a... Transparent metal oxide nanowires (NWs) have attracted intense research interest in recent years. We report here the synthesis of interesting ladder-like metal oxide NWs, including In2O3, SnO2, ZnO, and Ga2O3, via a facile chemical vapor deposition (CVD) method. Their structural features and growth mechanism are demonstrated in detail by using the ladder-like In2O3 NWs as an example. Single ladder-like NW-based field-effect transistors (FETs) and photodetectors (PDs) of SnO2 were fabricated in order to investigate their electrical transport and light absorption properties. Compared with straight NW-based FETs which operate in an enhancement mode (E-mode), FETs build on ladder-like NWs operate in a depletion mode (D-mode). The ladder-like NWs also give higher carrier concentrations than conventional single nanowires. Finite-difference time-domain (FDTD) simulations have been performed on the ladder-like NWs and the results reveal a great enhancement of light absorption with both transverse-electric (TE) and transverse-magnetic (TM) polarization modes, which is in good agreement with the experimental results. 展开更多
关键词 IN2O3 SnO2 NANOWIRES field-effect transistors PHOTODETECTORS finite-differencetime-domain
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