Natural space presents a complicated radiation environment containing various energetic particle types at different flux level and the flux of the particles is not constant modulating by solar activities[1]. On the ot...Natural space presents a complicated radiation environment containing various energetic particle types at different flux level and the flux of the particles is not constant modulating by solar activities[1]. On the other hand, the heavy ion flux applied in ground based single event test was commonly set at a fixed value. Refs. [2] and [3] both pointed out that the single event test result of harden device may exhibit flux dependency. It is necessary to fully study the ion flux dependency on single event effect.展开更多
Monolayer graphene exfoliated on SiO2/Si substrate and bulk HOPG were irradiated by swift heavy ions (SHIs,479 MeV 86Kr and 112Sn) and highly charged ions (HCIs, 4 MeV 86Kr19+). The different irradiation effects cause...Monolayer graphene exfoliated on SiO2/Si substrate and bulk HOPG were irradiated by swift heavy ions (SHIs,479 MeV 86Kr and 112Sn) and highly charged ions (HCIs, 4 MeV 86Kr19+). The different irradiation effects caused by these two kinds of different ions were investigated by Raman spectrometer. The similarities and differences between HCIs and SHIs impacted graphene and HOPG are presented.展开更多
PRESTAGE is a Monte Carlo simulation code which calculates proton single event effect cross sections from heavy ion test data. It can accurately predict not only single event upsets induced by proton indirect ionizati...PRESTAGE is a Monte Carlo simulation code which calculates proton single event effect cross sections from heavy ion test data. It can accurately predict not only single event upsets induced by proton indirect ionization,but also single event latch-ups and proton direct ionization effects[1]. However, in practical applications some of the input parameters are difficult to obtain. For instance, the thickness of the sensitive volume is closely related to the topology, doping concentration, and other device parameters. Device suppliers are generally reluctant to disclose such information due to the consideration of intellectual property protection. Therefore, examining the sensitivity to the input parameters is important to the usage of the PRESTAGE method.展开更多
Space radiation environments in which satellites and spacecraft are flying contain a large amount of high-energy protons. These protons could induce single event effects in semi-conductor devices and severely destroy ...Space radiation environments in which satellites and spacecraft are flying contain a large amount of high-energy protons. These protons could induce single event effects in semi-conductor devices and severely destroy the operational reliability of the device. Therefore, estimating proton single event effect cross-sections and calculating error rates in space for the spaceflight devices are vital to the safety guarantee of the satellite in orbit[1]. Nowadays, the most commonly used theoretical methods of predicting proton single event effect cross-sections give inaccurate predictions in many circumstances[2].展开更多
InP crystals and GaN films were irradiated by 86Kr and 209Bi ions of initial kinetic energy 25 and 9.5 MeV/u, respectively. The ion fluence ranging from 51010 to 3.61012 ions/cm2 was applied. The thicknesses of the ...InP crystals and GaN films were irradiated by 86Kr and 209Bi ions of initial kinetic energy 25 and 9.5 MeV/u, respectively. The ion fluence ranging from 51010 to 3.61012 ions/cm2 was applied. The thicknesses of the InP and the GaN films were 500 and 30 m, respectively. After irradiation, Raman spectra were measured using 532 nm laser as an excitation source in backscattering geometry.展开更多
Due to the increasing applications in optical devices electronics and nanosensors[1], 1D nanomaterials are becoming the extensive research area of physics, chemistry, medical, electronics and biology. As a member of 1...Due to the increasing applications in optical devices electronics and nanosensors[1], 1D nanomaterials are becoming the extensive research area of physics, chemistry, medical, electronics and biology. As a member of 1D nanostructured materials, the multilayer nanowires exhibit special properties and have strong potential applications in the fields of optoelectronic devices and nanosensors [2].展开更多
MoS2 is layered semiconductor with indirect band-gap of 1.2 eV[1]. Monolayer MoS2 is one layer of Mo atoms sandwiched between two layers of S atoms. The thickness of monolayer MoS2 is 0.65 nm. Monolayer MoS2 has direc...MoS2 is layered semiconductor with indirect band-gap of 1.2 eV[1]. Monolayer MoS2 is one layer of Mo atoms sandwiched between two layers of S atoms. The thickness of monolayer MoS2 is 0.65 nm. Monolayer MoS2 has direct band-gap (1.8 eV). Because of the unique electrical, optical, and mechanical properties, monolayer MoS2 has promising application prospects in nanoelectronic and optolelectronic devices. Considering the radiation environment which these devices work in, it is necessary to estimate the radiation resistance ability of MoS2.展开更多
VATA160 is a low-noise, low-power commercial Application Specific Integrated Circuit (ASIC) chip designed by IDEAS (Norway). It is a core device in the electronics system of the sub-detectors on the scientific satelli...VATA160 is a low-noise, low-power commercial Application Specific Integrated Circuit (ASIC) chip designed by IDEAS (Norway). It is a core device in the electronics system of the sub-detectors on the scientific satellite Dark Matter Particle Explorer (DAMPE)[1]. During its service period, DAMPE will encounter energetic and high flux protons from the space radiation environments.展开更多
Muscovite mica sheets with a thickness of 12 m were irradiated by swift heavy ions Kr and Bi from Heavy IonResearch Facility in Lanzhou(HIRFL). The uences range from 11010 to 11012 ions/cm2. The electronic energylo...Muscovite mica sheets with a thickness of 12 m were irradiated by swift heavy ions Kr and Bi from Heavy IonResearch Facility in Lanzhou(HIRFL). The uences range from 11010 to 11012 ions/cm2. The electronic energyloss (dE/dx)e increases from 5.9 to 31.5 keV/nm. The vibrational modi cations in irradiated mica were investigatedby Fourier-transform infrared spectroscopy and the latent tracks were observed by transmission electron microscope(TEM). The infrared spectrum shows that motions from all atom types in the muscovite mica structure could befound in modes for all vibrations. As shown in Fig. 1, the intensity of all vibrational modes in mica, including theOH stretch motion at 3621 cm??1, decreased with the increasing (dE/dx)e. The similar tendency is found in samplesirradiated by swift heavy ions with increasing ion uence. It is indicated that defects and structural modi cationsgenerated during swift heavy ion irradiation, and more defects are introduced by irradiation with higher ion uence.展开更多
Single crystal (100) InP samples and (0001) GaN epitaxial layers were irradiated at the Heavy Ion ResearchFacility in Lanzhou (HIRFL) with 86Kr ions at room temperature. The ion fluence was varied from 5×1010 to1...Single crystal (100) InP samples and (0001) GaN epitaxial layers were irradiated at the Heavy Ion ResearchFacility in Lanzhou (HIRFL) with 86Kr ions at room temperature. The ion fluence was varied from 5×1010 to1×1012 cm?2. Additionally, thin aluminum foils with different thickness (some tens of micrometers) were placed infront of some samples to decelerate the SHI's. Ion beam scanning was used to irradiate the whole sample surfacein a uniform way and maintained normal incidence. To prevent sample heating during high-energy irradiation, theflux was kept constant below 1.3×1010 cm?2 s?1. The modifications of the samples were investigated by XRD.展开更多
Two-dimensional (2D) materials have attracted great research interests due to their unique properties. 2DMoS2, unlike its bulk form which widely used as solid lubricant and catalyst, is of brilliant application prospe...Two-dimensional (2D) materials have attracted great research interests due to their unique properties. 2DMoS2, unlike its bulk form which widely used as solid lubricant and catalyst, is of brilliant application prospect innanoelectronics and optoelectrnics. The electronic devices work in kinds of radiation environment. To evaluate theion radiation effects on material properties and stability of device, the swift heavy ion radiation effect on single-layerMoS2 was studied in this work[1??2].展开更多
As one of the most used non-destructive, high-resolution techniques for the study of the structure of carbon materials, Raman spectroscopy is able to provide valuable information about defects, stacking of the graphen...As one of the most used non-destructive, high-resolution techniques for the study of the structure of carbon materials, Raman spectroscopy is able to provide valuable information about defects, stacking of the graphene layers, the size of crystallites in- and out-of-plane of graphite and edge states. Since Tuinstra and Koenig revealed the relationship between the intensity ratio of D to G mode and the size of the graphite micro-crystals, most groups paid main attention to the first-order Raman spectroscopy of irradiated graphite ranging from 1 000 to 2 000 cm?1.展开更多
文摘Natural space presents a complicated radiation environment containing various energetic particle types at different flux level and the flux of the particles is not constant modulating by solar activities[1]. On the other hand, the heavy ion flux applied in ground based single event test was commonly set at a fixed value. Refs. [2] and [3] both pointed out that the single event test result of harden device may exhibit flux dependency. It is necessary to fully study the ion flux dependency on single event effect.
文摘Monolayer graphene exfoliated on SiO2/Si substrate and bulk HOPG were irradiated by swift heavy ions (SHIs,479 MeV 86Kr and 112Sn) and highly charged ions (HCIs, 4 MeV 86Kr19+). The different irradiation effects caused by these two kinds of different ions were investigated by Raman spectrometer. The similarities and differences between HCIs and SHIs impacted graphene and HOPG are presented.
文摘PRESTAGE is a Monte Carlo simulation code which calculates proton single event effect cross sections from heavy ion test data. It can accurately predict not only single event upsets induced by proton indirect ionization,but also single event latch-ups and proton direct ionization effects[1]. However, in practical applications some of the input parameters are difficult to obtain. For instance, the thickness of the sensitive volume is closely related to the topology, doping concentration, and other device parameters. Device suppliers are generally reluctant to disclose such information due to the consideration of intellectual property protection. Therefore, examining the sensitivity to the input parameters is important to the usage of the PRESTAGE method.
文摘Space radiation environments in which satellites and spacecraft are flying contain a large amount of high-energy protons. These protons could induce single event effects in semi-conductor devices and severely destroy the operational reliability of the device. Therefore, estimating proton single event effect cross-sections and calculating error rates in space for the spaceflight devices are vital to the safety guarantee of the satellite in orbit[1]. Nowadays, the most commonly used theoretical methods of predicting proton single event effect cross-sections give inaccurate predictions in many circumstances[2].
文摘InP crystals and GaN films were irradiated by 86Kr and 209Bi ions of initial kinetic energy 25 and 9.5 MeV/u, respectively. The ion fluence ranging from 51010 to 3.61012 ions/cm2 was applied. The thicknesses of the InP and the GaN films were 500 and 30 m, respectively. After irradiation, Raman spectra were measured using 532 nm laser as an excitation source in backscattering geometry.
文摘Due to the increasing applications in optical devices electronics and nanosensors[1], 1D nanomaterials are becoming the extensive research area of physics, chemistry, medical, electronics and biology. As a member of 1D nanostructured materials, the multilayer nanowires exhibit special properties and have strong potential applications in the fields of optoelectronic devices and nanosensors [2].
文摘MoS2 is layered semiconductor with indirect band-gap of 1.2 eV[1]. Monolayer MoS2 is one layer of Mo atoms sandwiched between two layers of S atoms. The thickness of monolayer MoS2 is 0.65 nm. Monolayer MoS2 has direct band-gap (1.8 eV). Because of the unique electrical, optical, and mechanical properties, monolayer MoS2 has promising application prospects in nanoelectronic and optolelectronic devices. Considering the radiation environment which these devices work in, it is necessary to estimate the radiation resistance ability of MoS2.
文摘VATA160 is a low-noise, low-power commercial Application Specific Integrated Circuit (ASIC) chip designed by IDEAS (Norway). It is a core device in the electronics system of the sub-detectors on the scientific satellite Dark Matter Particle Explorer (DAMPE)[1]. During its service period, DAMPE will encounter energetic and high flux protons from the space radiation environments.
文摘Muscovite mica sheets with a thickness of 12 m were irradiated by swift heavy ions Kr and Bi from Heavy IonResearch Facility in Lanzhou(HIRFL). The uences range from 11010 to 11012 ions/cm2. The electronic energyloss (dE/dx)e increases from 5.9 to 31.5 keV/nm. The vibrational modi cations in irradiated mica were investigatedby Fourier-transform infrared spectroscopy and the latent tracks were observed by transmission electron microscope(TEM). The infrared spectrum shows that motions from all atom types in the muscovite mica structure could befound in modes for all vibrations. As shown in Fig. 1, the intensity of all vibrational modes in mica, including theOH stretch motion at 3621 cm??1, decreased with the increasing (dE/dx)e. The similar tendency is found in samplesirradiated by swift heavy ions with increasing ion uence. It is indicated that defects and structural modi cationsgenerated during swift heavy ion irradiation, and more defects are introduced by irradiation with higher ion uence.
文摘Single crystal (100) InP samples and (0001) GaN epitaxial layers were irradiated at the Heavy Ion ResearchFacility in Lanzhou (HIRFL) with 86Kr ions at room temperature. The ion fluence was varied from 5×1010 to1×1012 cm?2. Additionally, thin aluminum foils with different thickness (some tens of micrometers) were placed infront of some samples to decelerate the SHI's. Ion beam scanning was used to irradiate the whole sample surfacein a uniform way and maintained normal incidence. To prevent sample heating during high-energy irradiation, theflux was kept constant below 1.3×1010 cm?2 s?1. The modifications of the samples were investigated by XRD.
文摘Two-dimensional (2D) materials have attracted great research interests due to their unique properties. 2DMoS2, unlike its bulk form which widely used as solid lubricant and catalyst, is of brilliant application prospect innanoelectronics and optoelectrnics. The electronic devices work in kinds of radiation environment. To evaluate theion radiation effects on material properties and stability of device, the swift heavy ion radiation effect on single-layerMoS2 was studied in this work[1??2].
文摘As one of the most used non-destructive, high-resolution techniques for the study of the structure of carbon materials, Raman spectroscopy is able to provide valuable information about defects, stacking of the graphene layers, the size of crystallites in- and out-of-plane of graphite and edge states. Since Tuinstra and Koenig revealed the relationship between the intensity ratio of D to G mode and the size of the graphite micro-crystals, most groups paid main attention to the first-order Raman spectroscopy of irradiated graphite ranging from 1 000 to 2 000 cm?1.
