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Blue-Green Electroluminescence of Free-Standing Diamond Thin Films 被引量:3
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作者 ZHANG Binglin SHEN Shupo +4 位作者 WANG Jian’en HE Jintian howard r.shanks Moeljanto W.Leksono Robert Girvan 《Chinese Physics Letters》 SCIE CAS CSCD 1994年第4期235-238,共4页
Blue-green electroluminescence has been observed in free-standing diamond films which were deposited by microwave plasma assisted CVD on silicon substrates.The electroluminescence device is driven by a 60 Hz power sup... Blue-green electroluminescence has been observed in free-standing diamond films which were deposited by microwave plasma assisted CVD on silicon substrates.The electroluminescence device is driven by a 60 Hz power supply.The threshold voltage was about 112 V peak-to-peak.The electroluminescence spectrum at room temperature,showed a blue-green band with the peak centered at 485nm suggesting band A type emission.Electroluminescence was also observed at 77K. 展开更多
关键词 ELECTROLUMINESCENCE DIAMOND FILMS
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Electroluminescence of Boron Doped Diamond Thin Films 被引量:2
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作者 ZHANG Bing-lin WANG Xiao-ping +3 位作者 HE Jin-tian Liu Da-jun WANG Jian-en howard r.shanks 《Chinese Physics Letters》 SCIE CAS CSCD 1996年第6期455-457,共3页
Blue electroluminescence of boron doped diamond thin film is reported.The boron doped diamond thin films were deposited by microwave plasma assisted chemical vapor deposition on silicon substrate.The electroluminescen... Blue electroluminescence of boron doped diamond thin film is reported.The boron doped diamond thin films were deposited by microwave plasma assisted chemical vapor deposition on silicon substrate.The electroluminescence device was driven by a frequency-modulated power supply.The optimum frequency is near 3 kHz.The dependence of electroluminescence intensity on boron impurity has been investigated.The intensity increases with increasing boron impurity.This is expected result according to“Band A”electroluminescence mechanism of donor-accepter pairs recombination. 展开更多
关键词 BORON DIAMOND DONOR
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金刚石薄膜的紫外区电致发光
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作者 张兵临 王小平 +3 位作者 何金田 刘大军 王建恩 howard r.shanks 《科学通报》 EI CAS CSCD 北大核心 1996年第6期492-494,共3页
金刚石薄膜在光谱蓝区的电致发光已有过一些研究工作。然而迄今为止,金刚石薄膜在紫外光谱区的电致发光现象尚未见有报道。我们采用了非晶金刚石薄膜——本征金刚石薄膜——掺杂金刚石薄膜3层结构,制备了电致发光器件。观察到在近紫外... 金刚石薄膜在光谱蓝区的电致发光已有过一些研究工作。然而迄今为止,金刚石薄膜在紫外光谱区的电致发光现象尚未见有报道。我们采用了非晶金刚石薄膜——本征金刚石薄膜——掺杂金刚石薄膜3层结构,制备了电致发光器件。观察到在近紫外光谱区380nm处有一发光主峰。 为了提高金刚石薄膜的成核密度,改善薄膜的均匀性,我们采用脉冲激光沉积技术首先在硅衬底上沉积一层非晶金刚石薄膜。非晶金刚石薄膜脉冲激光沉积的实验装置已在文献[4]中有过详细描述。采用波长355nm,重复频率5Hz的Q开关3次谐波YAG激光器,激光功率密度为3.5×10~8W/cm^2。沉积时间5min,获得的非晶金刚石薄膜厚度为0.15μm,电阻率为1.33×10~6Ω·cm。为了提高电致发光器件的击穿电压。 展开更多
关键词 金刚石薄膜 电致发光 紫外光谱区 薄膜
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Switching Behaviour of Polycrystalline Diamond Thin Film
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作者 沈书泊 张兵临 +4 位作者 何金田 王建恩 howard r.shanks Moeljanto W.Leksono Bob Girvan 《Chinese Science Bulletin》 SCIE EI CAS 1993年第5期382-384,共3页
Switching phenomena in some semiconductor wafers and thin films were observed early. However, to our knowledge, there is no report about the switching behaviour of diamond thin film. Because the diamond thin film poss... Switching phenomena in some semiconductor wafers and thin films were observed early. However, to our knowledge, there is no report about the switching behaviour of diamond thin film. Because the diamond thin film possesses a great number of good properties, such as wide band gap, high breakdown voltage, high electron mobilities and high electron saturation velocity, the investigation on the switching behaviour of diamond thin film will be of great value for achieving high voltage and high power switching devices. We 展开更多
关键词 POLYCRYSTALLINE DIAMOND THIN film SWITCHING BEHAVIOUR bistability.
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多晶金刚石薄膜的开关特性
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作者 沈书泊 张兵临 +4 位作者 何金田 王建恩 howard r.shanks Moeljanto W.Leksono Bob Girvan 《科学通报》 EI CAS CSCD 北大核心 1992年第17期1563-1564,共2页
开关现象在一些片状和薄膜半导体样品中早巳观察到.但是,迄今为止,尚未见到有关金刚石薄膜开关特性的报道.鉴于金刚石薄膜有着许多优异的电学特性,如有较宽的能带间隙、高的击穿电压、高的电子迁移率以及高的饱和电子速度,因而,金刚石... 开关现象在一些片状和薄膜半导体样品中早巳观察到.但是,迄今为止,尚未见到有关金刚石薄膜开关特性的报道.鉴于金刚石薄膜有着许多优异的电学特性,如有较宽的能带间隙、高的击穿电压、高的电子迁移率以及高的饱和电子速度,因而,金刚石薄膜开关特性的研究,无疑会对实现高压、大功率开关器件有重要应用价值.我们研究了无衬底多晶金刚石薄膜的电流(I)-电压(U)特性.发现,金刚石薄膜在液氮温度和常温下有明显的开关特性,而液氮温度下的开关特性还具有明显的双稳态特点. 展开更多
关键词 多晶 金刚石 薄膜 开关特性
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