This paper presents sputtered-deposited Ag nanoparticles (NPs) on the encapsulant material (ethylene vinyl acetate, EVA) with the variation of annealing condition on crystalline silicon solar cell to enhance the light...This paper presents sputtered-deposited Ag nanoparticles (NPs) on the encapsulant material (ethylene vinyl acetate, EVA) with the variation of annealing condition on crystalline silicon solar cell to enhance the light intensity, and a conventional solar cell is also performed for comparison. It was found that an increase in the transmittance at the wavelength of 500 - 800 nm was detected in the Ag nanoparticle solar cells. And red-light enhancement of around 2% was measured in the Ag-sputtered solar module under annealing condition of 700℃ for 3 min from incident photon to converted electron (IPCE) profile. The photovoltaic performance of solar modules was characterized by a flasher system in AAA class (temporal instability, spectral match, and irradiance non-uniformity). The IV curve showed a current enhancement with Ag-EVA sample, and thus a high power output around 0.250 W was observed. A high fill factor of 73.63% also implied a high performance in series and shunt resistance. Surface plasmonic resonance effects of Ag nanoparticles deposited on the surface of solar cell were examined and discussed. This paper not only illustrated the performance of the surface plasmonic resonance of a solar device but also verified the application in the industrial production.展开更多
The pressure to reduce solar energy costs encourages efforts to reduce the thickness of silicon wafers. Thus, the cell bowing problem associated with the use of thin wafers has become increasingly important, as it can...The pressure to reduce solar energy costs encourages efforts to reduce the thickness of silicon wafers. Thus, the cell bowing problem associated with the use of thin wafers has become increasingly important, as it can lead to the cracking of cells and thus to high yield losses. In this paper, a systematic .approach for simulating the cell bowing induced by the firing process is presented. This approach consists of three processes： （1） the material properties are determined using a nanoidentation test; （2） the thicknesses of aluminum （AI） paste and silver （Ag） busbars and fingers are measured using scanning electron microscopy; （3） non-linear finite element analysis （FEA） is used for simulating the cell bowing induced by the firing process. As a result, the bowing obtained using FEA simulation agrees better with the experimental data than that using the bowing calculations suggested in literature. In addition, the total in-plane residual stress state in the wafer/cell due to the firing process can be determined using the FEA simulation. A detailed analysis of the firing-induced stress state in single crystalline silicon （sc-Si）, cast, and edge-defined film-fed growth （EFG） multi-crystalline silicon wafers of different thicknesses is presented. Based on this analysis, a simple residual stress calculation is developed to estimate the maximum in-plane principal stress in the wafers. It is also proposed that the metallization pattern, Ag busbars and fingers screen printed on the front of a solar cell, can be designed using this approach. A practical case ofa 3-busbar Si solar cell is presented.展开更多
文摘This paper presents sputtered-deposited Ag nanoparticles (NPs) on the encapsulant material (ethylene vinyl acetate, EVA) with the variation of annealing condition on crystalline silicon solar cell to enhance the light intensity, and a conventional solar cell is also performed for comparison. It was found that an increase in the transmittance at the wavelength of 500 - 800 nm was detected in the Ag nanoparticle solar cells. And red-light enhancement of around 2% was measured in the Ag-sputtered solar module under annealing condition of 700℃ for 3 min from incident photon to converted electron (IPCE) profile. The photovoltaic performance of solar modules was characterized by a flasher system in AAA class (temporal instability, spectral match, and irradiance non-uniformity). The IV curve showed a current enhancement with Ag-EVA sample, and thus a high power output around 0.250 W was observed. A high fill factor of 73.63% also implied a high performance in series and shunt resistance. Surface plasmonic resonance effects of Ag nanoparticles deposited on the surface of solar cell were examined and discussed. This paper not only illustrated the performance of the surface plasmonic resonance of a solar device but also verified the application in the industrial production.
文摘The pressure to reduce solar energy costs encourages efforts to reduce the thickness of silicon wafers. Thus, the cell bowing problem associated with the use of thin wafers has become increasingly important, as it can lead to the cracking of cells and thus to high yield losses. In this paper, a systematic .approach for simulating the cell bowing induced by the firing process is presented. This approach consists of three processes： （1） the material properties are determined using a nanoidentation test; （2） the thicknesses of aluminum （AI） paste and silver （Ag） busbars and fingers are measured using scanning electron microscopy; （3） non-linear finite element analysis （FEA） is used for simulating the cell bowing induced by the firing process. As a result, the bowing obtained using FEA simulation agrees better with the experimental data than that using the bowing calculations suggested in literature. In addition, the total in-plane residual stress state in the wafer/cell due to the firing process can be determined using the FEA simulation. A detailed analysis of the firing-induced stress state in single crystalline silicon （sc-Si）, cast, and edge-defined film-fed growth （EFG） multi-crystalline silicon wafers of different thicknesses is presented. Based on this analysis, a simple residual stress calculation is developed to estimate the maximum in-plane principal stress in the wafers. It is also proposed that the metallization pattern, Ag busbars and fingers screen printed on the front of a solar cell, can be designed using this approach. A practical case ofa 3-busbar Si solar cell is presented.
