The transport properties of core–shell nanowires(CSNWs)under interface modulation and confinement are investigated based on the atomic-bond-relaxation(ABR)correlation mechanism and Fermi’s golden rule.An analytical ...The transport properties of core–shell nanowires(CSNWs)under interface modulation and confinement are investigated based on the atomic-bond-relaxation(ABR)correlation mechanism and Fermi’s golden rule.An analytical expression for the relationship between carrier mobility and interface mismatch strain is derived and the influence of size,shell thickness and alloyed layer on effective mass,band structures,and deformation potential constant are studied.It is found that interface modulation can not only reduce the lattice mismatch to optimize the band alignment,but also participate in the carrier transport for enhancing mobility.Moreover,the underlying mechanism regarding the interface shape dependence of transport properties in CSNWs is clarified.The great enhancement of electron mobility suggests that the interface modulation may become a potential pathway to improving the performance of nanoelectronic devices.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.91833302 and U2001215)the Guangdong Basic and Applied Basic Research Foundation,China(Grant No.2022A1515010989)the Special Project in Key Fields of Guandong Universities,China(Grant No.2022ZDZX3015)。
文摘The transport properties of core–shell nanowires(CSNWs)under interface modulation and confinement are investigated based on the atomic-bond-relaxation(ABR)correlation mechanism and Fermi’s golden rule.An analytical expression for the relationship between carrier mobility and interface mismatch strain is derived and the influence of size,shell thickness and alloyed layer on effective mass,band structures,and deformation potential constant are studied.It is found that interface modulation can not only reduce the lattice mismatch to optimize the band alignment,but also participate in the carrier transport for enhancing mobility.Moreover,the underlying mechanism regarding the interface shape dependence of transport properties in CSNWs is clarified.The great enhancement of electron mobility suggests that the interface modulation may become a potential pathway to improving the performance of nanoelectronic devices.
