Graphene/silicon(Gr/Si)Schottky barrier solar cells(SBSCs)are attractive for harvesting solar energy and have been gaining grounds for its low-cost solution-processing.The interfacial barrier between graphene and sili...Graphene/silicon(Gr/Si)Schottky barrier solar cells(SBSCs)are attractive for harvesting solar energy and have been gaining grounds for its low-cost solution-processing.The interfacial barrier between graphene and silicon facilitates the reducing excessive carrier recombination while accelerating the separation processes of photo-generated carriers at the interface,which empowers the performance of Gr/Si SBSCs.However,the difficulty to control the interface thickness prevents its application.Here,we introduce the graphene oxide quantum dots(GOQDs)as a unique interfacial modulation species with tunable thickness by controlling the GOQDs particle size.The power conversion efficiency(PCE)of 13.67%for Gr/Si-based SBSC with outstanding stability in the air is obtained with the optimal barrier thickness(26 nm)and particle size(4.15 nm)of GOQDs.The GOQDs in Gr/Si-based SBSCs provide the extra band bending which further enhances the PCE for its photovoltaic applications.展开更多
基金the National Natural Science Foundation of China(Grant No.61764009,51762043,51974143)the National Key R&D Program of China(No.2018YFC1901801,No.2018YFC1901805)+2 种基金the Major Science and Technology Projects in Yunnan Province(No.2019ZE007)the Key Project of Yunnan Province Natural Science Fund(No.2018FA027)the Yunan Ten Thousand Talents Plan Young&Elite Talents Project,and the Program for Innovative Research Team in University of Ministry of Education of China(No.IRT_17R48).
文摘Graphene/silicon(Gr/Si)Schottky barrier solar cells(SBSCs)are attractive for harvesting solar energy and have been gaining grounds for its low-cost solution-processing.The interfacial barrier between graphene and silicon facilitates the reducing excessive carrier recombination while accelerating the separation processes of photo-generated carriers at the interface,which empowers the performance of Gr/Si SBSCs.However,the difficulty to control the interface thickness prevents its application.Here,we introduce the graphene oxide quantum dots(GOQDs)as a unique interfacial modulation species with tunable thickness by controlling the GOQDs particle size.The power conversion efficiency(PCE)of 13.67%for Gr/Si-based SBSC with outstanding stability in the air is obtained with the optimal barrier thickness(26 nm)and particle size(4.15 nm)of GOQDs.The GOQDs in Gr/Si-based SBSCs provide the extra band bending which further enhances the PCE for its photovoltaic applications.
