The requirement of stress analysis and measurement is increasing with the great development of heterogeneous structures and strain engineering in the field of semiconductors.Micro-Raman spectroscopy is an effective me...The requirement of stress analysis and measurement is increasing with the great development of heterogeneous structures and strain engineering in the field of semiconductors.Micro-Raman spectroscopy is an effective method for the measurement of intrinsic stress in semiconductor structures.However,most existing applications of Raman-stress measurement use the classical model established on the (001) crystal plane.A non-negligible error may be introduced when the Raman data are detected on surfaces/cross-sections of different crystal planes.Owing to crystal symmetry,the mechanical,physical and optical parameters of different crystal planes show obvious anisotropy,leading to the Raman-mechanical relationship dissimilarity on the different crystal planes.In this work,a general model of stress measurement on crystalline silicon with an arbitrary crystal plane was presented based on the elastic mechanics,the lattice dynamics and the Raman selection rule.The wavenumberstress factor that is determined by the proposed method is suitable for the measured crystal plane.Detailed examples for some specific crystal planes were provided and the theoretical results were verified by experiments.展开更多
With the application of strain engineering in microelectronics,complex stress states are introduced into advanced semiconductor devices.However,there is still a lack of effective metrology for the decoupling analysis ...With the application of strain engineering in microelectronics,complex stress states are introduced into advanced semiconductor devices.However,there is still a lack of effective metrology for the decoupling analysis of the complex stress states in semiconductor materials.This paper presents an investigation on the 2-axis stress component decoupling of{100}monocrystalline silicon(c-Si)by using oblique backscattering micro-Raman spectroscopy.A spectral-mechanical model was established,and two practicable methods for actual stress decoupling analyses were proposed.The verification experiments demonstrated the correctness and applicability of the methods proposed in this paper.展开更多
基金This work is financially supported by the National Natural Science Foundation of China(Grants 11772223,11772227,and 61727810).
文摘The requirement of stress analysis and measurement is increasing with the great development of heterogeneous structures and strain engineering in the field of semiconductors.Micro-Raman spectroscopy is an effective method for the measurement of intrinsic stress in semiconductor structures.However,most existing applications of Raman-stress measurement use the classical model established on the (001) crystal plane.A non-negligible error may be introduced when the Raman data are detected on surfaces/cross-sections of different crystal planes.Owing to crystal symmetry,the mechanical,physical and optical parameters of different crystal planes show obvious anisotropy,leading to the Raman-mechanical relationship dissimilarity on the different crystal planes.In this work,a general model of stress measurement on crystalline silicon with an arbitrary crystal plane was presented based on the elastic mechanics,the lattice dynamics and the Raman selection rule.The wavenumberstress factor that is determined by the proposed method is suitable for the measured crystal plane.Detailed examples for some specific crystal planes were provided and the theoretical results were verified by experiments.
基金the National Key Research and Development Program of China(Grant No.2018YFB0703500)the National Natural Science Foundation of China(Grant Nos.11827802,11772223,11772227,11890680,and 61727810)。
文摘With the application of strain engineering in microelectronics,complex stress states are introduced into advanced semiconductor devices.However,there is still a lack of effective metrology for the decoupling analysis of the complex stress states in semiconductor materials.This paper presents an investigation on the 2-axis stress component decoupling of{100}monocrystalline silicon(c-Si)by using oblique backscattering micro-Raman spectroscopy.A spectral-mechanical model was established,and two practicable methods for actual stress decoupling analyses were proposed.The verification experiments demonstrated the correctness and applicability of the methods proposed in this paper.
