Modifying the Power and Performance of 2-Dimensional MoS_(2)Field Effect Transistors

Over the past 60 years,the semiconductor industry has been the core driver for the development of information technology,contributing to the birth of integrated circuits,Internet,artificial intelligence,and Internet of Things.Semiconductor technology has been evolving in structure and material with co-optimization of performance–power–area–cost until the state-of-the-art sub-5-nm node.Two-dimensional(2D)semiconductors are recognized by the industry and academia as a hopeful solution to break through the quantum confinement for the future technology nodes.In the recent 10 years,the key issues on 2D semiconductors regarding material,processing,and integration have been overcome in sequence,making 2D semiconductors already on the verge of application.In this paper,the evolution of transistors is reviewed by outlining the potential of 2D semiconductors as a technological option beyond the scaled metal oxide semiconductor field-effect transistors.We mainly focus on the optimization strategies of mobility(μ),equivalent oxide thickness(EOT),and contact resistance(RC),which enables high ON current(Ion)with reduced driving voltage(Vdd).Finally,we prospect the semiconductor technology roadmap by summarizing the technological development of 2D semiconductors over the past decade.

Field-effect transistor memories based on ferroelectric polymers

Field-effect transistors based on ferroelectrics have attracted intensive interests, because of their non-volatile data retention, rewritability, and non-destructive read-out. In particular, polymeric materials that possess ferroelectric properties are promising for the fabrications of memory devices with high performance, low cost, and large-area manufacturing, by virtue of their good solubility, low-temperature processability, and good chemical stability. In this review, we discuss the material characteristics of ferroelectric polymers, providing an update on the current development of ferroelectric field-effect transistors（Fe-FETs） in non-volatile memory applications.