Patterned growth ofβ-Ga_(2)O_(3) thin films for solar-blind deep-ultraviolet photodetectors array and optical imaging application

Solar-blind deep-ultraviolet(DUV)photodetectors based on Ga_(2)O_(3)have attracted great attention due to their potential applications for many military and civil purposes.However,the development of device integration for optoelectronic system applications remains a huge challenge.Herein,we report a facile method for patterned-growth of high-qualityβ-Ga_(2)O_(3)thin films,which are assembled into a photodetectors array comprising 8×8 device units.A representative detector exhibits outstanding photoresponse performance,in terms of an ultra-low dark current of 0.62 pA,a large Ilight/Idark ratio exceeding 10^(4),a high responsivity of 0.72 A W^(-1) and a decent specific detectivity of 4.18×10^(11)Jones,upon 265 nm DUV illumination.What is more,the DUV/visible(250/400 nm)rejection ratio is as high as 10^(3) with a sharp response cut-off wave length at 280 nm.Further optoelectronic analysis reveals that the photodetectors array has good uniformity and repeatability,endowing it the capability to serve as a reliable DUV light image sensor with a decent spatial resolution.These results suggest that the proposed technique offers an effective avenue for patterned growth ofβ-Ga_(2)O_(3)thin films for multifunctional DUV optoelectronic applications.