The nano-patterned InGaN film was used in green InGaN/GaN multiple quantum wells(MQWs)structure,to relieve the unpleasantly existing mismatch between high indium content InGaN and GaN,as well as to enhance the light o...The nano-patterned InGaN film was used in green InGaN/GaN multiple quantum wells(MQWs)structure,to relieve the unpleasantly existing mismatch between high indium content InGaN and GaN,as well as to enhance the light output.The different self-assembled nano-masks were formed on InGaN by annealing thin Ni layers of different thicknesses.Whereafter,the InGaN films were etched into nano-patterned films.Compared with the green MQWs structure grown on untreated InGaN film,which on nano-patterned InGaN had better luminous performance.Among them the MQWs performed best when 3 nm thick Ni film was used as mask,because that optimally balanced the effects of nano-patterned InGaN on the crystal quality and the light output.展开更多
Pre-ohmic-annealing(POA)treatment of P-GaN/AlN/AlGaN epitaxy under N_(2)atmosphere was demonstrated to effectively achieve good p-type ohmic contact as well as decreased epitaxy sheet resistance.Ohmic contact resistan...Pre-ohmic-annealing(POA)treatment of P-GaN/AlN/AlGaN epitaxy under N_(2)atmosphere was demonstrated to effectively achieve good p-type ohmic contact as well as decreased epitaxy sheet resistance.Ohmic contact resistance(Rc)extracted by transfer length method reduced from 38 to 23Ω·mm with alleviated contact barrier height from 0.55 to 0.51 eV after POA treatment.X-ray photoelectron spectroscopy and Hall measurement confirmed that POA treatment was able to reduce surface state density and improve the hole concentration of p-GaN.Due to the decreased Rc and improved two-dimensional hole gas(2DHG)density,an outstanding-performance GaN E-mode p-channel MOSFET was successfully realized.展开更多
基金the National Natural Science Foundation of China(Grant No.62074120)the State Key Laboratory on Integrated Optoelectronics(Grant No.IOSKL2018KF10)the Fundamental Research Funds for the Central Universities(Grant No.JB211108).
文摘The nano-patterned InGaN film was used in green InGaN/GaN multiple quantum wells(MQWs)structure,to relieve the unpleasantly existing mismatch between high indium content InGaN and GaN,as well as to enhance the light output.The different self-assembled nano-masks were formed on InGaN by annealing thin Ni layers of different thicknesses.Whereafter,the InGaN films were etched into nano-patterned films.Compared with the green MQWs structure grown on untreated InGaN film,which on nano-patterned InGaN had better luminous performance.Among them the MQWs performed best when 3 nm thick Ni film was used as mask,because that optimally balanced the effects of nano-patterned InGaN on the crystal quality and the light output.
基金supported by the National Natural Science Foundation of China(62104185)the National Science Fund for Distinguished Young Scholars(61925404)+2 种基金the Fundamental Research Funds for the Central Universitiesthe Innovation Fund of Xidian Universitythe Wuhu and Xidian University Special Fund for Industry-University-Research Cooperation(XWYCXY-012021010)。
文摘Pre-ohmic-annealing(POA)treatment of P-GaN/AlN/AlGaN epitaxy under N_(2)atmosphere was demonstrated to effectively achieve good p-type ohmic contact as well as decreased epitaxy sheet resistance.Ohmic contact resistance(Rc)extracted by transfer length method reduced from 38 to 23Ω·mm with alleviated contact barrier height from 0.55 to 0.51 eV after POA treatment.X-ray photoelectron spectroscopy and Hall measurement confirmed that POA treatment was able to reduce surface state density and improve the hole concentration of p-GaN.Due to the decreased Rc and improved two-dimensional hole gas(2DHG)density,an outstanding-performance GaN E-mode p-channel MOSFET was successfully realized.
