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Spectral Characteristic of Phosgene in External Electric Field
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作者 huan an Mei Xiang +1 位作者 Bumaliya Abulimiti Jingyan Zhen 《Journal of Electronic Research and Application》 2022年第2期1-9,共9页
Phosgene is highly toxic, and it plays a role in the depletion of the ozone layer. The ground state geometric structure and spectral characteristic of phosgene in various external electric fields were calculated via t... Phosgene is highly toxic, and it plays a role in the depletion of the ozone layer. The ground state geometric structure and spectral characteristic of phosgene in various external electric fields were calculated via the density-functional theory (DFT) and time-dependent density-functional theory (TDDFT) with the B3LYP/6-31+G(d) basis set. With external electric field, the structure of phosgene changed significantly. With increasing electric field, the bond lengths of 1C-3Cl and 1C-4Cl increased;the total energy and energy gap initially increased and then decreased, whereas the dipole moment initially decreased and then increased. Most of the IR vibrational frequencies were redshifted. The wavelength of the singlet excited state increased, reflecting a red shift, and the oscillator strengths of most transitions belonged to forbidden transitions. These results are of great significance for studying the dissociation of phosgene in external electric field. 展开更多
关键词 Density-functional theory PHOSGENE Spectrum characteristic External electric field Molecular dynamics
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电化学刻蚀参数对高阻厚壁宏孔硅阵列表面形貌的影响
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作者 安欢 伍建春 +4 位作者 张仲 王欢 孙华 展长勇 邹宇 《材料研究学报》 EI CAS CSCD 北大核心 2019年第3期177-184,共8页
采用光电化学刻蚀方法,在电阻率为4~5 kΩ·cm的n-型[100]单晶硅片上制备了厚壁有序宏孔硅阵列。通过对比有限元法模拟诱导坑周围的电场分布,研究了刻蚀参数(电解液、光照、电压)对阵列表面形貌的影响。在刻蚀成孔的过程中,诱导坑... 采用光电化学刻蚀方法,在电阻率为4~5 kΩ·cm的n-型[100]单晶硅片上制备了厚壁有序宏孔硅阵列。通过对比有限元法模拟诱导坑周围的电场分布,研究了刻蚀参数(电解液、光照、电压)对阵列表面形貌的影响。在刻蚀成孔的过程中,诱导坑对孔的限制受电场分布和实验条件的共同影响,出现刻蚀偏离的现象。模拟结果显示,诱导坑上的电场强度沿着单晶硅的[100]和[110]晶向的分布。这种分布的结果是,随着光照强度的提高和刻蚀溶液表面自由能的降低刻蚀由原光刻图形的(110)面向(100)面偏离。提高刻蚀电压可抑制刻蚀偏离,有利于诱导坑快速刻蚀成孔,从而形成规整的厚壁宏孔硅阵列。 展开更多
关键词 无机非金属材料 宏孔硅阵列 光电化学刻蚀法 表面形貌 COMSOL multiphysics多物理场仿真软件
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