Engineering phonon transport in low-dimensional materials has great significance not only for fundamental research,but also for thermal management applications of electric devices.However,due to the difficulties of mi...Engineering phonon transport in low-dimensional materials has great significance not only for fundamental research,but also for thermal management applications of electric devices.However,due to the difficulties of micro and nano processing and characterization techniques,the work on tuning phonon transport at nanoscale are scarce.In this work,by introducing Ar+plasma,we probed the phonon transport in two-dimensional(2D)layered semiconductor PdSe_(2)under different defect concentrations.By using thermal bridge method,the thermal conductivity was measured to decrease by 50%after a certain Ar+irradiation,which implied a possible phase transition.Moreover,Raman characterizations were performed to show that the Raman sensitive peaks of PdSe_(2)was red-shifted and finally became disappeared with the increase of defect concentration.“Defect engineering”proves be a practical strategy in tuning the phonon thermal transport in low-dimensional materials,thus providing guidance for potential application in designing thermoelectric devices with various emerging materials.展开更多
Highly reliable and bendable dielectrics are desired in flexible or bendable electronic devices for future applications. Hexagonal boron nitride （h-BN） can be used as bendable dielectric due to its wide band gap. He...Highly reliable and bendable dielectrics are desired in flexible or bendable electronic devices for future applications. Hexagonal boron nitride （h-BN） can be used as bendable dielectric due to its wide band gap. Here, we fabricate high quality h-BN films with controllable thickness by a low pressure chemical vapor deposition method. We demonstrate a parallel-plate capacitor using h-BN film as the dielectric. The h-BN capacitors are reliable with a high breakdown field strength of -9.0 MV/cm. Tunneling current across the h-BN film is inversely exponential to the thickness of dielectric, which makes the capacitance drop significantly. The h-BN capacitor shows a best specific capacitance of 6.8 F/cm^2, which is one order of magnitude higher than the calculated value.展开更多
基金the National Natural Science Foundation of China(Grant No.12204244)the Natural Science Foundation of Jiangsu Province(Grant No.BK20210556)the Department of Science and Technology of Jiangsu Province(No.BK20220032).Y.S.Zhao acknowledges the support from the Jiangsu Specially-Appointed Professor Program.
文摘Engineering phonon transport in low-dimensional materials has great significance not only for fundamental research,but also for thermal management applications of electric devices.However,due to the difficulties of micro and nano processing and characterization techniques,the work on tuning phonon transport at nanoscale are scarce.In this work,by introducing Ar+plasma,we probed the phonon transport in two-dimensional(2D)layered semiconductor PdSe_(2)under different defect concentrations.By using thermal bridge method,the thermal conductivity was measured to decrease by 50%after a certain Ar+irradiation,which implied a possible phase transition.Moreover,Raman characterizations were performed to show that the Raman sensitive peaks of PdSe_(2)was red-shifted and finally became disappeared with the increase of defect concentration.“Defect engineering”proves be a practical strategy in tuning the phonon thermal transport in low-dimensional materials,thus providing guidance for potential application in designing thermoelectric devices with various emerging materials.
基金This work was supported by the National Natural Science Foundation of China （No. 51172122）, the Foundation for the Author of National Excellent Doctoral Dissertation （No. 2007B37） and the Program for New Century Excellent Talents in University, the Tsinghua University Initiative Scientific Research Pro-gram （No. 20111080939）, and the China Postdoctoral Science Foundation （No. 2011M500310）. We thank Prof. Yonggang Zhao and Dr. Xingli Jiang for their help in testing the capacitors.
文摘Highly reliable and bendable dielectrics are desired in flexible or bendable electronic devices for future applications. Hexagonal boron nitride （h-BN） can be used as bendable dielectric due to its wide band gap. Here, we fabricate high quality h-BN films with controllable thickness by a low pressure chemical vapor deposition method. We demonstrate a parallel-plate capacitor using h-BN film as the dielectric. The h-BN capacitors are reliable with a high breakdown field strength of -9.0 MV/cm. Tunneling current across the h-BN film is inversely exponential to the thickness of dielectric, which makes the capacitance drop significantly. The h-BN capacitor shows a best specific capacitance of 6.8 F/cm^2, which is one order of magnitude higher than the calculated value.
