High-quality and large-scale growth of monolayer molybdenum disulfide(MoS2)has caught intensive attention because of its potential in many applications due to unique electronic properties.Here,we report the wafer-scal...High-quality and large-scale growth of monolayer molybdenum disulfide(MoS2)has caught intensive attention because of its potential in many applications due to unique electronic properties.Here,we report the wafer-scale growth of high-quality mono layer MoS2 on singlecrystalline sapphire and also on SiO2 substrates by a facile metal-organic chemical vapor deposit!on(MOCVD)method.Prior to growth,an aqueous solution of sodium molybdate(Na2MoO4)is spun onto the substrates as the molybdenum precursor and diethyl sulfide((C2H5)2S)is used as the sulfur precursor duri ng the growth.The grown MoS2 films exhibit crystal I i nity,good electrical performa nee(electro n mobility of 22 cm2·V^-1·s^-1)and structural continuity maintained over the entire wafer.The sapphire substrates are reusable for subsequent growth.The same method is applied for the synthesis of tungsten disulfide(WS2).Our work provides a facile,reproducible and cost-efficient method for the scalable fabricati on of high-quality mono layer MoS2 for versatile applicati ons,such as electro nic and optoelectr onic devices as well as the membranes for desalination and power generation.展开更多
文摘High-quality and large-scale growth of monolayer molybdenum disulfide(MoS2)has caught intensive attention because of its potential in many applications due to unique electronic properties.Here,we report the wafer-scale growth of high-quality mono layer MoS2 on singlecrystalline sapphire and also on SiO2 substrates by a facile metal-organic chemical vapor deposit!on(MOCVD)method.Prior to growth,an aqueous solution of sodium molybdate(Na2MoO4)is spun onto the substrates as the molybdenum precursor and diethyl sulfide((C2H5)2S)is used as the sulfur precursor duri ng the growth.The grown MoS2 films exhibit crystal I i nity,good electrical performa nee(electro n mobility of 22 cm2·V^-1·s^-1)and structural continuity maintained over the entire wafer.The sapphire substrates are reusable for subsequent growth.The same method is applied for the synthesis of tungsten disulfide(WS2).Our work provides a facile,reproducible and cost-efficient method for the scalable fabricati on of high-quality mono layer MoS2 for versatile applicati ons,such as electro nic and optoelectr onic devices as well as the membranes for desalination and power generation.
