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Top priority current path between SiC particles during ultra-high temperature flash sintering: Presence of PyC “bridges”
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作者 Le Lu Tianlong liu +5 位作者 Zhaofeng Chen Fei Wang Mengmeng Yang Qiong Wu lixia Yang huanyong li 《Journal of Advanced Ceramics》 SCIE EI CAS CSCD 2024年第2期255-262,共8页
Flash sintering(FS)is a novel technique for rapidly densifying silicon carbide(SiC)ceramics.This work achieved a rapid sintering of SiC ceramics by the utilization of ultra-high temperature flash sintering within 60 s... Flash sintering(FS)is a novel technique for rapidly densifying silicon carbide(SiC)ceramics.This work achieved a rapid sintering of SiC ceramics by the utilization of ultra-high temperature flash sintering within 60 s.Pyrolysis carbon(PyC)“bridges”were constructed between SiC particles through the carbonisation of phenolic resin,providing a large number of current channels.The incubation time of the flash sintering process was significantly reduced,and the sintering difference between the centre and the edge regions of the ceramics was minimized,with an average particle size of the centre region and edge region being 12.31 and 9.02μm,respectively.The results showed that the porosity of the SiC ceramics after the flash sintering was reduced to 14.79% with PyC“bridges”introduced,and the Vickers hardness reached 19.62 GPa.PyC“bridges”gradually evolved from amorphous eddy current carbon to oriented graphite carbon,indicating that the ultra-high temperature environment in which the sample was located during the flash sintering was successfully constructed.Ultra-high temperature flash sintering of SiC is expected to be applied to the local repair of matrix damage in SiC ceramic matrix composites. 展开更多
关键词 silicon carbide(SiC) flash sintering(FS) pyrolytic carbon(PyC)"bridges" current path instantaneous
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金属-Bi_(2)OS_(2)界面肖特基势垒以及电荷转移机制研究
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作者 张晓东 冯丽萍 +7 位作者 钟诗宸 叶元茗 潘海曦 刘鹏飞 郑孝奇 李焕勇 屈铭洋 王锡桐 《Science China Materials》 SCIE EI CAS CSCD 2023年第2期811-818,共8页
由于金属与二维半导体接触界面复杂的电荷转移,界面处经常会产生强烈的费米钉扎效应.本文以Bi_(2)OS_(2)(拥有目前二维半导体材料中已知的最高电子迁移率)作为二维沟道层,采用密度泛函理论系统地计算了其与金属电极接触界面的肖特基势... 由于金属与二维半导体接触界面复杂的电荷转移,界面处经常会产生强烈的费米钉扎效应.本文以Bi_(2)OS_(2)(拥有目前二维半导体材料中已知的最高电子迁移率)作为二维沟道层,采用密度泛函理论系统地计算了其与金属电极接触界面的肖特基势垒以及界面电荷转移机制.当Bi_(2)OS_(2)与三维金属电极接触时,界面强的电荷转移主要由化学键的形成以及泡利电荷排斥作用引起,导致界面具有强的费米钉扎,并且由这两个原因引起的电荷转移方向相反.此外,当金属的功函数大于半导体的电离能或小于半导体的电子亲合能时,界面会产生一个额外的电荷转移.当Bi_(2)OS_(2)与二维金属电极接触时,界面的费米钉扎完全被抑制,界面遵循肖特基-莫特定律,这是因为本文所选用的二维金属电极能够有效地屏蔽泡利电荷排斥作用.因此,通过选择不同功函数的二维金属电极,能够宽范围、线性地调节界面的肖特基势垒高度,并且能够实现界面从n型欧姆接触到p型欧姆接触的转变.这项研究不仅为Bi_(2)OS_(2)基器件的电极选择提供了理论指导,还能够增强对金属与二维半导体接触界面相互作用机制的理解. 展开更多
关键词 肖特基势垒 功函数 欧姆接触 金属电极 电荷转移 接触界面 排斥作用 电子亲合能
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