In-doping collaboratively controlling back interface and bulk defects to achieve efficient flexible CZTSSe solar cells

Focusing on the low open circuit voltage(V_(OC))and fill factor(FF)in flexible Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)solar cells,indium(In)ions are introduced into the CZTSSe absorbers near Mo foils to modify the back interface and passivate deep level defects in CZTSSe bulk concurrently for improving the performance of flexible device.The results show that In doping effectively inhibits the formation of secondary phase(Cu(S,Se)_(2))and VSndefects.Further studies demonstrate that the barrier height at the back interface is decreased and the deep level defects(Cu_(Sn)defects)in CZTSSe bulk are passivated.Moreover,the carrier concentration is increased and the V_(OC) deficit(V_(OC,def))is decreased significantly due to In doping.Finally,the flexible CZTSSe solar cell with 10.01%power conversion efficiency(PCE)has been obtained.The synergistic strategy of interface modification and bulk defects passivation through In incorporation provides a new thought for the fabrication of efficient flexible kesterite-based solar cells.

Micro-mechanism study of the effect of Cd-free buffer layers ZnxO(x = Mg/Sn) on the performance of flexible Cu2ZnSn(S, Se)4 solar cell

The traditional CdS buffer layers in flexible CZTSSe solar cells lead to light absorption losses and environmental pollution problems. Therefore, the study of Cd-free buffer layer is very important for the realization of environmentally friendly and efficient CZTSSe solar cells. The Zn1-xMgxO(ZnMgO) and Zn1-xSnxO(ZnSnO) alternate buffer layers are studied in this study using the simulation package solar cell capacitance simulator(SCAPS-1D) numerical simulation model, and the theoretical analysis is further verified by the results of the experiments. We simulate the performance of CZTSSe/ZnXO(X = Mg/Sn) heterojunction devices with different Mg/(Zn+Mg) and Sn/(Zn+Sn) ratios and analyze the intrinsic mechanism of the effect of conduction band offsets(CBO) on the device performance. The simulation results show that the CZTSSe/ZnXO(X = Mg/Sn) devices achieve optimal performance with a small “spike” band or “flat” band at Mg and Sn doping concentrations of 0.1 and 0.2, respectively. To investigate the potential of Zn_(0.9)Mg_(0.1O) and Zn_(0.8)Sn_(0.2)O as alternative buffer layers, carrier concentrations and thicknesses are analyzed. The simulation demonstrates that the Zn0.9Mg0.1O device with low carrier concentration has a high resistivity, serious carrier recombination, and a greater impact on performance from thickness variation. Numerical simulations and experimental results show the potential of the ZnSnO buffer layer as an alternative to toxic CdS, and the ZnMgO layer has the limitation as a substitute buffer layer. This paper provides the theoretical basis and experimental proof for further searching for a suitable flexible CZTSSe Cd-free buffer layer.

Reverse Osmosis Performance in MBR-RO Process with Recirculation of RO Concentrate to MBR for Water Reclamation

An integrated membrane system, membrane bioreactor-reverse osmosis (MBR-RO), has become highly efficient in producing high-quality water for municipal wastewater reclamation. However, disposal of a highly concentrated waste stream (RO concentrate or RO retentate) generated in this combination is an important issue. This work investigated RO behaviour in an integrated pilot scale MBR-RO system for municipal wastewater reuse with the continuous recycling of RO retentate to the MBR influent. RO membrane retention and the fouling propensity were studied. RO concentrate, produced by the RO process at a fixed concentration factor (CF) of 3, was recycled continuously to the MBR, leading to water recovery of the entire process around 92%. Osmotic pressure model, saturation index method, high performance liquid chromatography equipped with size exclusion column (HPLC-SEC) and specific filtration test were used to analyse the fouling potential of the RO membrane. The results obtained showed that even though RO concentrate recycling changed remarkably, the compositions of both MBR permeate and RO concentrate, the quality of RO permeate remained almost constant in terms of organic matters, conductivity, and ionic salts. However, these high concentrations of organic or inorganic substances in RO concentrate were major factors leading to the RO membrane fouling. Before RO concentrate recycling, a decline of approximately 30% of the initial RO permeate flux was observed in the period when the CF was increasing to 3, mainly due to the osmotic pressure effect of retained ions and the deposits of organic matters at the RO membrane surface. After RO concentrate addition to the MBR, due to the continuous accumulation of ionic salts on the RO membrane surface, a gradual reduction in RO permeate flux (additional 19%) was also mainly attributed to the osmotic pressure effect of the retained ions. These observations showed that the continuous addition of RO concentrate to the MBR was successful in a combined MBR and RO process in terms of the excellent quality of RO permeate.

Distributed Alternating Direction Method of Multipliers for Multi-Objective Optimization

In this paper, a distributed algorithm is proposed to solve a kind of multi-objective optimization problem based on the alternating direction method of multipliers. Compared with the centralized algorithms, this algorithm does not need a central node. Therefore, it has the characteristics of low communication burden and high privacy. In addition, numerical experiments are provided to validate the effectiveness of the proposed algorithm.

全面拥抱数字经济 建设一流数字财经大学

党的十八大以来,以习近平同志为核心的党中央深刻洞察数字经济发展趋势和规律,出台一系列重大政策、作出一系列战略部署,推动我国数字经济发展取得显著成就,为经济社会高质量发展注入强劲动能。习近平总书记多次就发展数字经济发表重要讲话,科学回答了为什么要发展数字经济、怎样发展数字经济的重大理论和实践问题,为中国数字经济发展指明了前进方向、提供了根本遵循。

Low-Dimensional Halide Perovskites and Their Advanced Optoelectronic Applications

Metal halide perovskites are crystalline materials originally developed out of scientific curiosity. They have shown great potential as active materials in optoelectronic applications. In the last 6 years, their certified photovoltaic efficiencies have reached 22.1%. Compared to bulk halide perovskites, low-dimensional ones exhibited novel physical properties. The photoluminescence quantum yields of perovskite quantum dots are close to 100%. The external quantum efficiencies and current efficiencies of perovskite quantum dot light-emitting diodes have reached 8% and 43 cd A^(-1),respectively, and their nanowire lasers show ultralow-threshold room-temperature lasing with emission tunability and ease of synthesis. Perovskite nanowire photodetectors reached a responsivity of 10 A W^(-1)and a specific normalized detectivity of the order of 10^(12 )Jones. Different from most reported reviews focusing on photovoltaic applications, we summarize the rapid progress in the study of low-dimensional perovskite materials, as well as their promising applications in optoelectronic devices. In particular, we review the wide tunability of fabrication methods and the state-of-the-art research outputs of low-dimensional perovskite optoelectronic devices. Finally, the anticipated challenges and potential for this exciting research are proposed.

Enhancing carrier transport in flexible CZTSSe solar cells via doping Li strategy

The passivation of non-radiative states and inhibition of band tailings are desirable for improving the open-circuit voltage(V_(oc))of CZTSSe thin-film solar cells.Recently,alkali metal doping has been investigated to passivate defects in CZTSSe films.Herein,we investigate Li doping effects by applying Li OH into CZTSSe precursor solutions,and verify that carrier transport is enhanced in the CZTSSe solar cells.Systematic characterizations demonstrate that Li doping can effectively passivate non-radiative recombination centers and reduce band tailings of the CZTSSe films,leading to the decrease in total defect density and the increase in separation distance between donor and acceptor.Fewer free carriers are trapped in the band tail states,which speeds up carrier transport and reduces the probability of deep-level defects capturing carriers.The charge recombination lifetime is about twice as long as that of the undoped CZTSSe device,implying the heterojunction interface recombination is also inhibited.Besides,Li doping can increase carrier concentration and enhance build-in voltage,leading to a better carrier collection.By adjusting the Li/(Li+Cu)ratio to 18%,the solar cell efficiency is increased significantly to 9.68%with the fill factor(FF)of 65.94%,which is the highest FF reported so far for the flexible CZTSSe solar cells.The increased efficiency is mainly attributed to the reduction of V_(oc)deficit and the improved CZTSSe/Cd S junction quality.These results open up a simple route to passivate non-radiative states and reduce the band tailings of the CZTSSe films and improve the efficiency of the flexible CZTSSe solar cells.

A 9% efficiency of flexible Mo-foil-based Cu2ZnSn(S,Se)4 solar cells by improving CdS buffer layer and heterojunction interface

Flexible Cu2ZnSn(S,Se)4(CZTSSe)solar cells show great potential applications due to low-cost,nontoxicity,and stability.The device performances under an especial open circuit voltage(VOC)are limited by the defect recombination of CZTSSe/CdS heterojunction interface.We improve the deposition technique to obtain compact CdS layers without any pinholes for flexible CZTSSe solar cells on Mo foils.The efficiency of the device is improved from 5.7%to 6.86%by highquality junction interface.Furthermore,aiming at the S loss of CdS film,the S source concentration in deposition process is investigated to passivate the defects and improve the CdS film quality.The flexible Mo-foil-based CZTSSe solar cells are obtained to possess a 9.05%efficiency with a VOC of 0.44 V at an optimized S source concentration of 0.68 mol/L.Systematic physical measurements indicate that the S source control can effectively suppress the interface recombination and reduce the VOCdeficit.For the CZTSSe device bending characteristics,the device efficiency is almost constant after1000 bends,manifesting that the CZTSSe device has an excellent mechanical flexibility.The effective improvement strategy of CdS deposition is expected to provide a new perspective for promoting the conversion efficiency of CZTSSe solar cells.

Hydroiodic Acid Additive Enhanced the Performance and Stability of PbS-QDs Solar Cells via Suppressing Hydroxyl Ligand

The recent emerging progress of quantum dot ink(QD-ink)has overcome the complexity of multiple-step colloidal QD(CQD)film preparation and pronouncedly promoted the device performance.However,the detrimental hydroxyl(OH)ligands induced from synthesis procedure have not been completely removed.Here,a halide ligand additive strategy was devised to optimize QD-ink process.It simultaneously reduced sub-bandgap states and converted them into iodide-passivated surface,which increase carrier mobility of the QDs films and achieve thicker absorber with improved performances.The corresponding power conversion efficiency of this optimized device reached 10.78%.(The control device was 9.56%.)Therefore,this stratege can support as a candidate strategy to solve the QD original limitation caused by hydroxyl ligands,which is also compatible with other CQD-based optoelectronic devices.

Rapid subsurface damage detection of SiC using inductivity coupled plasma

This paper proposes a method for the rapid detection of subsurface damage(SSD)of Si C using atmospheric inductivity coupled plasma.As a plasma etching method operated at ambient pressure with no bias voltage,this method does not introduce any new SSD to the substrate.Plasma diagnosis and simulation are used to optimize the detection operation.Assisted by an Si C cover,a taper can be etched on the substrate with a high material removal rate.Confocal laser scanning microscopy and scanning electron microscope are used to analyze the etching results,and scanning transmission electron microscope(STEM)is adopted to confirm the accuracy of this method.The STEM result also indicates that etching does not introduce any SSD,and the thoroughly etched surface is a perfectly single crystal.A rapid SSD screening ability is also demonstrated,showing that this method is a promising approach for the rapid detection of SSD.

Cavity-induced ATS effect on a superconducting Xmon qubit

We couple a ladder-type three-level superconducting artificial atom to a cavity. Adjusting the artificial atom to make the cavity be resonant with the two upper levels, we then probe the lower two levels of the artificial atom. When driving the cavity to a coherent state, the probe spectrum shows energy level splitting induced by the quantized electromagnetic field in the cavity. This splitting size is related to the coupling strength between the cavity and the artificial atom and, thus, is fixed after the sample is fabricated. This is in contrast to the classical Autler-Townes splitting of a three-level system in which the splitting is proportional to the driving amplitude, which can be continuously changed. Our experiment results show the difference between the classical microwave driving field and the quantum field of the cavity.

Realization of High-Fidelity Controlled-Phase Gates in Extensible Superconducting Qubits Design with a Tunable Coupler

High-fidelity two-qubit gates are essential for the realization of large-scale quantum computation and simulation.Tunable coupler design is used to reduce the problem of parasitic coupling and frequency crowding in manyqubit systems and thus thought to be advantageous. Here we design an extensible 5-qubit system in which center transmon qubit can couple to every four near-neighboring qubits via a capacitive tunable coupler and experimentally demonstrate high-fidelity controlled-phase(CZ) gate by manipulating central qubit and one nearneighboring qubit. Speckle purity benchmarking and cross entropy benchmarking are used to assess the purity fidelity and the fidelity of the CZ gate. The average purity fidelity of the CZ gate is 99.69±0.04% and the average fidelity of the CZ gate is 99.65±0.04%, which means that the control error is about 0.04%. Our work is helpful for resolving many challenges in implementation of large-scale quantum systems.

Characterizing motion types of G-band bright points in the quiet Sun

We study the motion of G-band bright points （GBPs） in the quiet Sun to obtain the characteristics of different motion types. A high resolution image sequence taken with the Hinode/Solar Optical Telescope （SOT） is used, and GBPs are automat- ically tracked by segmenting 3D evolutional structures in a space-time cube. After putting the GBPs that do not move during their lifetimes aside, the non-stationary GBPs are categorized into three types based on an index of their motion type. Most GBPs that move in straight or nearly straight lines are categorized as a straight mo- tion type, a few moving in rotary paths into rotary motion, and the others fall into a motion type we called erratic. The mean horizontal velocities are 2.18±0.08 km s-1, 1.63±0.09km s^-1 and 1.33±0.07 km s^-1 for straight, erratic and rotary motion types, respectively. We find that a GBP drifts at a higher and constant velocity during its whole life if it moves in a straight line. However, it has a lower and variational velocity if it moves on a rotary path. The diffusive process is ballistic-, super- and sub-diffusion for straight, erratic and rotary motion types, respectively. The corresponding diffusion index （γ） and coefficients （K） are 2.13±0.09 and 850±37km^2 s^-1, 1.82±0.07 and 331 ±24 km^2 s^-1, and 0.73±0.19 and 13±9 km^2 s^-1. In terms of direction of motion, it is homogeneous and isotropic, and usually persists between neighboring frames, no matter what motion type a GBP is classified as.

Polishing and planarization of single crystal diamonds: state-of-the-art and perspectives

Diamond is a promising material for the modern industry. It is widely used in different applications, such as cutting tools, optical windows, heat dissipation, and semiconductors.However, these application areas require exceptionally flattened and polished diamond surfaces.Unfortunately, due to the extreme hardness and chemical inertness of diamond, the polishing of diamond is challenging. Since the 1920s, various conventional and modern mechanical,chemical, and thermal polishing techniques have been proposed and developed for finishing diamond surfaces. Therefore, to impart proper guidance on selecting a good polishing technique for production practice, this paper presents an in-depth and informative literature survey of the current research and engineering developments regarding diamond polishing. At first, a brief review of the general developments and basic material removal principles is discussed. This review concludes with a detailed analysis of each techniques' polishing performance and critical challenges, and a discussion of the new insights and future applications of diamond polishing.

Evolution of isolated G-band bright points: size, intensity and velocity

We study the evolution pattern of isolated G-band bright points （GBPs） in terms of their size, intensity and velocity. Using a high resolution image sequence taken with the Hinode/Solar Optical Telescope （SOT）, we detect GBPs in each image by the Laplacian and Morphological Dilation algorithm, and track their evolutions by a 26-adjacent method in a three-dimensional space-time cube. For quantifying the evolution, we propose a quantification method based on lifetime normalization which aligns the different lifetimes to common stages. The quantification results show that, on average, the diameter of isolated GBPs changes from 166 to 173 km, then down to 165 km; the maximum intensity contrast changes from 1.012 to 1.027, then down to 1.011; however, the velocity changes from 1.709 to 1.593 km s-1, then up to 1.703 km s-i. The results indicate that the evolution follows a pattern such that the GBP is small, faint and fast-moving at the birth stage, becomes big, bright and slow-moving at the middle stage, then gets small, faint and fast-moving at the decay stage until disappearance. Although the differences are very small, a two-sample t-test is used to demonstrate there are significant differences in means between the distri- butions of the different stages. Furthermore, we quantify the relationship between the lifetimes of GBPs and their properties. It is found that there are positive correlations between the lifetimes and their sizes and intensities with correlation coefficients of 0.83 and 0.65, respectively; however, there is a negative correlation between the life- times and velocities with a correlation coefficient of-0.49. In summary, the longer the GBP persists, the bigger, brighter and slower it will be.

Investigation of intergranular bright points from the New Vacuum Solar Telescope

Six high-resolution TiO-band image sequences from the New Vacuum Solar Telescope （NVST） are used to investigate the properties of intergranular bright points （igBPs）. We detect the igBPs using a Laplacian and morphological dilation algorithm （LMD） and automatically track them using a three- dimensional segmentation algorithm, and then investigate the morphologic, photometric and dynamic prop- erties of igBPs in terms of equivalent diameter, intensity contrast, lifetime, horizontal velocity, diffusion index, motion range and motion type. The statistical results confirm previous studies based on G-band or TiO-band igBPs from other telescopes. These results illustrate that TiO data from the NVST are stable and reliable, and are suitable for studying igBPs. In addition, our method is feasible for detecting and track- ing igBPs with TiO data from the NVST. With the aid of vector magnetograms obtained from the Solar Dynamics Observatory/Helioseismic and Magnetic Imager, the properties of igBPs are found to be strongly influenced by their embedded magnetic environments. The areal coverage, size and intensity contrast values of igBPs are generally larger in regions with higher magnetic flux. However, the dynamics of igBPs, includ- ing the horizontal velocity, diffusion index, ratio of motion range and index of motion type are generally larger in the regions with lower magnetic flux. This suggests that the absence of strong magnetic fields in the medium makes it possible for the igBPs to look smaller and weaker, diffuse faster, and move faster and further along a straighter path.

制造发展的三个范式:制造发展规律的研究

基于对人类社会发展历史和科学技术发展内在规律的认识,本文详细分析了制造发展的三个范式,论证了原子及近原子尺度制造是制造范式III的核心使能技术。文章回顾了国内外各机构对原子级制造研发规划现状,指出我国目前处于原子级制造技术发展的重要战略机遇期,并从设计、材料、加工和检测等角度分析了原子级制造的技术体系内涵;梳理了原子级表面制造、原子级结构制造、原子级测量与表征等领域的研究进展,呈现了当前具有原子级制造能力的部分代表性技术,包括原子级切削、原子级抛光、电化学加工、等离子体原子级加工技术、原子精准操控以及原子分辨测量与表征技术,并对原子级制造战略规划提出发展建议。

原子层制造的研究现状与科学挑战

原子层制造是指加工精度达到原子层量级的可控制造技术,包括原子层去除、添加、迁移等。针对信息、能源、航空航天等领域核心零部件超高性能构建的发展需求,通过原子层可控去除制造全频段原子级精度无损表面,并结合原子层增材制造原子级新结构,有望实现特殊功能的有效创成,保证超高性能的安全可靠。另外,后摩尔时代先进芯片的制造工艺将迈入亚纳米物理极限,原子层制造需求贯穿芯片制造工艺的全流程。本文阐述了原子层制造技术的发展需求与研究进展,围绕原子层抛光、原子层沉积/刻蚀、原子层损伤控制、原子层工艺与装备等领域,梳理了原子层制造的发展方向及研究目标,凝练了原子层制造领域未来的关键科学问题及面临的挑战,探讨了前沿研究方向和发展战略。

原子精度制造新原理和新方法

目前航空航天、核物理、微电子、光电子和半导体等国家战略领域高性能装备的性能需求日渐严苛,核心零部件的制造精度必须迈进原子级水平,亟需研究原子精度的高性能制造新原理和新方法。本文归纳并提出了目前迫切需求的原子级表面精度、原子级结构精度、原子级损伤控制以及原子级特征尺寸结构创成四大原子精度制造核心能力,从能场辅助原子级切削、多能场辅助原子有序排布、表面能弱化原子精度材料去除以及超光学衍射极限的原子精度制造四大方向进行系统梳理,介绍了面向不同应用场景的原子精度制造新原理和新方法的研究现状,并概述了各类方法的优势和缺点,从中提炼出多能场耦合条件下的能量和原子间相互作用机理这一关键科学问题,并从四大方向上对未来我国原子级制造的基础研究提出了建议。