Silver nanowire（AgNW） networks have been demonstrated to exhibit superior transparent and conductive performance over that of indium-doped tin oxide（ITO） and have been proposed to replace ITO, which is currently w...Silver nanowire（AgNW） networks have been demonstrated to exhibit superior transparent and conductive performance over that of indium-doped tin oxide（ITO） and have been proposed to replace ITO, which is currently widely used in optoelectronic devices despite the scarcity of indium on Earth. In this paper, the current spreading and enhanced transmittance induced by AgNWs, which are two important factors influencing the light output power, were analyzed. The enhanced transmittance was studied by finite-difference time-domain simulation and verified by cathodoluminescence measurements.The enhancement ratio of the light output power decreased as the Ga P layer thickness increased, with enhancement ratio values of 79%, 52%, and 15% for Ga P layer thicknesses of 0.5 μm, 1 μm, and 8 μm, respectively, when an AgNW network was included in Al Ga In P light-emitting diodes. This was because of the decreased current distribution tunability of the AgNW network with the increase of the Ga P layer thickness. The large enhancement of the light output power was caused by the AgNWs increasing carrier spread out of the electrode and the enhanced transmittance induced by the plasmonic AgNWs. Further decreasing the sheet resistance of AgNW networks could raise their light output power enhancement ratio.展开更多
基金Project supported by the National Key Research and Development Program of China(Grant No.2016YFB0400603)the National Natural Science Foundation of China(Grant No.61335004)
文摘Silver nanowire（AgNW） networks have been demonstrated to exhibit superior transparent and conductive performance over that of indium-doped tin oxide（ITO） and have been proposed to replace ITO, which is currently widely used in optoelectronic devices despite the scarcity of indium on Earth. In this paper, the current spreading and enhanced transmittance induced by AgNWs, which are two important factors influencing the light output power, were analyzed. The enhanced transmittance was studied by finite-difference time-domain simulation and verified by cathodoluminescence measurements.The enhancement ratio of the light output power decreased as the Ga P layer thickness increased, with enhancement ratio values of 79%, 52%, and 15% for Ga P layer thicknesses of 0.5 μm, 1 μm, and 8 μm, respectively, when an AgNW network was included in Al Ga In P light-emitting diodes. This was because of the decreased current distribution tunability of the AgNW network with the increase of the Ga P layer thickness. The large enhancement of the light output power was caused by the AgNWs increasing carrier spread out of the electrode and the enhanced transmittance induced by the plasmonic AgNWs. Further decreasing the sheet resistance of AgNW networks could raise their light output power enhancement ratio.
