Systematic investigation of InAs quantum dot(QD) growth using molecular beam epitaxy has been carried out, focusing mainly on the InAs growth rate and its effects on the quality of the InAs/GaAs quantum dots.By optimi...Systematic investigation of InAs quantum dot(QD) growth using molecular beam epitaxy has been carried out, focusing mainly on the InAs growth rate and its effects on the quality of the InAs/GaAs quantum dots.By optimizing the growth rate, high quality InAs/GaAs quantum dots have been achieved.The areal quantum dot density is 5.9× 1010 cm-2, almost double the conventional density(3.0 × 1010 cm-2).Meanwhile, the linewidth is reduced to 29 meV at room temperature without changing the areal dot density.These improved QDs are of great significance for fabricating high performance quantum dot lasers on various substrates.展开更多
Here we report 1.3μm electrical injection lasers based on InAs/GaAs quantum dots(QDs)grown on a GaAs substrate,which can steadily work at 110-℃without visible degradation.The QD structure is designed by applying the...Here we report 1.3μm electrical injection lasers based on InAs/GaAs quantum dots(QDs)grown on a GaAs substrate,which can steadily work at 110-℃without visible degradation.The QD structure is designed by applying the Stranski-Krastanow growth mode in solid source molecular beam epitaxy.The density of InAs QDs in the active region is increased from 3.8×10^(10)cm^(-2)to 5.9×10^(10)cm^(-2).As regards laser performance,the maximum output power of devices with lowdensity QDs as the active region is 65 m W at room temperature,and that of devices with the high-density QDs is 103 mW.Meanwhile the output power of high-density devices is 131 mW under an injection current of 4 A at 110-℃.展开更多
基金Project supported by the National Key Technology Research and Development Program of China(Grant No.2018YFA0306101)the National Natural Science Foundation of China(Grant No.61505196)+1 种基金the Scientific Instrument Developing Project of the Chinese Academy of Sciences(Grant No.YJKYYQ20170032)the Guangdong Science and Technology Project,China(Grant No.20180329)
文摘Systematic investigation of InAs quantum dot(QD) growth using molecular beam epitaxy has been carried out, focusing mainly on the InAs growth rate and its effects on the quality of the InAs/GaAs quantum dots.By optimizing the growth rate, high quality InAs/GaAs quantum dots have been achieved.The areal quantum dot density is 5.9× 1010 cm-2, almost double the conventional density(3.0 × 1010 cm-2).Meanwhile, the linewidth is reduced to 29 meV at room temperature without changing the areal dot density.These improved QDs are of great significance for fabricating high performance quantum dot lasers on various substrates.
基金the Science and Technology Program of Guangzhou(Grant No.202103030001)the KeyArea Research and Development Program of Guangdong Province(Grant No.2018B030329001)+8 种基金the National Natural Science Foundation of China(Grant Nos.62035017,61505196,and 62204238)the Scientific Instrument Developing Project of the Chinese Academy of Sciences(Grant No.YJKYYQ20170032)the Major Program of the National Natural Science Foundation of China(Grant Nos.61790580 and 61790581)the Chinese Academy of Sciences and Changchun City Science and Technology Innovation Cooperation Project(Grant No.21SH06)Jincheng Key Research and Development Project(Grant No.20210209)the Key R&D Program of Shanxi Province(Grant No.202102030201004)the R&D Program of Guangdong Province(Grant Nos.2018B030329001 and2020B0303020001)Shenzhen Technology Research Project(Grant No.JSGG20201102145200001)the National Key Technologies R&D Program of China(Grant No.2018YFA0306100)。
文摘Here we report 1.3μm electrical injection lasers based on InAs/GaAs quantum dots(QDs)grown on a GaAs substrate,which can steadily work at 110-℃without visible degradation.The QD structure is designed by applying the Stranski-Krastanow growth mode in solid source molecular beam epitaxy.The density of InAs QDs in the active region is increased from 3.8×10^(10)cm^(-2)to 5.9×10^(10)cm^(-2).As regards laser performance,the maximum output power of devices with lowdensity QDs as the active region is 65 m W at room temperature,and that of devices with the high-density QDs is 103 mW.Meanwhile the output power of high-density devices is 131 mW under an injection current of 4 A at 110-℃.
