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Recent Progress in Ferroelectric Diodes: Explorations in Switchable Diode Effect
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作者 Chen Ge Can Wang +2 位作者 Kui-juan Jin hui-bin lu Guo-zhen Yang 《Nano-Micro Letters》 SCIE EI CAS 2013年第2期81-87,共7页
Switchable diode effect in ferroelectric diodes has attracted much attention for its potential applications in novel nonvolatile memories. We briefly review recent investigations on the switchable diode effect in ferr... Switchable diode effect in ferroelectric diodes has attracted much attention for its potential applications in novel nonvolatile memories. We briefly review recent investigations on the switchable diode effect in ferroelectric diodes both experimentally and theoretically. Many recent studies demonstrate that the interfacial barrier between the metal-ferroelectrics could be modulated by the polarization charges, and the ferroelectric polarization that can be reversed by an external electric field plays a dominant role in the switchable diode effect. Moreover, we review a self-consistent numerical model, which can well describe the switchable diode effect in ferroelectric diodes. Based on this model, it can be predicted that it is a better choice to select metals with a smaller permittivity, such as noble metals, to obtain a more pronounced switchable diode effect in ferroelectric diodes. 展开更多
关键词 Ferroelectric diodes Switchable diode effect Metal/ferroelectrics/metal structure Self-consistent mode
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