Based on conventional metal-oxide-semiconductor field-effect transistor (MOSFET),a novel kind of chemical field-effect transistor (ChemFET) gas sensor array has been designed and fabricated.The obtained sensor consist...Based on conventional metal-oxide-semiconductor field-effect transistor (MOSFET),a novel kind of chemical field-effect transistor (ChemFET) gas sensor array has been designed and fabricated.The obtained sensor consists of self-assembly polyaniline (PAN) composite film containing poly(acrylic acid) (PAA) which was used as gate material of MOSFET instead of conventional metallic gate.The UV-Vis absorption spectra of PAN/PAA films were characterized.The NO_2 gas sensitive property of the ChemFET sensor array was also investigated.Results show that the drain current of devices increases with increasing of back-side voltage,and decreases with the increase of NO_2 concentration when the NO_2 concentration is below 20μg/g.The temperature dependence of ChemFET sensor array shows that the drain current of ChemFET sensor decreases with increasing of temperature.展开更多
基金This work is supported by the National Science Foundation of China (Grants No. 60372002, 60425101)
文摘Based on conventional metal-oxide-semiconductor field-effect transistor (MOSFET),a novel kind of chemical field-effect transistor (ChemFET) gas sensor array has been designed and fabricated.The obtained sensor consists of self-assembly polyaniline (PAN) composite film containing poly(acrylic acid) (PAA) which was used as gate material of MOSFET instead of conventional metallic gate.The UV-Vis absorption spectra of PAN/PAA films were characterized.The NO_2 gas sensitive property of the ChemFET sensor array was also investigated.Results show that the drain current of devices increases with increasing of back-side voltage,and decreases with the increase of NO_2 concentration when the NO_2 concentration is below 20μg/g.The temperature dependence of ChemFET sensor array shows that the drain current of ChemFET sensor decreases with increasing of temperature.