Non-interactive SM2 threshold signature scheme with identifiable abort

A threshold signature is a special digital signature in which the N-signer share the private key x and can construct a valid signature for any subset of the included t-signer,but less than t-signer cannot obtain any information.Considering the breakthrough achievements of threshold ECDSA signature and threshold Schnorr signature,the existing threshold SM2 signature is still limited to two parties or based on the honest majority setting,there is no more effective solution for the multiparty case.To make the SM2 signature have more flexible application scenarios,promote the application of the SM2 signature scheme in the blockchain system and secure cryptocurrency wallets.This paper designs a non-interactive threshold SM2signature schemebasedon partially homomorphic encryption and zero-knowledge proof.Only the last round requires the message input,so make our scheme non-interactive,and the pre-signing process takes 2 rounds of communication to complete after the key generation.We allow arbitrary threshold t<n and design a key update strategy.It can achieve security with identifiable abort under the malicious majority,which means that if the signature process fails,we can find the failed party.Performance analysis shows that the computation and communication costs of the pre-signing process grows linearly with the parties,and it is only 1/3 of the Canetti's threshold ECDSA(CCS'20).

Electrolyte Effect on Photoetching of Gallium Nitride

The limited material removal rate of conventional chemical mechanical polishing(CMP)significantly hinders the fabrica-tion efficiency and surface quality,thereby preventing the development of gallium nitride(GaN)-based devices.Moreover,the incorporation of photoelectrochemistry in CMP has garnered increasing attention because of its potential to enhance the quality and efficiency of the GaN process.However,a considerable gap still exists in the comprehensive understanding of the specific photoelectrochemical(PEC)behavior of GaN.Here,we report the influence of the electrolyte on the PEC etching of GaN.Various acids and bases were tested,with their pH being carefully adjusted.The concentrations of the cations and anions were also examined.The results showed that photocorrosion/photoetching was more pronounced in sulfuric acid,phosphoric acid,and nitric acid environments than in alkaline environments,but it was less pronounced in hydrochloric acid.Furthermore,the effects of pH and anion concentration on photoetching were investigated,and the results revealed that pho-toetching in acidic environments weakened with increasing pH levels and diminished with increasing sulfate concentration.The underlying reasons contributing to this observation were explored.These findings provide ideas for improving the pho-toetching efficiency of GaN,thereby enriching the photoelectrochemical mechanical polishing(PECMP)technology of GaN.