Purpose:Comparison of topical vs general aneasthesia for strabismus surgery. Methods: Preoperative patients (aged 6~12 years) were divided into two study groups: the topical aneasthesia group (n=22), and the general ...Purpose:Comparison of topical vs general aneasthesia for strabismus surgery. Methods: Preoperative patients (aged 6~12 years) were divided into two study groups: the topical aneasthesia group (n=22), and the general aneasthesia group (n=21). The study groups were compared on the following measures:.analgesic effect, surgical correction effect, eye-heart reflex, preoperative preparation time. and operation time, using t-tests or X2 tests where appropriate. Results:.Compared with the general aneasthesia group, the topical aneasthesia group gained better surgical correction results(P<0.05), had a lower rate of eye-heart reflex (P<0.05), and had a shorter preoperative preparation time (P<0.001). No significant difference was observed between the groups in terms of the analgesic effect or operation time (P>0.05). Conclusion:Topical aneasthesia represents a safe and effective alternative to general aneasthesia for strabismus surgery in children.展开更多
A visual and tactile multisensory integrated system is essential for human walking due to the demand for real-time interactions between perception and action.Here,a piezoresistor and MoS_(2)field effect transistor are...A visual and tactile multisensory integrated system is essential for human walking due to the demand for real-time interactions between perception and action.Here,a piezoresistor and MoS_(2)field effect transistor are combined to construct an artificial integration nervous system to simulate perception and synaptic plasticity.The key characteristics of synaptic plasticity are successfully demonstrated by individual pressure signals,individual optical signals,the synergy of optical and pressure signals,which are based on the electron trapping–detrapping mechanism at the MoS_(2)/SiO_(2)interface.We demonstrate that perception under synergy is stronger than perception under optical or pressure signal alone,which is similar to a biological system.Moreover,various distinguishable motion scenarios(combination of the following conditions:external lighting environment of day or night,flat or rough road,movement state of walking or running)are simulated and verified by adjusting the amplitude and frequency of the optical and pressure signals.展开更多
The properties of photodetectors based on two-dimensional materials can be significantly enhanced by avalanche effect.However,a high avalanche breakdown voltage is needed to reach impact ionization,which leads to high...The properties of photodetectors based on two-dimensional materials can be significantly enhanced by avalanche effect.However,a high avalanche breakdown voltage is needed to reach impact ionization,which leads to high power consumption.Here,we report the unique features of a low-voltage avalanche phototransistor formed by an in-plane WSe_(2)field effect transistor(FET)with an out-of-plane WSe_(2)/WS_(2)P–N heterojunction(HJ FET).The avalanche breakdown voltage in the device can be decreased from−31 to−8.5 V when compared with that in WSe_(2)FET.The inherent mechanism is mainly related to the redistributed electric field in the WSe_(2)channel after the formation of the out-of-plane P–N heterojunction.When the bias voltage is−16.5 V,the photoresponsivity in the HJ FET is enhanced from 1.5 to 135 A/W,which is significantly higher than that in the WSe_(2)FET because of the obvious reduction of the avalanche breakdown voltage.Moreover,HJ FET shows a higher responsivity than WSe_(2)FET in the range of 400–1,100 nm under low bias voltage.This phenomenon is caused by accelerating electron–hole spatial separation in the heterojunction.These results indicate that the use of an WSe_(2)FET with an out-of-plane WSe_(2)/WS_(2)heterojunction is ideal for high-performance photodetectors with low power consumption.展开更多
The contradiction between the high number of visually handicapped people and the scarcity of guide dogs has stimulated the demand for electronic guide dogs(EGDs).Here,we demonstrate an EGD by leveraging piezoresistors...The contradiction between the high number of visually handicapped people and the scarcity of guide dogs has stimulated the demand for electronic guide dogs(EGDs).Here,we demonstrate an EGD by leveraging piezoresistors on a MoS_(2)/Ge heterostructure for simultaneous pressure-sensing and optical-sensing functions.The device has excellent gating capability and exhibits large positive and negative photoresponses under visible(532 nm,182 A/W)and infrared(1550 nm,37 A/W)illumination.These characteristics allow the device to efficiently classify different obstacles at all times of day using pressure and light signals.The device reaches nearly 100%accuracy after 48 training sessions when used to classify frequent scenes.The device adopts passive and active detection modes during the day and night,respectively,which improves the battery life of the EGD.This work provides a significant reference for the future design of EGDs,which may help a greater number of visually impaired people by reducing the cost of such devices.展开更多
文摘Purpose:Comparison of topical vs general aneasthesia for strabismus surgery. Methods: Preoperative patients (aged 6~12 years) were divided into two study groups: the topical aneasthesia group (n=22), and the general aneasthesia group (n=21). The study groups were compared on the following measures:.analgesic effect, surgical correction effect, eye-heart reflex, preoperative preparation time. and operation time, using t-tests or X2 tests where appropriate. Results:.Compared with the general aneasthesia group, the topical aneasthesia group gained better surgical correction results(P<0.05), had a lower rate of eye-heart reflex (P<0.05), and had a shorter preoperative preparation time (P<0.001). No significant difference was observed between the groups in terms of the analgesic effect or operation time (P>0.05). Conclusion:Topical aneasthesia represents a safe and effective alternative to general aneasthesia for strabismus surgery in children.
基金the National Key Research and Development Program of China(No.2019YFB2204400)the Natural Science Basic Research Program of Shaanxi(No.2022JQ-650).
文摘A visual and tactile multisensory integrated system is essential for human walking due to the demand for real-time interactions between perception and action.Here,a piezoresistor and MoS_(2)field effect transistor are combined to construct an artificial integration nervous system to simulate perception and synaptic plasticity.The key characteristics of synaptic plasticity are successfully demonstrated by individual pressure signals,individual optical signals,the synergy of optical and pressure signals,which are based on the electron trapping–detrapping mechanism at the MoS_(2)/SiO_(2)interface.We demonstrate that perception under synergy is stronger than perception under optical or pressure signal alone,which is similar to a biological system.Moreover,various distinguishable motion scenarios(combination of the following conditions:external lighting environment of day or night,flat or rough road,movement state of walking or running)are simulated and verified by adjusting the amplitude and frequency of the optical and pressure signals.
基金supported by the National Key Research and Development Program of China(No.2019YFB2204400)Fundamental Research Funds for the Central Universities,the Innovation Fund of Xidian University,and the Natural Science Basic Research Program of Shaanxi(No.2022JQ-650).
文摘The properties of photodetectors based on two-dimensional materials can be significantly enhanced by avalanche effect.However,a high avalanche breakdown voltage is needed to reach impact ionization,which leads to high power consumption.Here,we report the unique features of a low-voltage avalanche phototransistor formed by an in-plane WSe_(2)field effect transistor(FET)with an out-of-plane WSe_(2)/WS_(2)P–N heterojunction(HJ FET).The avalanche breakdown voltage in the device can be decreased from−31 to−8.5 V when compared with that in WSe_(2)FET.The inherent mechanism is mainly related to the redistributed electric field in the WSe_(2)channel after the formation of the out-of-plane P–N heterojunction.When the bias voltage is−16.5 V,the photoresponsivity in the HJ FET is enhanced from 1.5 to 135 A/W,which is significantly higher than that in the WSe_(2)FET because of the obvious reduction of the avalanche breakdown voltage.Moreover,HJ FET shows a higher responsivity than WSe_(2)FET in the range of 400–1,100 nm under low bias voltage.This phenomenon is caused by accelerating electron–hole spatial separation in the heterojunction.These results indicate that the use of an WSe_(2)FET with an out-of-plane WSe_(2)/WS_(2)heterojunction is ideal for high-performance photodetectors with low power consumption.
基金supported by the National Natural Science Basic Research Program of Shaanxi(No.2022JQ-650)the Natural Science Foundation of China(NSFC)(No.62204188)the Cooperation Program of XDU-Chongqing IC Innovation Research Institute(No.CQIRI-CXYHT-2022-13)。
文摘The contradiction between the high number of visually handicapped people and the scarcity of guide dogs has stimulated the demand for electronic guide dogs(EGDs).Here,we demonstrate an EGD by leveraging piezoresistors on a MoS_(2)/Ge heterostructure for simultaneous pressure-sensing and optical-sensing functions.The device has excellent gating capability and exhibits large positive and negative photoresponses under visible(532 nm,182 A/W)and infrared(1550 nm,37 A/W)illumination.These characteristics allow the device to efficiently classify different obstacles at all times of day using pressure and light signals.The device reaches nearly 100%accuracy after 48 training sessions when used to classify frequent scenes.The device adopts passive and active detection modes during the day and night,respectively,which improves the battery life of the EGD.This work provides a significant reference for the future design of EGDs,which may help a greater number of visually impaired people by reducing the cost of such devices.