Graphene is a material with unique properties that can be exploited in electronics, catalysis, energy, and bio-related fields. Although, for maximal utilization of this material, high-quality graphene is required at b...Graphene is a material with unique properties that can be exploited in electronics, catalysis, energy, and bio-related fields. Although, for maximal utilization of this material, high-quality graphene is required at both the growth process and after transfer of the graphene film to the application-compatible substrate. Chemical vapor deposition (CVD) is an important method for growing high-quality graphene on non-technological substrates (as, metal substrates, e.g., copper foil). Thus, there are also considerable efforts toward the efficient and non-damaging transfer of quality of graphene on to technologically relevant materials and systems. In this review article, a range of graphene current transfer techniques are reviewed from the standpoint of their impact on contamination control and structural integrity preservation of the as-produced graphene. In addition, their scalability, cost- and time-effectiveness are discussed. We summarize with a perspective on the transfer challenges, alternative options and future developments toward graphene technology.展开更多
Graphene doping continues to gather momentum because it enables graphene properties to be tuned,thereby affording new properties to,improve the performance of,and expand the application potential of graphene.Graphene ...Graphene doping continues to gather momentum because it enables graphene properties to be tuned,thereby affording new properties to,improve the performance of,and expand the application potential of graphene.Graphene can be chemically doped using various methods such as surface functionalization,hybrid composites(e.g.,nanoparticle decoration),and substitution doping,wherein C atoms are replaced by foreign ones in the graphene lattice.Theoretical works have predicted that graphene could be substitutionally doped by aluminum(Al)atoms,which could hold promise for exciting applications,including hydrogen storage and evolution,and supercapacitors.Other theoretical predictions suggest that Al substitutionally doped graphene(AIG)could serve as a material for gas sensors and the catalytic decomposition of undesirable materials.However,fabricating Al substitutionally doped graphene has proven challenging until now.Herein,we demonstrate how controlled-flow chemical vapor deposition(CVD)implementing a simple solid precursor can yield high-quality and large-area monolayer AIG,and this synthesis is unequivocally confirmed using various characterization methods including local electron energy-loss spectroscopy(EELS).Detailed high-resolution transmission electron microscopy(HRTEM)shows numerous bonding configurations between the Al atoms and the graphene lattice,some of which are not theoretically predicted.Furthermore,the produced AIG shows a CO_(2) capturability superior to those of other substitutionally doped graphenes.展开更多
There is ongoing research in freestanding single-atom thick elemental metal patches,including those suspended in a two-dimensional(2D)material,due to their utility in providing new structural and energetic insight int...There is ongoing research in freestanding single-atom thick elemental metal patches,including those suspended in a two-dimensional(2D)material,due to their utility in providing new structural and energetic insight into novel metallic 2D systems.Graphene pores have shown promise as support systems for suspending such patches.This study explores the potential of Sn atoms to form freestanding stanene and/or Sn patches in graphene pores.Sn atoms were deposited on graphene,where they formed novel single-atom thick 2D planar clusters/patches(or membranes)ranging from 1 to 8 atoms within the graphene pores.Patches of three or more atoms adopted either a star-like or close-packed structural configuration.Density functional theory(DFT)calculations were conducted to look at the cluster configurations and energetics(without the graphene matrix)and were found to deviate from experimental observations for 2D patches larger than five atoms.This was attributed to interfacial interactions between the graphene pore edges and Sn atoms.The presented findings help advance the development of single-atom thick 2D elemental metal membranes.展开更多
基金This work was supported by the National Natural Science Foundation of China(No.52071225)the Czech Republic from ERDF“Institute of Environmental Technology-Excellent Research”(No.CZ.02.1.01/0.0/0.0/16_019/0000853)M.H.R.and L.F.thank the Sino-German Research Institute for support(project:GZ 1400).X.Q.Y.thanks Suzhou University.H.Q.T.thanks the Alexander Von Humboldt Foundation for support through a fellowship.
文摘Graphene is a material with unique properties that can be exploited in electronics, catalysis, energy, and bio-related fields. Although, for maximal utilization of this material, high-quality graphene is required at both the growth process and after transfer of the graphene film to the application-compatible substrate. Chemical vapor deposition (CVD) is an important method for growing high-quality graphene on non-technological substrates (as, metal substrates, e.g., copper foil). Thus, there are also considerable efforts toward the efficient and non-damaging transfer of quality of graphene on to technologically relevant materials and systems. In this review article, a range of graphene current transfer techniques are reviewed from the standpoint of their impact on contamination control and structural integrity preservation of the as-produced graphene. In addition, their scalability, cost- and time-effectiveness are discussed. We summarize with a perspective on the transfer challenges, alternative options and future developments toward graphene technology.
基金supported by the National Natural Science Foundation of China(NSFC,No.52071225)the National Science Center,and the Czech Republic under the ERDF program“Institute of Environmental Technology-Excellent Research”(No.CZ.02.1.01/0.0/0.0/16-019/0000853)M.H.R.and L.F.thank the Sino-German Research Institute for support(No.GZ 1400).
文摘Graphene doping continues to gather momentum because it enables graphene properties to be tuned,thereby affording new properties to,improve the performance of,and expand the application potential of graphene.Graphene can be chemically doped using various methods such as surface functionalization,hybrid composites(e.g.,nanoparticle decoration),and substitution doping,wherein C atoms are replaced by foreign ones in the graphene lattice.Theoretical works have predicted that graphene could be substitutionally doped by aluminum(Al)atoms,which could hold promise for exciting applications,including hydrogen storage and evolution,and supercapacitors.Other theoretical predictions suggest that Al substitutionally doped graphene(AIG)could serve as a material for gas sensors and the catalytic decomposition of undesirable materials.However,fabricating Al substitutionally doped graphene has proven challenging until now.Herein,we demonstrate how controlled-flow chemical vapor deposition(CVD)implementing a simple solid precursor can yield high-quality and large-area monolayer AIG,and this synthesis is unequivocally confirmed using various characterization methods including local electron energy-loss spectroscopy(EELS).Detailed high-resolution transmission electron microscopy(HRTEM)shows numerous bonding configurations between the Al atoms and the graphene lattice,some of which are not theoretically predicted.Furthermore,the produced AIG shows a CO_(2) capturability superior to those of other substitutionally doped graphenes.
基金This work was supported by the National Natural Science Foundation of China(Nos.11874044,51676154,and 51672181)the Czech Republic from ERDF“Institute of Environmental Technology-Excellent Research”(No.CZ.02.1.01/0.0/0.0/16_019/0000853)M.H.R.thanks the Sino-German Research Institute for its support(project:GZ 1400).
文摘There is ongoing research in freestanding single-atom thick elemental metal patches,including those suspended in a two-dimensional(2D)material,due to their utility in providing new structural and energetic insight into novel metallic 2D systems.Graphene pores have shown promise as support systems for suspending such patches.This study explores the potential of Sn atoms to form freestanding stanene and/or Sn patches in graphene pores.Sn atoms were deposited on graphene,where they formed novel single-atom thick 2D planar clusters/patches(or membranes)ranging from 1 to 8 atoms within the graphene pores.Patches of three or more atoms adopted either a star-like or close-packed structural configuration.Density functional theory(DFT)calculations were conducted to look at the cluster configurations and energetics(without the graphene matrix)and were found to deviate from experimental observations for 2D patches larger than five atoms.This was attributed to interfacial interactions between the graphene pore edges and Sn atoms.The presented findings help advance the development of single-atom thick 2D elemental metal membranes.
