Perfect spin filtering controlled by an electric field in a bilayer graphene junction:Effect of layer-dependent exchange energy

Magneto transport of carriers with a spin-dependent gap in a ferromagnetic-gated bilayer of graphene is investigated.We focus on the effect of an energy gap induced by the mismatch of the exchange fields in the top and bottom layers of an AB-stacked graphene bilayer. The interplay of the electric and exchange fields causes the electron to acquire a spindependent energy gap. We find that, only in the case of the anti-parallel configuration, the effect of a magnetic-induced gap will give rise to perfect spin filtering controlled by the electric field. The resolution of the spin filter may be enhanced by varying the bias voltage. Perfect switching of the spin polarization from ＋100% to -100% by reversing the direction of electric field is predicted. Giant magnetoresistance is predicted to be easily realized when the applied electric field is smaller than the magnetic energy gap. It should be pointed out that the perfect spin filter is due to the layer-dependent exchange energy. This work points to the potential application of bilayer graphene in spintronics.

Josephson Effect in Graphene： Comparison of Real and Pseudo Vector Potential Barriers

The Josephson currents through real vector potential （RVP） and pseudo vector potential （PVP） barriers in graphene are investigated. In graphene, the pseudo vector potential may be caused by a local strain. The comparison of supercurrents induced by the two type-barriers is focused. As a result, we find that not only will the RVP induce a transition Josephson current from the 0→π state but also causes the difference in the phases of the order parameters of the two superconducting graphene layers to shift from φ→2φ. The critical current is PVP-independent around the neutrality point while it strongly depends on the RVP. The vector potential dependence of critical current is found to be perfectly linear for both PVP and RVP barriers.