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Atomistic Simulation of Undissociated 60&deg;Basal Dislocation in Wurtzite GaN.
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作者 i.belabbas J.Chen +1 位作者 Ph.Komninou G.Nouet 《Modeling and Numerical Simulation of Material Science》 2013年第4期11-16,共6页
We have carried out computer atomistic simulations, based on an efficient density functional based tight binding method, to investigate the core configurations of the 60°basal dislocation in GaN wurtzite. Our ene... We have carried out computer atomistic simulations, based on an efficient density functional based tight binding method, to investigate the core configurations of the 60°basal dislocation in GaN wurtzite. Our energetic calculations, on the undissociated dislocation, demonstrate that the glide configuration with N polarity is the most energetically favorable over both the glide and the shuffle sets. 展开更多
关键词 Gallium Nitride 60°Basal Dislocation Core Structure Energy TIGHT-BINDING SCC-DFTB
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