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Field-effect passivation on silicon nanowire solar cells 被引量:5
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作者 Anna Dalmau Mallorqui Esther Alarcon-Llado +6 位作者 ignasi canales mundet Amirreza Kiani Benedicte Demaurex Stefaan De Wolf Andreas Menzel Margrit Zacharias Anna Fontcuberta i Morra 《Nano Research》 SCIE EI CAS CSCD 2015年第2期673-681,共9页
Surface recombination represents a handicap for high-efficiency solar cells. This is especially important for nanowire array solar cells, where the surface-to-volume ratio is greatly enhanced. Here, the effect of diff... Surface recombination represents a handicap for high-efficiency solar cells. This is especially important for nanowire array solar cells, where the surface-to-volume ratio is greatly enhanced. Here, the effect of different passivation materials on the effective recombination and on the device performance is experimentally analyzed. Our solar cells are large area top-down axial n-p junction silicon nanowires fabricated by means of Near-Field Phase-Shift Lithography (NF-PSL). We report an efficiency of 9.9% for the best cell, passivated with a SiO2/SiNx stack. The impact of the presence of a surface fixed charge density at the silicon/oxide interface is studied. 展开更多
关键词 FIELD-EFFECT PASSIVATION NANOWIRE surface recombination solar cell
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