Cubic boron nitride (cBN) as the outstanding representative of the family of semiconducting wide bandgap nitrides and the closest analogue of diamond, is produced and investigated. XRD as method for doping control of ...Cubic boron nitride (cBN) as the outstanding representative of the family of semiconducting wide bandgap nitrides and the closest analogue of diamond, is produced and investigated. XRD as method for doping control of cBN with impurities of large atomic sizes, is suggested. The larger an atomic size mismatch between doping and intrinsic atoms of a semiconductor’s crystal lattice, the stronger its response through own strains and distortions. The distortions are expected to be notable in the case of the smallest intrinsic atoms of cBN and diamond. The light-emitting cBN doped with various rare-earth elements (RE) in different concentrations under high pressure conditions is synthesized in form of the cBN: RE single phase micropowders. The micro-powders showed the discrete photoluminescence spectra in IR-, red and green spectral ranges which were attributed to the intra-electronic transitions of RE3+ ions located in cBN crystal lattice. The locations of the RE3+ ions in cBN crystal lattice are discussed. The data of XRD (CuKα) analysis of the cBN:RE micropowders are repre- sented. Extra-splits (as the additional ones to the α1-α2-splits on CuKα) of the cBN parent peaks in XRD patterns of the cBN: RE, are discovered and analyzed using appropriate computer programs. As established, crystal lattice of cBN due to the incorporation of RE3+ ions, represents a disordered solid solutions which are nonuniformly distorted in dependence on the ions’ size and their concentrations in cBN. Results of the present work can be useful to manufacture cBN with predictable functional properties, as well as for in situ doping control of cBN and diamond.展开更多
文摘Cubic boron nitride (cBN) as the outstanding representative of the family of semiconducting wide bandgap nitrides and the closest analogue of diamond, is produced and investigated. XRD as method for doping control of cBN with impurities of large atomic sizes, is suggested. The larger an atomic size mismatch between doping and intrinsic atoms of a semiconductor’s crystal lattice, the stronger its response through own strains and distortions. The distortions are expected to be notable in the case of the smallest intrinsic atoms of cBN and diamond. The light-emitting cBN doped with various rare-earth elements (RE) in different concentrations under high pressure conditions is synthesized in form of the cBN: RE single phase micropowders. The micro-powders showed the discrete photoluminescence spectra in IR-, red and green spectral ranges which were attributed to the intra-electronic transitions of RE3+ ions located in cBN crystal lattice. The locations of the RE3+ ions in cBN crystal lattice are discussed. The data of XRD (CuKα) analysis of the cBN:RE micropowders are repre- sented. Extra-splits (as the additional ones to the α1-α2-splits on CuKα) of the cBN parent peaks in XRD patterns of the cBN: RE, are discovered and analyzed using appropriate computer programs. As established, crystal lattice of cBN due to the incorporation of RE3+ ions, represents a disordered solid solutions which are nonuniformly distorted in dependence on the ions’ size and their concentrations in cBN. Results of the present work can be useful to manufacture cBN with predictable functional properties, as well as for in situ doping control of cBN and diamond.
